Abstract: A method for fabricating assembled structures. The method includes providing a tip structure, which has a first end, a second end, and a length defined between the first end and the second end. The second end is a free end. The method includes attaching a nano-sized structure along a portion of the length of the tip structure to extend a total length of the tip structure to include the length of the tip structure and a first length associated with the nano-sized structure. The method includes shortening the nano-sized structure from the first length to a second length. The method also includes pushing the nano-sized structure in a direction parallel to the second length to reduce the second length to a third length of the nano-sized structure along the direction parallel to the second length to cause the nano-sized structure to move along a portion of the length of the tip structure.

Abstract: Provided is an electron beam system, in which an electron beam emitted from an electron gun is irradiated to a stencil mask, and the electron beam that has passed through the stencil mask is magnified by an electron lens and then detected by a detector having a plurality of pixels so as to form an image of the sample. Further provided is an electron beam system, in which a primary electron beam emitted from an electron gun is directed to a sample surface of a sample prepared as a subject to be inspected, and an electron image formed by a secondary electron beam emanated from the sample is magnified and detected, wherein an NA aperture is disposed in a path common to both of the primary electron beam and the secondary electron beam. An electron lens is disposed in the vicinity of a sample surface, and in this arrangement, a crossover produced by the electron gun, the electron lens and the NA aperture may be in conjugate relationships relative to each other with respect to the primary electron beam.

Abstract: A sample inspection system having a sample stage holding a sample to be inspected, electron beam optics so as to radiate an electron beam to the sample, a detector unit that detects a secondly generated signal generated in response to radiation of the sample by the electron beam, a storage for storing a plurality of images obtained from the generated signal and information for classifying the plurality of images by a type of defect in the sample, and an image processing unit. The image processing unit retrieves any of the plurality of images and classifies the retrieved image depending on the type of defect including an electrical defect and a defect in the figure.

Abstract: A method of observing a specimen using a scanning electron microscope, makes it possible to shorten the time required to perform automatic focusing at the time of semiconductor defect automatic review and improves the throughput in the processing in which the specimen is observed. In the above method, the specimen is imaged at a low resolution by the scanning electron microscope to obtain an image, an area for imaging the specimen at a high resolution is specified from the image acquired at the low resolution, the specimen is imaged at a high resolution by the scanning electron microscope to determine a focus position, a focal point of the scanning electron microscope is set to the determined focus position, and a high resolution image in the specified area is acquired in a state in which the focus position has been set to the determined focus position.

Abstract: An ion separation instrument includes an ion source coupled to at least a first ion mobility spectrometer having an ion outlet coupled to a mass spectrometer. Instrumentation is further included to provide for passage to the mass spectrometer only ions defining a preselected ion mobility range. In one embodiment, the ion mobility spectrometer is provided with electronically controllable inlet and outlet gates, wherein a control circuit is operable to control actuation of the inlet and outlet gates as a function of ion drift time to thereby allow passage therethrough only of ions defining a mobility within the preselected ion mobility range. In another embodiment, an ion trap is disposed between the ion mobility spectrometer and mass spectrometer and is controlled in such a manner so as to collect a plurality of ions defining a mobility within the preselected ion mobility range prior to injection of such ions into the mass spectrometer.

Abstract: Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation optical system, and enters a Wien filter (“E×B”). Upon passing through the E×B, the irradiation beam passes through an objective optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective optical system and the E×B in a different direction to a detector via an imaging optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the E×B. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g.

Abstract: One embodiment disclosed relates to a method for inspecting or reviewing a magnetized specimen using an automated inspection apparatus. The method includes generating a beam of incident electrons using an electron source, biasing the specimen with respect to the electron source such that the incident electrons decelerate as a surface of the specimen is approached, and illuminating a portion of the specimen at a tilt with the beam of incident electrons. The specimen is moved under the incident beam of electrons using a movable stage of the inspection apparatus. Scattered electrons are detected to form image data of the specimen showing distinct contrast between regions of different magnetization. The movement of the specimen under the beam of incident electrons may be continuous, and data for multiple image pixels may be acquired in parallel using a time delay integrating detector.

