Abstract: A method for making an apertured aluminum oxide substrate by selectively masking a sapphire wafer, depositing aluminum oxide adjacent the wafer and the mask, and removing the aluminum oxide deposited adjacent the mask and the mask, whereby an aperture is formed in the aluminum oxide. A composite is thus formed of an insulating substrate of monocrystalline sapphire with an insulating epitaxial layer of aluminum oxide apposed thereto, the epitaxial layer having an aperture therein which may be filled with an island of epitaxial silicon.
Type:
Grant
Filed:
December 30, 1976
Date of Patent:
January 17, 1978
Assignee:
RCA Corporation
Inventors:
Joseph Michael Shaw, Karl Heinz Zaininger