Abstract: Radically post-crosslinked polymers are made by a process comprising the steps of: (1) forming a polyurethane (a*) by reacting a compound (a) with an aliphatic and/or an aromatic isocyanate and a compound (c) wherein compound (a) is the product of the reaction of an epoxidized fatty acid ester and/or an epoxidized triglyceride with acrylic acid and/or methacrylic acid and wherein compound (c) is a polyol ester having two or more C?C double bonds per molecule; (2) forming a crosslinked polyurethane by reacting the polyurethane (a*) with a radical initiator (b). The polymers are useful as components in composites comprised of natural and/or synthetic fibers.

Abstract: A silane-modified phenolic resin is prepared by reacting a phenolic compound (e.g., resorcinol) with an aldehyde to produce a phenolic novolak resin. The phenolic novolak resin is further reacted with at least one silane compound to produce the silane-modified phenolic resin. The reaction is typically carried out in the presence of an acid or base catalyst. The resulting resin has a lower softening point and can be used as a methylene acceptor compound in a vulcanizable rubber composition.

Abstract: The present invention relates to a molecular weight-enlarged, homogeneously soluble ligand, which includes: an average molecular weight of at least 1000 g/mol; a molecular weight-enlarging polymer; optionally, a linker; and at least one homochiral active center; wherein the active center is bound to the molecular weight-enlarging polymer through the linker or is bound directly to the molecular weight-enlarging polymer, methods of preparing, catalysts containing same, and methods of using same.

Abstract: A CMP apparatus has an extended life and improved polishing accuracy and is capable of not only preventing a wafer 100 from dashing out of a carrier 1 and being damaged or wound, but also adjusting the elasticity of a pressure pad to a desired value in a fine manner. The CMP apparatus includes the carrier 1, a suction mechanism 4 having an air passage 40 disposed to open on a lower surface of the carrier 1 for drawing air, and a surface plate 300 having a hard polishing pad 220 and a soft pad 210 adhered thereto. The pressure pad in the form of a porous thin Teflon layer 7 having a thickness of 5 mm is adhered to a lower surface of the carrier 1 which holds the wafer 100. Thus, the rear surface of the wafer 100 is maintained in a horizontal state by the Teflon layer 7, and the warpage and/or irregularities in the thickness of the wafer 100, which appear on the front surface of the wafer 100, can be absorbed by the soft pad 210 and the hard polishing pad 220.