Abstract: A method for improving package bonding between multi-level interconnection lines and low K inter-metal dielectric is provided. The present invention includes the steps of forming a trench between each pair of interconnection lines on one level of multi-level interconnection lines, and then filling the trench with an oxide dielectric material, instead of the low K inter-metal dielectric having a K value smaller than 3 filled therein before the trench formation. Since the oxide dielectric material has a K value higher than the low K inter-metal dielectric, the oxide dielectric is hard enough to resist the force of the package bonding. Accordingly, the relibility of bondability between the multi-level interconnection lines and the low K inter-metal dielectric is enhanced.