Abstract: A mask module includes a framework, a first strip plate fixed on the framework and extending along a first direction, and a first mask. The first mask is located on a side, deviating from the framework, of the first strip plate. The first mask includes at least one preset area, and the preset area includes at least one opening area. The first strip plate is provided with a first concave-convex structure on one side edge along the first direction. At least one convex structure is provided in a middle of the first concave-convex structure along the first direction. In a direction perpendicular to a surface of the first mask, the first concave-convex structure and the convex structure cover at least a part of area of the at least one opening of the preset area. The convex structure and the first strip plate are integrally formed.

Abstract: A multi-chamber semiconductor manufacturing system is provided, including: a base, a plurality of processing units and a transfer unit. The base includes a main body and a plurality of supporting frames protrudingly disposed on a mounting surface of the main body. The plurality of processing units are connected to the plurality of supporting frames. The transfer unit is connected to the plurality of supporting frames and located between the plurality of processing units. The transfer unit is configured to transfer a substrate between the plurality of processing units. An aspect ratio value of the base is between 1 and 3.

Abstract: A gas dispenser utilized in a deposition apparatus is provided. The gas dispenser includes a showerhead comprising a plurality of holes, and a mask layer formed on a surface of the showerhead, wherein the holes penetrate through the mask layer. A deposition apparatus using the gas dispenser is also disclosed.

Abstract: Provided is a ceramic susceptor, which includes a ceramic plate with a radio-frequency electrode disposed therein, wherein the ceramic plate includes a connector connected to the radio-frequency electrode, the ceramic susceptor includes a rod having one end connected to the connector to supply power to the radio-frequency electrode, and the rod employs Mo, W, or an alloy thereof as a base material and includes a metal nitride film containing Cr on the surface of the base material.

Abstract: An alignment fixture for a reactor system may comprise a fixture body comprising an inner perimeter at least partially defining a shape which comprises an inner space of the fixture body, wherein the inner space is configured to receive a susceptor of a reactor system; and/or a measuring protrusion coupled to the fixture body at a first position and protruding from the fixture body toward the inner space. The measuring protrusion may comprise an indicator between the fixture body and a measuring protrusion end of the measuring protrusion.

Abstract: Methods and apparatus of controlling a temperature of components in a process chamber that is heated by a plasma or a heater and cooled by a coolant flow through a heat exchanger. An apparatus, for example, can include a chuck assembly and/or a plasma source including a respective cooling plate; a proportional bypass valve connected between the respective cooling plate and a heat exchanger; a temperature sensor configured to measure a temperature of the coolant through the outlet channel of the respective cooling plate; and a controller that receives a measured temperature from the temperature sensor measuring, and in response to receiving the measured temperature controls a rate of flow of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve.

Abstract: Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.

Abstract: Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Abstract: An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.

Abstract: A semiconductor processing system includes; a chamber, a substrate support disposed in the chamber, and a temperature controller including a thermal section disposed under the substrate support and a coupling section including at least one coupling section member. The thermal section includes a first plate and a second plate spaced apart under the substrate support, and each of the first plate and the second plate is coupled to a side portion of the substrate by at least one coupling section member.

Abstract: Embodiments of the invention are directed to a deposition chamber for forming a poly-para-xylylene film. A non-limiting example of the deposition chamber includes a chamber body, an inlet coupling the chamber body to a furnace, and an outlet coupling the chamber body to a vacuum pump. The deposition chamber includes at least one heating element arranged on a surface of the chamber body. The heating element is configured to raise an internal temperature of the deposition chamber body to a substantially uniform internal temperature across an entire internal volume of the chamber body.

Abstract: There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

Abstract: Apparatuses and a method for gas phase deposition of high aspect ratio molecular structures, HARM-structures, are presented. The first aspect relates to an apparatus configured for oriented gas phase deposition of HARM-structures on a filter. The second aspect relates to an apparatus configured for oriented gas phase deposition of HARM-structures on a substrate. A system comprising multiple apparatuses according to the second aspect is also presented. Elements of the apparatuses are arranged to create a laminar flow of gas comprising HARM-structures in the deposition area, and to direct this flow at least partially parallel to the deposition area. Another aspect of the invention is a method for oriented deposition of HARM-structures, suitable for deposition both on a filter and a substrate.

Abstract: A substrate processing apparatus includes a vacuum chamber, a rotary table that is rotatably provided inside the vacuum chamber, a stage that is rotatable with respect to the rotary table, the stage having a center of rotation at a position spaced apart from a center of rotation of the rotary table, and the stage having a flange provided at a lower surface of the stage, a first holder and a second holder, the flange being sandwiched between the first holder and the second holder, and a pressing member configured to press the second holder in a direction in which the second holder comes closer to the first holder.

Abstract: Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.

Abstract: A recipe updating method of a plasma processing apparatus includes: performing a plasma processing on a substrate mounted on a stage using a first recipe including an application timing of a radio-frequency power for plasma generation; measuring a reference timing at which a temperature of the stage drops to a minimum value and a first maximum value of the temperature of the stage in association with the first recipe; performing the plasma processing on the substrate using a second recipe obtained by changing the application timing of the first recipe to the reference timing; measuring a second maximum value of the temperature of the stage in association with the second recipe; and updating the first recipe to the second recipe when the second maximum value is smaller than the first maximum value.

Abstract: Even when two processing furnaces are included, space can be saved by removing needed equipment. Included are: first and second furnaces that process a substrate; a heat exchanger that cools a refrigerant discharged from the first and second furnaces; an exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends out the refrigerant to a downstream side; first and second flow paths that connect the first and second furnaces, the heat exchanger, and the exhaust blower to each other such that the refrigerant can flow therethrough; first and second dampers having variable opening degrees disposed upstream from the heat exchanger in the first and second flow paths, respectively; and a controller that controls heating and cooling of the first and second furnaces. The first and second flow paths merge together in at least a part of each of the first and second flow paths.

Abstract: An apparatus is for trapping multiple reaction by-products for a semiconductor process, in which a trapping region is divided by a difference in vertical temperature distribution according to a distance spaced apart from a heater and by structures for switching flow path directions and generating multiple vortices using a trapping structure, and reaction by-product mixtures contained in a gas, which is discharged after a process of depositing multiple different thin film layers is performed in a process chamber during a semiconductor manufacturing process, is trapped by a single trapping apparatus, such that a reaction by-product, which is aggregated in the form of a thin film in a relatively high-temperature region, is trapped by a first trapping part in an upper region, and a reaction by-product, which is aggregated in the form of powder in a relatively low-temperature region, is trapped by a second trapping part in a lower region.