Abstract: A self-aligned, under-gated TFT device (10). A base layer (14) is formed. A conductive layer (16) is formed overlying the base layer (14). A dielectric layer (18) is formed overlying the conductive layer (16). A sacrificial layer (20) is formed overlying the dielectric layer (18). The layers (16, 18, and 20) are etched to form a "pillar" region. A dielectric layer (22) and a planar layer (24), which both overlie the "pillar" region, are etched back to form a substantially planar surface and expose a top portion of the sacrificial layer (20). The sacrificial layer (20) is removed and a conductive layer (28) is formed overlying conductive region (16) and planar layer (22). Conductive layer (28) is used to form a self-aligned TFT device (10) via the formation of a source region (33) and a drain region (34) adjacent an aligned plug region (32).

Abstract: To further reduce the manufacturing costs of semiconductor devices, such as TO-92 transistors or thyristors, a prefabricated plastic can or housing is filled with cast resin, and the chip, together with its leads and a synthetic-resin cover, is inserted into the cast resin and the can, with portions of the leads engaging a groove in the can. The apparatus for inserting the chips, etc., into the cans includes a feed rail for the cans, a centering slide, and a swivelling gripper onto which the cans are pushed by the centering slide. When rotated, the swivelling gripper slips the cans over the chips mounted on a lead frame moving above the swivelling gripper.

Abstract: In an image sensor, photoelectric transducers each consisting of a pair of a photodiode and a blocking diode, each of which has a semiconductor layer of an amorphous silicon thin film and two opposing electrodes sandwiching the semiconductor layer therebetween, are aligned in an array on a single substrate and are driven by matrix-wirings. One of the two electrodes serves as a light-receiving side electrode and the other electrode serves as an ohmic contact electrode. One of the light-receiving side electrode and the ohmic contact electrode is formed common to the pair of the photodiode and the blocking diode. Each of the photodiode and the blocking diode is formed by a Schottky junction between the semiconductor layer and the light-receiving side electrode.

Abstract: An improved interconnect tape for use in tape automated bonding comprising a carrier member for supporting at least one pattern of interconnect leads. At least one first ring is provided having a plurality of sides with each of the sides supporting the leads extending inwardly of the member. Yieldable portions connecting the ring to the carrier member provide reduced stresses in the leads and reduced thermal dissipation during inner lead bonding.