Patents Examined by Janie J. Brophy
  • MOS transistor with local channel compensation implant
    Patent number: 6465315
    Abstract: A method of fabricating an integrated circuit with a source side compensation implant utilizes tilt-angle implants. An asymmetric channel profile is formed in which less dopants are located on a source side. The process can be utilized for P-channel or N-channel metal oxide field semiconductor effect transistors (MOSFETS).
    Type: Grant
    Filed: January 3, 2000
    Date of Patent: October 15, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Bin Yu