Patents Examined by J. D. Mitchell
  • Patent number: 7265032
    Abstract: A method including forming a chemically soluble coating on a plurality exposed contacts on a surface of a circuit substrate; scribing the surface of the substrate along scribe areas; and after scribing, removing a portion of the coating. A method including forming a circuit structure comprises a plurality of exposed contacts on a surface, a location of the exposed contacts defined by a plurality of scribe streets; forming a coating comprising a chemically soluble material on the exposed contacts; scribing the surface of the substrate along the scribe streets; and after scribing, removing the coating. A method including coating a surface of a circuit substrate comprising a plurality of exposed contacts with a chemically soluble material; scribing the surface of the substrate along scribe areas; removing the coating; and sawing the substrate in the scribe areas.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: September 4, 2007
    Assignee: Intel Corporation
    Inventors: Sujit Sharan, Thomas J. Debonis
  • Patent number: 7262074
    Abstract: An apparatus and method may be used for packaging a semiconductor die and a carrier substrate to substantially prevent trapped moisture therebetween and provide a robust, inflexible cost-effective bond. The semiconductor die is attached to the carrier substrate with a plurality of discrete adhesive elements so as to provide a gap or standoff therebetween. Wire bonds may then be formed between bond pads on the semiconductor die to conductive pads or terminals on the carrier substrate. With this arrangement, a dielectric filler material is disposed in the gap or standoff to form a permanent bonding agent between the semiconductor die and the carrier substrate. By applying the dielectric filler material after forming the wire bonds, the dielectric filler material coats at least a portion of the wire bonds to stabilize the wire bonds and prevent wire sweep in an encapsulation process, such as transfer molding, performed thereafter.
    Type: Grant
    Filed: July 8, 2002
    Date of Patent: August 28, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Frank L. Hall, Cary J. Baerlocher
  • Patent number: 7256126
    Abstract: Methods and apparatus for providing a memory array fabrication process that concurrently forms memory array elements and peripheral circuitry. The invention relates to a method for fabricating memory arrays using a process that concurrently forms memory array elements and peripheral circuitry and results in a reduction in pitch.
    Type: Grant
    Filed: December 10, 2004
    Date of Patent: August 14, 2007
    Assignee: Macronix International Co., Ltd.
    Inventor: Chien-Wei Chen
  • Patent number: 7253510
    Abstract: The present invention provides for a BGA solder ball interconnection to an outer conductive layer of a laminated circuit assembly having an underlying circuit layer. The invention includes a raised BGA solder ball pad substantially co-planar with the outer conductive layer, the raised pad having a raised face and a plurality of vertical conductive walls and a BGA solder ball having an average diameter of greater than the width of the raised face, the BGA solder ball being adhered to the raised face and to a substantial portion of the vertical conductive walls.
    Type: Grant
    Filed: January 16, 2003
    Date of Patent: August 7, 2007
    Assignee: International Business Machines Corporation
    Inventor: Paul Marlan Harvey
  • Patent number: 7247534
    Abstract: A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: July 24, 2007
    Assignee: International Business Machines Corporation
    Inventors: Dureseti Chidambarrao, Omer H. Dokumaci, Oleg G. Gluschenkov