Patents Examined by Jeffrie R. Lund
  • Patent number: 11177131
    Abstract: Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: November 16, 2021
    Assignee: Novellus Systems, Inc.
    Inventors: Lisa Marie Gytri, Jeff Gordon, James Forest Lee, Carmen Balderrama, Joseph Brett Harris, Eugene Smargiassi, Stephen Yu-Hong Lau, George D. Kamian, Ming Xi
  • Patent number: 11164726
    Abstract: A gas supply member according to an embodiment includes: a base material that has a gas flow path capable of flowing a gas from an upstream side to a downstream side, a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and a discharge port connecting the gas flow path and the main surface; and a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material. The film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: November 2, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tetsuyuki Matsumoto, Makoto Saito, Hisashi Hashiguchi
  • Patent number: 11149350
    Abstract: A shower plate for a plasma deposition apparatus, the shower plate including: a plurality of apertures each extending from a rear surface of the shower plate to a front surface for passing a carrier gas therethrough in this direction to a chamber, a plurality of first apertures each extending from a first connecting aperture to an inner part of the front surface for passing gas therethrough in this direction to the chamber, and a plurality of second apertures each extending from a second connecting aperture to an outer part of the front surface for passing gas therethrough in this direction to the chamber, wherein the first connecting aperture connects the first apertures to at least one first aperture extending from a sidewall side of the shower plate and the second connecting aperture connects the second apertures to at least one second aperture extending from the sidewall side.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: October 19, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Wataru Adachi, Kazuo Sato
  • Patent number: 11139152
    Abstract: The inventive concept relates to an apparatus for processing a substrate. The substrate processing apparatus includes a scatter that is disposed over a baffle and that separates plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening to face the first opening and that collides with plasma supplied from a plasma generation unit and impurities.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: October 5, 2021
    Assignee: PSK INC.
    Inventor: Hung Sheng Wang
  • Patent number: 11136665
    Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: October 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Dale Du Bois, Mohamad A. Ayoub, Robert Kim, Amit Kumar Bansal, Mark Fodor, Binh Nguyen, Siu F. Cheng, Hang Yu, Chiu Chan, Ganesh Balasubramanian, Deenesh Padhi, Juan Carlos Rocha
  • Patent number: 11136667
    Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.
    Type: Grant
    Filed: January 8, 2007
    Date of Patent: October 5, 2021
    Assignee: EASTMAN KODAK COMPANY
    Inventor: David H. Levy
  • Patent number: 11139150
    Abstract: A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an N-way gas flow ratio controller having N outputs coupled to said N gas inlets respectively, and (e) an M-way gas flow ratio controller having M outputs, respective ones of said M outputs coupled to said tunable gas nozzle and a gas input of said N-way gas flow ratio controller.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: October 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Yan Rozenzon, Kyle Tantiwong, Imad Yousif, Vladimir Knyazik, Bojenna Keating, Samer Banna
  • Patent number: 11112697
    Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: September 7, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Viachslav Babayan, Douglas A. Buchberger, Jr., Qiwei Liang, Ludovic Godet, Srinivas D. Nemani, Daniel J. Woodruff, Randy Harris, Robert B. Moore
  • Patent number: 11111581
    Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: September 7, 2021
    Assignee: Lam Research Corporation
    Inventors: Chunguang Xia, Ramesh Chandrasekharan, Douglas Keil, Edward J. Augustyniak, Karl Frederick Leeser
  • Patent number: 11104992
    Abstract: Embodiments of the invention relate to a substrate processing apparatus. In one embodiment, a substrate processing apparatus includes a plurality of process units. The process unit includes a process chamber for processing a substrate, an exhaust conduit connected to the process chamber and an exhaust pump arranged in the path of the exhaust conduit. The substrate processing apparatus further includes a connecting conduit connected to the exhaust conduits of the process units in the upstream of the exhaust pump and a switching unit which switches an exhaust path of the process chamber to the other exhaust pump in the other process unit via the connecting conduit.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: August 31, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Atsushi Sano
  • Patent number: 11091837
    Abstract: A fluid control system is provided which, without reducing the supply flow rate of a fluid, is considerably more miniaturized and integrated. This fluid control system includes base blocks and fluid devices respectively installed on upper surfaces of the base blocks. The base blocks each include protruding pipe parts protruding in a longitudinal direction. The protruding pipe parts each communicate with a corresponding second flow path. The protruding pipe part on a downstream side end surface of the base block and the protruding pipe part on an upstream side end surface of the base block are air-tightly or liquid-tightly connected to each other by a welding material.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: August 17, 2021
    Assignee: FUJIKIN INCORPORATED
    Inventor: Hidehiro Doya
  • Patent number: 11085112
    Abstract: A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: August 10, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Mark Hawkins, Matthew G. Goodman, Shawn Thomas
  • Patent number: 11088019
    Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: August 10, 2021
    Assignee: Lam Research Corporation
    Inventors: Patrick A. Van Cleemput, Seshasayee Varadarajan, Bart J. van Schravendijk
  • Patent number: 11049698
    Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The cambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: June 29, 2021
    Assignee: Applied Materials, Inc.
    Inventor: Dmitry Lubomirsky
  • Patent number: 11047045
    Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: June 29, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soyoung Lee, Hyunjae Lee, Ik Soo Kim, Jang-Hee Lee
  • Patent number: 11041241
    Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: June 22, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Kazuki Moyama, Koji Maruyama
  • Patent number: 11041243
    Abstract: The invention relates to coating precursor nozzle (15) for subjecting a surface of a substrate (5) to a coating precursor. The nozzle (15) having a nozzle output face (10a), first and second nozzle side edges (31, 32), and first and second nozzle end edges (33, 34). The coating precursor nozzle (15) comprising a precursor supply channel (16), a first discharge channel (17a), a first cross purge gas channel (18a), a second cross purge gas channel (18b), a first edge purge gas channel (19a) and at least one first auxiliary purge gas channel (20). The invention further relates to a nozzle head (1).
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: June 22, 2021
    Assignee: BENEQ OY
    Inventor: Pekka T. Soininen
  • Patent number: 11001925
    Abstract: A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: May 11, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Young Hoon Kim, Yong Gyu Han, Dae Youn Kim, Hyun Soo Jang, Jeong Ho Lee
  • Patent number: 11004703
    Abstract: A semiconductor processing apparatus is disclosed, which comprises a chamber body having an interior volume, a substrate support pedestal disposed in the interior volume, a gas outlet member positioned above the substrate support pedestal inside the interior volume, having a plurality of dispense nozzles, and a gas guiding device positioned between the gas outlet member and the substrate support pedestal. The gas guiding device includes a plurality of petal elements pivotally arranged around the dispense nozzles of the gas outlet member and circumferentially overlapping one another, configured to dynamically adjust an output gas distribution over the substrate support pedestal.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: May 11, 2021
    Assignee: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
    Inventors: Kunho Kim, Jinsun Choi
  • Patent number: 10998205
    Abstract: A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: May 4, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Tomoyasu Miyashita, Daigi Kamimura, Atsushi Umekawa