Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile includes multiple doped regions with peak doping levels where a first doped region adjacent to a first side of the field stop zone has a first peak doping level that is not higher than a last peak doping level of a last doped region adjacent to the base region. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.

Abstract: A method of forming an image sensor includes forming a first image sensor element within a substrate. The first image sensor element and the substrate respectively comprise a first material. A second image sensor element is formed within the substrate. Forming the second image sensor element includes forming an isolation layer over the first image sensor element. Further, a buffer layer is formed over the isolation layer and an active layer is formed over the buffer layer. The active layer comprises a second material different from the first material.

Abstract: A phase-transition optical isomer compound is described, a transparent EL display device including the phase-transition optical isomer compound and a method of fabricating the EL display device, where a phase of the phase-transition optical isomer compound is transited by light irradiation and a second electrode of the EL display device is selectively deposited without a masking process.

Abstract: Uniform layouts for SRAM and register file bit cells are described. In an example, an integrated circuit structure includes a six transistor (6T) static random access memory (SRAM) bit cell on a substrate. The 6T SRAM bit cell includes first and second active regions parallel along a first direction of the substrate. First, second, third and fourth gate lines are over the first and second active regions, the first, second, third and fourth gate lines parallel along a second direction of the substrate, the second direction perpendicular to the first direction.

Abstract: Provided is a nozzle assembly including a valve assembly configured to be coupled to a tank, the valve assembly including a valve body having a first end, a second end, and a first passage extending therebetween, and a valve disposed in the first passage, and a regulator assembly configured to be coupled to the valve assembly, the regulator assembly including a regulator body having a first end, a second end, and a second passage extending therebetween, a nozzle coupled to the regulator body and having an outlet in communication with the second passage, a spindle having a first end disposed in the second passage and a second end surrounded by the nozzle, and a piston assembly disposed in the second passage.

Abstract: A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.

Abstract: The present disclosure relates to a hydrostatically adjustable flow control valve. In one embodiment, the valve includes a fixed sleeve that slidably receives a spool. A spring biases the spool relative to the fixed sleeve. A primary orifice is used to deliver fluid to the interior area of the fixed sleeve and spool. A control device is used to selectively vary the rate at which fluid drains from the interior area. Draining the fluid results in the spool being received within the interior of the fixed sleeve. The movement of the spool opens flow ports within the sleeve. This, in turn, allows fluid to exit the valve. Conversely, the control device can be set to prevent fluid drainage. This results in the spool extending from interior of the fixed sleeve, the closure of the flow ports, and the sealing of the valve.

Abstract: An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.

Abstract: A method, system, and apparatus for flame arresting are provided. In an embodiment, a flame arrestor includes a quenching element disposed within a conduit. The flame arrestor also includes a cooling system in thermal contact with the quenching system. The cooling system cools the quenching element during operation of the cooling system.

Abstract: A method includes providing dummy gate structures disposed over a device region and over an isolation region adjacent the active region, first gate spacers disposed along sidewalls of the dummy gate structures in the active region, and second gate spacers disposed along sidewalls of the dummy gate structures in the isolation region, removing top portions of the second, but not the first gate spacers, forming a first dielectric layer over the first gate spacers and remaining portions of the second gate spacers, replacing the dummy gate structures with metal gate structures after the forming of the first dielectric layer, removing the first gate spacers after the replacing of the dummy gate structures, and forming a second dielectric layer over top surfaces of the metal gate structures and of the first dielectric layer.

Abstract: A pressure relief valve configured to vent a pressurized tank in the event of a fire is provided. The pressure relief valve includes a body, a vent passage, a plug and a latch. The vent passage is disposed through the body. The vent passage can be placed in fluid communication with an internal volume of a tank and with the atmosphere. The plug is moveably mounted in the vent passage. The latch has a blocking member disposed in contact with a control end of the plug in a first configuration and out of contact with the control end in a second configuration. The second configuration allows movement of the plug in the vent passage. One or both of a shape memory alloy wire and a trigger piston is configured to actuate the latch from the first to the second configuration. The shape memory alloy wire is configured to shorten when exposed to a temperature above a threshold temperature. The trigger piston moves, e.g.

Abstract: A high altitude atmospheric energy storing apparatus having a new structure, which is conceived to store the energy of low-temperature air located at high altitude in the sky and utilize it as needed, is provided. The high altitude atmospheric energy storing apparatus includes an air tank adapted to store air, an air supply pipe provided such that it extends in a vertical direction and its lower end is connected to the air tank, and a compression device provided in the sky, connected to the upper end of the air supply pipe, and configured to compress air using the wind and supply the compressed air to the air tank through the air supply pipe, thereby enabling air to be compressed by the wind blowing at high altitude and to be then stored in the air tank.

