Patents Examined by Igwe U. Ahya
  • Patent number: 6955997
    Abstract: A method of manufacturing a semiconductor device, including depositing a first layer of dielectric material onto the device, laser thermal annealing a surface of the first layer, and depositing a second layer of dielectric material over the laser thermal annealed surface of the first layer. The two layers are preferably low dielectric constant (“low-k”) material that form an inter-layer dielectric (“ILD”) layer of a semiconductor device. According to one aspect of the invention, a third layer of low-k material is deposited over the second layer and a surface of the third layer is also laser thermal annealed.
    Type: Grant
    Filed: May 16, 2003
    Date of Patent: October 18, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Arvind Halliyal, Minh Van Ngo