Patents Examined by Ida M Howard
  • Magnetic memory device and method for manufacturing the same
    Patent number: 9761793
    Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: September 12, 2017
    Assignees: Samsung Electronics Co., Ltd., International Business Machines Corporation
    Inventors: Woojin Kim, Keewon Kim, Jaewoo Jeong, Stuart S. P. Parkin, Mahesh Govind Samant