Patents Examined by Joanthan Hack
  • Method for forming porous silicon dioxide insulators and related structures
    Patent number: 6255156
    Abstract: A porous silicon dioxide insulator having a low relative dielectric constant of about 2.0 or less is formed from a silicon carbide base layer. Initially, at least one layer of silicon carbide is deposited on a semiconductor substrate. The silicon carbide layer is then etched to form a porous silicon carbide layer, which is oxidized to produce the final porous silicon dioxide layer.
    Type: Grant
    Filed: February 7, 1997
    Date of Patent: July 3, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Leonard Forbes, Kie Y. Ahn