Patents Examined by John E. Kettle
  • Method of manufacturing a semiconductor device
    Patent number: 4722882
    Abstract: A method of manufacturing a semiconductor device, in which method a pattern is etched by a dry etching process, for example, in a substrate protected by a resist pattern which is the negative of the pattern to be etched. In order to obtain a resist pattern which has adequate resistance to dry etching and which has been produced from a resist film having a high sensitivity, the resist pattern is produced in two stages. First a pattern is formed in a resist film present on a substrate, which resist film has been formed from a polymer made by polymerizing a monomer of the structure ##STR1## wherein R.sub.1 is an alkyl group, Cl, Br, CN, H or R.sub.2, R.sub.2 is --COCl, --COBr, --COOH or --CONH.sub.2, and R.sub.1 does not react with R.sub.2. Then the material of the resist pattern is reacted with a mono- or poly-functional organic compound, with an organic siloxane containing SiH groups or other Si-containing functional groups which react with the resist pattern material, or with a metallo-organic compound.
    Type: Grant
    Filed: January 6, 1986
    Date of Patent: February 2, 1988
    Assignee: U.S. Philips Corporation
    Inventor: Edward D. Roberts
  • Doped amorphous silicon photoconductive device having a protective coating
    Patent number: 4683186
    Abstract: A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer.A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.
    Type: Grant
    Filed: October 10, 1985
    Date of Patent: July 28, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kunio Ohashi, Tadashi Tonegawa, Shoichi Nagata, Masatsugu Nakamura
  • Unidirectional panel
    Patent number: 4673609
    Abstract: A panel which comprises a substrate of transparent or translucent material having applied to one or both sides a design superimposed on, or forming part of, an opaque pattern so that the design on one side of the panel cannot be seen from the other side.
    Type: Grant
    Filed: July 29, 1985
    Date of Patent: June 16, 1987
    Inventor: George R. Hill
  • Alignment mark on a semiconductor and a method of forming the same
    Patent number: 4640888
    Abstract: An alignment mark formed on a semiconductor wafer is disclosed. The mark comprises a mark member provided on a base region and a reflection changing portion provided on the mark member. The reflection changing portion has slightly inclined side walls.
    Type: Grant
    Filed: January 17, 1985
    Date of Patent: February 3, 1987
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Yoshio Itoh, Hiroshi Ohtsuka, Tadashi Nishimuro, Norio Moriyama
  • Golf club head construction
    Patent number: 4555115
    Abstract: A composite construction of a golf club head including a plurality of laminated wooden layers and a plurality of resin impregnated fiber layers provided between said wooden layers characterized in that each of said wooden layers is provided with engagement surfaces for interengaging with other wooden layers. The engagement surfaces includes a plurality of tongue-and-groove surfaces in the direction perpendicular to the direction of the stroke.
    Type: Grant
    Filed: June 7, 1984
    Date of Patent: November 26, 1985
    Inventor: Chin-San You