Abstract: In a method for exhausting processing gases out of a dry etching apparatus, processing gases are introduced into a processing chamber of the dry etching apparatus and converted into a gas plasma to etch a semiconductor workpiece. After plasma etching the semiconductor workpiece, the gas plasma is centrally gathered under the semiconductor workpiece by a sucking force formed surrounding the bottom periphery of the semiconductor workpiece, and then, is exhausted. The semiconductor workpiece to be processed is placed on a chuck under which an exhausting means is arranged.

Abstract: A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral border of the structures defined by the etching mask, then being partially removed again during the following etching step and being redeposited in deeper side walls of the structure newly formed due to the etching reaction, and the etching is performed with an etching gas containing 3 to 40 vol % oxygen. In this way it is possible to prevent sulfur contamination in the exhaust gas area in high rate etching of silicon.

Abstract: A produce cleaning system (20) and process (10) that employs plural forms of energy in an ionic liquid-based washing system (22, 24, 26) is described. The washing system (22, 24, 26) includes employing solvents and solutes in the wash bath (24) which promote the conduction of electrical energy. The electrical energy can be applied to the produce in the wash bath (24) in various waveforms, such as a modulating wave superimposed on a carrier wave. Additionally, ultrasonic energy is employed to provide high-frequency mechanical pressure waves against the produce. The electrical energy and the mechanical energy combine to produce energy in the applicable resonant frequency range that acts to destroy or transform pathogens, dirt and synthetic molecules that may exist on the produce to either destroy them or render them harmless.

Abstract: The present invention relates to a method for manufacturing an ink jet recording head using wet etching, the method providing a high production efficiency, an ink jet recording head manufactured by this method, and an ink jet recording apparatus using this recording head. A silicon substrate, constituting a recording head, has functional elements formed thereon and including heat-generating resister elements and a drive circuit therefor, a protective layer is formed on the silicon substrate for protecting the functional elements from an etchant that is in contact with a substrate surface via an adhesive layer, and an ink supply port is formed by means of wet etching. The adhesive layer allows the protective layer to adhere well to the substrate to appropriately prevent the functional elements from being damaged by the etchant.

Abstract: A method for cleaning a photovoltaic module, the photovoltaic module having a first electrode layer formed on an insulating substrate, a photovoltaic layer, and a second electrode layer. The laminate is electrically divided between a power generating region and peripheral regions by means of grooves. The power generating region is divided into a plurality of photovoltaic cells by means of laser-scribed grooves. At least some of the photovoltaic cells are connected electrically in series with one another. The cleaning method includes a process for transporting the photovoltaic module immersed in a cleaning fluid, while being kept in a horizontal position with the laminate upward as it is transported, and applying ultrasonic vibration to the cleaning fluid, thereby removing particles in the scribed grooves.

Abstract: A method of producing indicia on a metallized and/or a holographic film comprising the steps of (a) printing, on an etchable surface of the film, a co-polymeric primer in a predetermined pattern, (b) depositing an activated etching substance on top of at least the unprinted metallized and/or holographic material under conditions sufficient to etch away portions of the film not covered by the primer and thereby forming a crystallized material as the debris of etching, (c) removing the crystallized material formed during etching and also removing any excess etching substance, and (e) drying the etched, printed film. Optionally, a reinforcing film layer may be disposed over the etched surface. The reinforcing layer may be colored in a predetermined pattern, especially a pattern that corresponds to the pattern of printing of the non-etchable copolymer.

Abstract: The invention includes a method of etching silicon dioxide, comprising doping a layer of silicon dioxide to form a layer of doped silicon dioxide and etching the doped silicon dioxide layer with phosphoric acid.

Abstract: In the method of fabricating an inductor, at least first and second conductive segments are formed in a semiconductor layer spaced apart in a first direction. A first dielectric layer is formed over a portion of the semiconductor layer along the first direction such that the first dielectric layer crosses the first and second conductive segments. A conductive core is formed on the first dielectric layer, and a second dielectric layer is formed over the semiconductor layer. First and second contact holes are formed in the second dielectric layer such that the first contact hole exposes a portion of the first conductive segment on a first side of the first dielectric layer and the second contact hole exposes a portion of the second conductive segment on a second side of the first dielectric layer.

Abstract: A method of removing ceramic core material from an internal passage of a superalloy airfoil casting using a CNC controlled fluid spray nozzle in a manner that the fluid spray nozzle is caused to laterally scan and/or rotary orbit an area of one or more openings of one or more passages at an exterior casting surface to improve removal of material residing in the passage.

Abstract: Provided is a process for etching glass objects by chemical treatment. The process includes (a) at least one stage of chemical treatment of the object, and (b) at least one stage of rinsing the objects etched by the treatment of step (a) with an aqueous solution of one or more alkali metal or alkaline earth metal cation salts.

