Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.

Abstract: A ceramic-matrix composite having a multilayered interfacial coating adapted to protect the reinforcing fibers from long-term oxidation, while allowing these to bridge the wake of advancing cracks in the matrix, is provided by selectively mismatching materials within adjacent layers of the interfacial coating, the materials having different coefficients of thermal expansion so that a low toughness interface region is created to promote crack deflection either within an interior layer of the mismatched interfacial coating or between adjacent layers of the mismatched interfacial coating.

Abstract: An Nb—Sn compound superconducting wire precursor comprising a matrix of a Cu-base metal, a plurality of composite filaments each composed of a niobium layer of an Nb-base metal and a titanium layer of pure Ti formed so as to be enveloped in the inside of the niobium layer, and Sn diffused in the matrix by heat treatment so as to be combined with the niobium layer to form a compound, the plurality of composite filaments being embedded in the matrix so as not to be in contact with one another.