Abstract: A substrate heating equipment for use in a semiconductor fabricating apparatus includes a heater support frame disposed within a vacuum vessel, opposed panel heaters disposed in a pluri-shelved fashion within the heater support frame, and support means for supporting a substrate to be treated between an adjacent pair of the opposed panel heaters, whereby simultaneous heating of plural substrates to be treated is enabled. By controlling the individual temperature of the panel heaters, it also becomes possible to significantly reduce a tact time and to effect uniform heating of the substrates while the equipment is rendered compact.