Abstract: An integrated circuit structure includes a substrate, a metal ring penetrating through the substrate, a dielectric region encircled by the metal ring, and a through-via penetrating through the dielectric region. The dielectric region is in contact with the through-via and the metal ring.

Abstract: A method and apparatus are provided for controlling a fuel delivery system to limit acidic corrosion. An exemplary control system includes a controller, at least one monitor, an output, and a remediation system. The monitor of the control system may collect and analyze data indicative of a corrosive environment in the fuel delivery system. The output of the control system may automatically warn an operator of the fueling station of the corrosive environment so that the operator can take preventative or corrective action. The remediation system of the control system may take at least one corrective action to remediate the corrosive environment in the fuel delivery system. One or more sensors may be employed to signal proper operation of the remediation system.

Abstract: A meter bar includes a housing comprising an inflow end and an outflow end, a key assembly arranged within housing, the key assembly including a key, the key defining an interior and providing a fluid pathway from the inflow end to the outflow end; the key defining a pair of upper portals, one upper portal proximate the inflow end and one upper portal proximate the outflow end; the key defining a pair of lower portals, one lower portal proximate the inflow end and one lower portal proximate the outflow end; the key defining a pair of bypass portals; the key assembly arrangeable within the housing to selectably direct fluid flow from the inflow end to the outflow end either through a meter or bypassing the meter.

Abstract: The present invention concerns a system for the transfer of cryogenic product from a first floating structure (800) for storage and transport of cryogenic product to a second fixed or floating structure (900) for storing cryogenic product, by means of a transfer pipe able to transport the cryogenic product. The system comprises a transfer pipe, itself comprising at least three rigid sections of pipe (12-17) fluidically connected each to the next by connection means (21 to 27) able to transport the cryogenic product, each of the two end sections of pipe (12, 17) having a free end configured as a tip for connection to a connection device of the first floating structure (800) and respectively of the second floating structure (900). The present invention also concerns a method of fluidically connecting a device for the transport of cryogenic product.

Abstract: Provided are opto-electronic devices with low dark noise and high signal-to-noise ratio and methods of manufacturing the same. An opto-electronic device may include: a semiconductor substrate; a light receiving unit formed in the semiconductor substrate; and a driving circuit arranged on a surface of the semiconductor substrate. The light receiving unit may include: a first semiconductor layer partially arranged in an upper region of the semiconductor substrate and doped with a first conductivity type impurity; a second semiconductor layer arranged on the first semiconductor layer and doped with a second conductivity type impurity; a transparent matrix layer arranged on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to contact the transparent matrix layer; and a first electrode and a second electrode electrically connected to the second semiconductor layer and respectively arranged on both sides of the transparent matrix layer.

Abstract: A fuel storage and supply arrangement serves as a source of fuel to be dispensed via at least one fuel dispenser in a fuel dispensing environment. The arrangement comprises a storage tank for containing a quantity of the fuel. A pump assembly draws the fuel from the storage tank providing the fuel under pressure to a fuel supply line. A fuel conditioning assembly includes a housing having a storage volume, a housing inlet receiving the fuel under pressure created by the pump assembly, a housing outlet through which fuel exits the housing, and a housing port through which fuel can be drawn into the housing. A vacuum source in fluid communication with the housing outlet is operative to selectively apply a vacuum to the outlet of the housing so that liquid can be drawn into the housing via the port. A water intake device is in fluid communication with the housing port. The water intake device has at least one inlet situated adjacent to a bottom of the fuel storage tank.

Abstract: Self-organizing patterns with micrometer-scale feature sizes are promising for the large area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. The present disclosure includes approaches to form period patterns in single layers of organic semiconductors by an annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features form initially in the amorphous region within a micron of the crystal growth front, likely due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned by varying film thickness and annealing temperature, millimeter scale domain sizes are obtained. Aspects of the disclosure can be exploited for self-assembly of microstructured organic optoelectronic devices, for example.

Abstract: A gas dosing apparatus is provided that includes an inlet configured to receive gas, and a directional control valve connected to the inlet and having a first position and a second position. The gas dosing apparatus also includes a fixed volume reservoir connected to the directional control valve and receiving gas from the inlet, via the directional control valve, while the directional control valve is in the first position. The gas dosing apparatus further includes an outlet connected to the directional control valve and outputting a gas dose received from the fixed volume reservoir, via the directional control valve, while the directional control valve is in the second position.