Abstract: A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.

Abstract: A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode, a second collecting electrode and a reflector. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along the straight line. The P-N junction cells are arranged in series along a straight line. The number of the inner electrodes is M?1. At least one inner electrode includes a carbon nanotube array. A photoreceptive surface is parallel to the straight line. A reflector is located on an emitting surface opposite to the photoreceptive surface.

Abstract: The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction.

Abstract: Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for, and methods including, efficient mass transfer during plating so that highly uniform plating layers are obtained. In specific embodiments, the mass transfer is achieved using a combination of impinging flow and shear flow at the wafer surface.

Abstract: A copper electroplating method including dipping a substrate in a copper electroplating solution, the substrate including a seed layer; and forming a copper electroplating layer on the seed layer, wherein the copper electroplating solution includes water, a copper supply source, an electrolytic material, and a first additive, the first additive includes a compound represented by Formula 1, below:

Abstract: The present invention relates to a method for forming a raised conductive image on a non-conductive or dielectric surface, the method comprising placing a metal coordination complex on a surface of the substrate, exposing the surface to electromagnetic radiation, reducing the exposed complex. removing unexposed complex leaving an elemental metal image, removing unexposed metal complex and then plating the resulting elemental metal image with a highly conductive material.

Abstract: The present invention relates to a method for forming a raised conductive image on a non-conductive or dielectric surface, the method comprising placing a metal coordination complex on a surface of the substrate, exposing the surface to electromagnetic radiation, reducing the exposed complex. removing unexposed complex leaving an elemental metal image, removing unexposed metal complex and then plating the resulting elemental metal image with a highly conductive material.

Abstract: The invention relates to a method for grafting an organic film onto an electrically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocol consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.

Abstract: Disclosed is an electroplating method for filling cavities, through holes, blind holes, or micro blind holes of a work piece with metals. According to said method, the work piece containing cavities, through holes, blind holes, or micro blind holes is brought in contact with a metal deposition electrolyte, and a voltage is applied between the work piece and at least one anode such that a current flow is fed to the work piece. The invention method is characterized in that the electrolyte encompasses a redox system.

Abstract: Methods for producing a high temperature oxidation resistant coating on a superalloy component and the coated superalloy component produced thereby are provided. Aluminum or an aluminum alloy is applied to at least one surface of the superalloy component by electroplating in an ionic liquid aluminum plating bath to form a plated component. The plated component is heat treated at a first temperature of about 600° C. to about 650° C. and then further heat treated at a second temperature of about 700° C. to about 1050° C. for about 0.50 hours to about two hours or at a second temperature of about 750° C. to about 900° C. for about 12 to about 20 hours.

Abstract: A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.

Abstract: An antireflection film of the present invention includes a plurality of first raised portions, each of which has a two-dimensional size of not less than 1 ?m and less than 100 ?m when seen in a direction normal to the film, and a plurality of second raised portions, each of which has a two-dimensional size of not less than 10 nm and less than 500 nm when seen in a direction normal to the film. In at least one embodiment, the antireflection film has a first surface shape or a second surface shape that is inverse to the first surface shape relative to a film surface. In the first surface shape, the second raised portions are provided on the first raised portions and between the plurality of first raised portions, and the elevation angle ? of a surface of the first raised portions relative to the film surface is about 90° or more. The antireflection film of the present invention has a more excellent antiglare function than conventional ones.

Abstract: The present invention relates to an electrolyzer for producing sodium hypochlorite by electrolyzing brine such as salt water or seawater and the like, and more specifically to a horizontal non-membrane type electrolyzer of a new structure which can maintain a constant interval among electrode plates without using a welding means or an adhering means on the inside of a housing by including a separator for dividing an inner space of a hollow type housing into a plurality of electrode chambers; the electrode plates which are arranged in parallel to each other in the constant interval within a rectangular space part of the separator; and a fixing bar for fixing the separator to an inner wall of the housing.

Abstract: An apparatus and method for electrochemically treating the struts of an intravascular stent is disclosed. An intravascular stent is mounted in a chamber and is electrochemically treated in order to remove a portion of the stent struts in order to form an airfoil shape. The airfoil-shaped stent struts will reduce turbulent blood flow in the vasculature in which the stent is implanted thereby improving clinical outcome.

Abstract: A grinding/electrolysis combined multi-wire-slicing processing method for silicon wafers includes the following steps: first, with a metal slicing wire (10) provided on a multi-wire-slicing machine serving as cathode, a silicon rod or a silicon ingot (1) (anode) is processed by grinding/electrolysis combined multi-wire-slicing through application of a voltage; second, during said processing, the metal slicing wire (10) and the silicon rod or a silicon ingot (1) are connected with a low-voltage continuous or pulsed direct current power supply (9); third, an electrolytic liquid is sprayed into the cutting area to ensure cooling and anode erosion. The method reduces macroscopic cutting force and enables a grinding/electrolysis combined multi-wire-slicing processing method for large size ultra-thin silicon wafers.

Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and a sacrificial secondary metal that provides structural support for the primary metal component during machining. More specifically, techniques are disclosed to increase the rate of secondary metal deposition between primary metal features in order to prevent voiding in the sacrificial secondary metal and thus enhance structural support of the primary metal during machining.

Abstract: The present invention concerns an electrochemical pattern replication method, ECPR, and a construction of a conductive electrode for production of applications involving micro and nano structures. An etching or plating pattern, which is defined by a conductive electrode, a master electrode, is replicated on an electrically conductive material, a substrate. The master electrode is put in close contact with the substrate and the etching/plating pattern is directly transferred onto the substrate by using a contact etching/plating process. The contact etching/plating process is performed in local etching/plating cells, that are formed in closed or open cavities between the master electrode and the substrate.

Abstract: A method comprising: dispersing carbon nanotubes in a solvent; and depositing the carbon nanotubes on a porous, conductive substrate; wherein the porous, conductive substrate is capable of functioning as a filter and a working electrode. The method of claim 1 further comprising: engaging the porous, conductive substrate with deposited carbon nanotubes in an electrochemical cell; and depositing at least one metallic structure on the surface of the carbon nanotubes from an electrolyte solution to form metallized carbon nanotubes. A composite comprising: metallized carbon nanotubes generated by the method of claim 2; wherein the at least one metallic structure comprises a conductive metal atom selected from the group consisting of platinum, gold nickel, copper, iron, chromium, zinc, and combinations thereof; and a matrix material selected from the group consisting of epoxies, thermosets, thermoplastics, elastomers, metals, metal matrix composites, ceramics and combinations thereof.

Abstract: Example embodiments relate to a solar cell configured to scatter incident light to be penetrated so as to increase a light progress path and includes a polymer-dispersed liquid crystal (PDLC) layer on at least one of a first and a second electrodes.

Abstract: An embodiment of a system and method provides a current regulating device that controls or regulates the current provided to electrolysis chambers that produce hydrogen and oxygen gases. One embodiment of the current regulating device uses the temperature of the fluid in the electrolysis chambers to control the widths of the pulses delivered to the electrolysis chambers to regulate production. Another embodiment of the current regulating device regulates and limits the average current delivered to the electrolysis chambers by adjusting the pulse widths, according to the current demanded during each conduction pulse.