Abstract: A heat shrinkable polymer material is particularly adapted for implanted biomedical use. A polycrystalline polymer is irradiated to produce crosslinking of its intramolecular structure to thereby impart viscoelasticity. The material is biocompatible and suitable for implanted use, from the standpoints of very low toxicity, ability to retain structural integrity and being non-carcinogenic and, moreover, is heat shrinkable at a temperature compatible with such implanted use.
Type:
Grant
Filed:
February 1, 1985
Date of Patent:
June 24, 1986
Assignees:
The Johns Hopkins University, University of Maryland
Inventors:
Hou-Ching Yang, Joseph Silverman, John J. Wozniak
Abstract: A method of fabricating a very small-size gate on a semiconductor substrate includes covering the substrate with a photoresist layer, masking an area of the photoresist layer that has a size exceeding the desired size of the gate, subjecting the photoresist layer to overexposure so that the size of the unaffected area is reduced to the desired size, removing the overexposed region of the photoresist layer, providing a protective coating on such region, clearing the unaffected photoresist material out of the area occupied thereby, and depositing gate material at least in the thus obtained recess. The gate material may be deposited over the protective coating, in which case the zone at which the gate is to remain is protected by unexposed photoresist material and the remainder of the gate material is removed from the protective coating.
Type:
Grant
Filed:
January 6, 1984
Date of Patent:
June 25, 1985
Assignee:
International Telephone and Telegraph Corporation