Patents Examined by Jeffrie Robert Lund
  • Patent number: 10074521
    Abstract: An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: September 11, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Daniel Arthur Brown, Jeffrey A. Bogart, Ian J. Kenworthy
  • Patent number: 10068674
    Abstract: The invention relates to a jet spouted bed reactor, comprising a cylindrical area, a gas injection pipe at the base of the cylindrical area, and a transition area, connecting the upper end of the pipe to the base of the cylindrical area, this transition area having a convex profile in a plane extending through the axis (YY?) of flow of a fluid in the pipe.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: September 4, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Meryl Brothier, Dominique Moulinier, Philippe Rodriguez, Carine Ablitzer
  • Patent number: 10066295
    Abstract: The present invention relates to a source container and to a vapor-deposition reactor. The source container according to one embodiment of the present invention comprises: a container comprising an inner wall for delimiting a first space for holing a source material, and a second space which is adjacent to the first space and is for the mixing of vapor emitted from the source material and a carrier gas taken into the inside thereof; a carrier gas inflow pathway which connects the outside of the container second space; a mixed gas discharge pathway which connects the outside of the container and the second space; and a flow-limiting member which expands inside the second space, and provides a first flow barrier surface between the inflow port and the discharge port.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: September 4, 2018
    Assignee: UNITEX CO., LTD.
    Inventors: Myung Gi Lee, Yong Eui Lee, Un Jung Kim
  • Patent number: 10041172
    Abstract: A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: August 7, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Chul Kim, Jung-Il Ahn, Jung-Hun Seo, Jong-Cheol Lee, Kyu-Hee Han, Seung-Han Lee, Jin-Pil Heo