Abstract: A vibrating structure gyroscope having a silicon substantially planar ring vibrating structure (1) capacitive means for imparting drive motion to and sensing motion of the vibrating structure (1), and a screen layer (15) surrounding the capacitive means is made by depositing photoresist material (9) on a glass or silicon substrate (7), hardening, patterning and developing the photoresist (9) to expose areas of the substrate (7), etching the exposed areas to form cavities (10) therein, stripping any remaining photoresist material (9) attaching a silicon layer (8) to the cavitated substrate (7) depositing a layer of aluminium on the silicon layer (8), depositing photoresist material on the aluminium layer, hardening, patterning and developing the photoresist layer to expose areas of the aluminium layer, etching the exposed areas of the aluminium layer to leave regions of aluminium on the silicon layer providing bond pads (11, 12, 13 and 14), stripping the remaining photoresist from the aluminium layer, depositi

Abstract: A desmear process for removing resin smeared on an interior wall of a through hole drilled in a resinous substrate, especially resinous substrates made from epoxy, polyimide, cyanate ester resins or bis-maleimide triazine epoxy resins. The process involves contacting the resin smear with a mixture of gamma-butyrolactone and water to soften the resin smear, followed by treatment with an alkaline permanganate solution to remove the softened resin, and treatment with an aqueous acidic neutralizer to neutralize and remove the permanganate residues. The gamma-butyrolactone is effective as a single solvent for softening and swelling resin smears from substrates made from epoxy, polyimide, cyanate ester resins, bis-maleimide triazine epoxy resins, and polyimide resins.

Abstract: A method of performing a shallow trench isolation etch in a silicon layer of a layer stack is disclosed. The layer stack includes a silicon layer being disposed below a pad oxide layer, the pad oxide being disposed below a nitride layer, and the nitride layer being disposed below a photoresist mask. The etching takes place in a plasma processing chamber. The method includes flowing a first etchant source gas into the plasma processing chamber, forming a first plasma from the first etchant source gas, and etching through the nitride layer with the first plasma. The method further includes flowing a second etchant source gas into the plasma processing chamber, forming a second plasma from the second etchant source gas, and substantially removing the photoresist mask with the second plasma, wherein a substantial portion of the photoresist mask is removed from above the nitride layer before the silicon layer.

Abstract: A method for separating layers from articles made of high-speed steel and having at least one layer of TiAlN, includes applying an alkaline solution containing hydrogen peroxide, a base as well as acid to the layer. The acid is selected from phosphates, phosphonates and phosphonic acids.

Abstract: A surface having exposed doped silicon dioxide such as BPSG is cleaned with a solution that etches thermal oxide at least one-third as fast as it etches the exposed doped silicon dioxide, resulting in more thorough cleaning with less removal of the exposed doped silicon dioxide. Specific applications to formation of container capacitors are disclosed. Preferred cleaning solutions include about 46 parts ammonium fluoride, about 9.5 parts hydrogen fluoride, and about 8.5 parts ammonium hydroxide in about 100 parts water by weight; and about 670 parts ammonium fluoride and about 3 parts hydrogen fluoride in about 1000 parts water by weight. The latter solution is also useful in cleaning methods in which a refractory metal silicide is exposed to the cleaning solution such as in cleaning prior to spacer formation or prior to a gate stack contact fill, in which case about 670 parts ammonium fluoride and about 1.6 parts hydrogen fluoride in about 1000 parts water is most preferred.

Abstract: A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

Abstract: Methods and articles used to fabricate flexible circuit structures are disclosed. The methods include depositing a release layer on substrate, and then forming a conductive laminate on the release layer. After the release layer is formed, the conductive laminate can be easily separated by the substrate to eventually form a flexible circuit structure.

Abstract: A method for cleaning a PZT thin film using an etchant is provided. The method employs a combination of HF (or buffered oxide etchant (BOE)) and acetic acid, or a combination of HF(BOE), acetic acid and alcohol, as an etchant to thus reduce an etching rate of a PZT thin film, which is greatly dependent on the density of HF, thereby etching the PZT thin film to a finer dimension of thickness of 100Å or less using the etchant. Therefore, only secondary phase crystals or etching damaged layers on the surface of the PZT thin film can be eliminated.

Abstract: It is an object of a method of manufacturing a thin-film magnetic head of the invention to improve the insulating property between an electrode connected to a magnetoresistive element and a shield layer without increasing the thickness of an insulating layer between the magnetoresistive element and the shield layer. In the method, a pair of conductive layers to be the electrode (lead) connected to the MR element are formed on an insulating layer. Magnetic layers are formed to surround the conductive layers while an insulating film is placed between the magnetic layers and the conductive layers. Next, an insulating layer of alumina, for example, is formed over the entire surfaces of the magnetic layers. This insulating layer is polished to the surfaces of the conductive layers and flattened.

Abstract: In a glass substrate for use in a magnetic recording medium, a surface roughness of at least a principal surface of the glass substrate is measured by the use of the interatomic force microscope (AFM), Ra falls within the range between 0.2 and 2.5 nm, Rmax falls within the range between 3 and 25 nm, and Rmax/Ra falls within the range between 3 and 35.