Patents Examined by Jarrett Strark
  • FinFET devices containing merged epitaxial Fin-containing contact regions
    Patent number: 8900934
    Abstract: A plurality of semiconductor fins are formed which extend from a semiconductor material portion that is present atop an insulator layer of a semiconductor-on-insulator substrate. A gate structure and adjacent gate spacers are formed that straddle each semiconductor fin. Portions of each semiconductor fin are left exposed. The exposed portions of the semiconductor fins are then merged by forming an epitaxial semiconductor material from an exposed semiconductor material portion that is not covered by the gate structure and gate spacers.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: December 2, 2014
    Assignee: International Business Machines Corporation
    Inventors: Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Chung-Hsun Lin, Sebastian Naczas, Alexander Reznicek, Tenko Yamashita