Abstract: According to the embodiments, a distribution of a recess portion shape is calculated based on a result obtained by measuring the recess portion shape of a first projection and recess pattern formed on a surface of a template. Next, a distribution of an application amount of a curing agent to a processing target layer is calculated based on the distribution of the recess portion shape, and the curing agent is applied to the processing target layer based on this distribution of the application amount of the curing agent. Next, a second projection and recess pattern is formed by transferring the first projection and recess pattern onto the curing agent by causing the curing agent to cure in a state where the first projection and recess pattern is in contact with the curing agent.

Abstract: An embodiment of a solid optical sky-sun diffuser, which comprises a transparent solid matrix embedding a dispersion of transparent nanoparticles having an average size d in the range 10 nm?d?240 nm; wherein: the ratio between the blue and red scattering optical densities ??Log [T(450 nm)]/Log [T(630 nm)] of said diffuser falls in the range 5???2.5, where T(?) is the Monochromatic Normalized Collinear Transmittance; in at least one propagation direction, said Monochromatic Normalized Collinear Transmittance is T(450 nm)?0.4; in at least one propagation direction said Monochromatic Normalized Collinear Transmittance is T(450 nm)?0.9, said propagation direction being the same or different from that at which said Monochromatic Normalized Collinear Transmittance is T(450 nm)?0.4.

Abstract: An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1?xN (0<x<1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5×1016 to 2×1018/cm3.

Abstract: A remote control operation of an illuminated unit attached to a headset consisting of a headband and at least one optical device providing illumination at a known distance from the optical device attached to the headband is disclosed. The remote control unit incorporates a sensing unit that causes power to be switched on and off by the detection of motion in front of the sensing unit. In addition, the illumination may be increased or decreased based on a signal strength of a detected remote sensing signal.

Abstract: A plurality of pixels PX include effective pixels and optical black pixels. Signal lines VL are provided corresponding to each column of the pixels PX and supplied with output signals of the pixels PX of the corresponding column. Clip transistors CL are provided corresponding to the respective signal lines VL and limit a potential of the corresponding vertical signal lines VL based on a gate potential. At least in a predetermined operating mode, a potential Vclip_dark is supplied to a gate of one of the clip transistors CL corresponding to at least one pixel column formed of the optical black pixels when reading a noise level from the pixels PX corresponding to the clip transistors CL and when reading a data level from the pixels PX corresponding to the clip transistors CL.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1; a second n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1?xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1?x?yN barrier layers where 0?x?1 and 0?y?1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers.

Abstract: An optical module has at least two optical elements mounted in parallel with each other. The module also has a first electrode pad which is formed between the paralleled optical elements and grounded to a ground potential and a second electrode pad which is arranged along a line that is intersected with a direction in which the optical elements are arranged, which faces the first electrode pad and is grounded to the ground potential. The module further has a conductive shield member which is connected to the first electrode pad and the second electrode pad and placed between electrical signal transmission paths each connected to the optical elements.

Abstract: A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity.

Abstract: Laser lit flat panel displays are disclosed including edge-lit and direct lit backlights. In certain embodiments, laser assemblies are selected to obtain bandwidth distributions to reduce speckle.

Abstract: Disclosed is an optical modulator module including an optical modulator configured to have a signal electrode and a ground electrode; a conductive package configured to accommodate the optical modulator and have electrical continuity with the ground electrode of the optical modulator; a substrate configured to have a ground electrode on a first surface thereof electrically connected to the package by solder or a conductive adhesive and have a signal electrode on another surface thereof; and a lead pin configured to electrically connect the signal electrode of the optical modulator to the signal electrode of the substrate.

Abstract: The present invention relates to an apparatus comprising a diode laser (10) providing radiation in a first wavelength interval, a radiation conversion unit (12) having an input and an output, the radiation converter configured to receive the radiation in the first wavelength interval from the diode laser at the input, the radiation conversion unit configured to convert the radiation in the first wavelength interval to radiation in a second wavelength interval and the output configured to output the converted radiation, the second wavelength interval having one endpoint outside the first wavelength interval.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Abstract: A method for treating progression of a refractive disorder in a human eye. The method includes the steps of producing a first image on a retina of the human eye and producing a second image to generate a defocus.