Abstract: An embodiment of the present invention comprises a SEM wherein the entire imaging apparatus of the SEM is supported on air bearings. A multi-stage differentially pumped vacuum seal area provides a localized vacuum zone for wafer examination. A wafer leveling mechanism insures that the top surface of the wafer being examined is place and maintained in a position level with the surface upon which the air bearing supported SEM rests. In use, wafers being examined are loaded into the wafer leveling mechanism, which places and then holds their top surface flush with an examination table. The SEM is then moved on its air bearings and placed in appropriate position over the wafer. Any portion of the wafer can be examined simply by moving the SEM column in the appropriate direction.

Abstract: An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

Abstract: A quality assurance device is provided for ensuring the accuracy and reproducibility of the mechanical parameters of medical linear accelerators (Medical LINACs). The quality assurance devices is configured for placement within two parallel slots on the gantry of a Medical LINAC and includes off-the-shelf components for ensuring the accuracy and reproducibility of an optical distance indicator (ODI) distance measurement readout, collimator and gantry angles indicated by a display of the Medical LINAC, a radiation field size indicated by the Medical LINAC display, the centering of cross-hairs on the gantry with the intersection of the Medical LINAC axes, and alignment of the two lasers emanating from two positions toward the Medical LINAC with the intersection of the Medical LINAC axes.

Abstract: An in-process charge monitor and control system (32) for an ion implanter is provided, comprising: (i) wafer support (22) upon which a plurality of wafers (W) may be positioned for implantation by an ion beam (18), the support having portions thereof disposed intermediate adjacent wafers that are more or less electrically conductive than surfaces of the wafers, the wafer support (22) further having a center (31) from which each of the plurality of wafers is substantially equidistant, the wafer support further provided with first and second apertures (64, 66) disposed substantially equidistant from the center (31); (ii) first and second electrical charge monitors (40, 38) for receiving first and second portions of the ion beam (18a, 18b) through the first and second apertures (64, 66), respectively, and for outputting first and second output signals (44, 42), respectively, indicative of an amount of ion beam current received; and (iii) a comparator (46) for comparing the first and second output signals (44, 42

Abstract: An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

Abstract: A method of measuring of sizes of trapezoidal objects along their lower base includes positioning an object to be measured in a scanning electron microscope so that a line of scanning of an object by an electronic beam corresponds with a direction along which a measurement is performed, selecting a magnification of the microscope so that an image of the object to be measured occupies a substantial part of a length of a scanning line, scanning a video signal of the object in accordance with coordinates along the scanning line, analyzing a shape of the video signal to determine whether the object to be measured has a smaller base facing upwardly a or downwardly, determining a location of stepped slopes on edge maxima of the video signal, and on each stepped slope-a reference point as a point on a lower step of the stepped slope where an absolute value of a derivative of the video signal has a maximum value, fixing of abcissa of the reference points in pixels, and calculating a size of the trapezoidal object alo

Abstract: A measuring cell is formed of base plates joined together. A passage groove is formed on a joining surface of one base plate. Through-holes for introducing and discharging a fluid sample are formed on the other base plate, and the joining surface is provided with an optically opaque Si film as slits. Further, the joining surfaces of the base plates and the inner surface of the passage groove are covered with SiO2 films. Thus, a measuring cell having a sufficiently small passage sectional area, a high air-tightness, a chemically stable measuring chamber, and a high measuring sensitivity can be obtained.

Abstract: The invention provides an aligner enabling to perform high accuracy positioning at manufacturing a multi-layered circuit board. A board alignment mark is photographed by a CCD camera by irradiating X-ray from an X-ray generator at the state removing a photo mask, and position of the board alignment mark is memorized. Then, the photo mask is set on a print circuit board, a mask alignment mark is photographed, and positioning of the mask alignment mark and the print circuit board is performed by comparing with position of memorized board alignment mark and by moving a platen so that the gap becomes zero.