Patents Examined by Igwe U. Amya
  • Method of forming tungsten silicide film
    Patent number: 6245673
    Abstract: A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.
    Type: Grant
    Filed: August 30, 1999
    Date of Patent: June 12, 2001
    Assignee: Tokyo Electron Limited
    Inventors: Kazuya Okubo, Tsuyoshi Takahashi, Kimiya Aoki, Kimihiro Matsuse