Abstract: A visible light communication (VLC) device is provided for use in a VLC system. The VLC device detect a trigger condition indicating a failure of a VLC link associated with first allocated resources used to communicate with a second VLC device. In response to the detection, the VLC device terminates on the first allocated resources transmission of data to the second VLC device and transmits a fast link recovery (FLR) signal using the first allocated resources. The VLC device receives a fast link recovery response (FLR RSP) signal indicating the second VLC device received the FLR signal and, in response, the VLC device resumes transmission of data to the second VLC device.

Abstract: A lithographic apparatus including a fluid handling structure configured to contain immersion fluid in a space adjacent to an upper surface of the substrate table and/or a substrate located in a recess of the substrate table, a cover having a planar main body that, in use, extends around a substrate from the upper surface to a peripheral section of an upper major face of the substrate in order to cover a gap between an edge of the recess and an edge of the substrate, and an immersion fluid film disruptor, configured to disrupt the formation of a film of immersion fluid between an edge of the cover and immersion fluid contained by the fluid handling structure during movement of the substrate table relative to the fluid handling structure.

Abstract: Certain embodiments provide an imprint recipe creating device comprising first to fifth creation units. The first creation unit creates inside-standard-shot information by use of filling amount information and residual film thickness information. The second creation unit creates first inside-substrate-surface information by use of shot position information, edge information, and the inside-standard-shot information. The third creation unit creates first correction information by use of unevenness information indicating unevenness in a substrate and unevenness distribution information indicating variations in depth of the unevenness inside the substrate surface. The fourth creation unit creates second correction information by use of post-process information indicating the variations in processing size. The fifth creation unit synthesizes the first inside-substrate-surface information, the first correction information and the second correction information, to create second inside-substrate-surface information.

Abstract: Provided is a lighting apparatus that is suitable as a substitute for a conventional halogen lamp when positively utilizing leaked light. The lighting apparatus comprises: a heat dissipator 12 that is in one of a bottomed cylindrical shape and a bowl shape, and that has a bottom portion, a circumferential wall portion, and an opening; and a light-emitting device 18b that is provided inside the heat dissipator 12 at the bottom portion and is operable to emit light, wherein the heat dissipator 12 has one or more windows 19 for leaking the emitted light outside the heat dissipator 12.

Abstract: An embodiment of a solid optical sky-sun diffuser, which comprises a transparent solid matrix embedding a dispersion of transparent nanoparticles having an average size d in the range 10 nm?d?240 nm; wherein: the ratio between the blue and red scattering optical densities ??Log [T(450 nm)]/Log [T(630 nm)] of said diffuser falls in the range 5???2.5, where T(?) is the Monochromatic Normalized Collinear Transmittance; in at least one propagation direction, said Monochromatic Normalized Collinear Transmittance is T(450 nm)?0.4; in at least one propagation direction said Monochromatic Normalized Collinear Transmittance is T(450 nm)?0.9, said propagation direction being the same or different from that at which said Monochromatic Normalized Collinear Transmittance is T(450 mm)?0.4.

Abstract: An illumination system generating light having at least one wavelength within 200 nm a plurality of nano-sized structures (e.g., voids). The optical fiber coupled to the light source. The light diffusing optical fiber has a core and a cladding. The plurality of nano-sized structures is situated either within said core or at a core-cladding boundary. The optical fiber also includes an outer surface. The optical fiber is configured to scatter guided light via the nano-sized structures away from the core and through the outer surface, to form a light-source fiber portion having a length that emits substantially uniform radiation over its length, said fiber having a scattering-in- duced attenuation greater than 50 dB/km for the wavelength(s) within 200 nm to 2000 nm range.