Abstract: To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized.

Abstract: Aspects of the invention recite wire bonding on thinned portions of a lead-frame that is configured for use in an IC package. A harder lead-frame material, improved adhesive tape, and various structural features of the lead-frame itself, in various combinations or subcombinations, facilitate the attachment of wire bonds to thinned areas of the lead-frame. This eliminates the need for supports placed directly under the bond sites, removing unwanted conductive areas on the outer surface of an IC package.