Abstract: Disclosed is a method of producing a multicomponent nanopattern having a regular array and allowing a variety of combinations of compositions by depositing a film including a multicomponent material on a substrate having a prepattern formed thereon and then conducting ion-etching thereon twice. The method can be utilized in a variety of applications requiring considerably regularly arranged multicomponent nanostructures such as transistors, organic optoelectronic devices, catalysts and gas sensors.

Abstract: A substrate process station includes a housing including a transport region and process region. The process station further includes a magnetic levitation assembly disposed in the transport region configured to levitate and propel a substrate carrier. The magnetic levitation assembly includes a first track segment including first rails disposed in the transport region and below the process region, wherein the first rails each include a first plurality of magnets. The process station further includes a pedestal assembly comprising a pedestal disposed within the housing. The pedestal is moveable between a pedestal transfer position and a process position, wherein the pedestal is disposed between the first rails in the pedestal transfer position to receive a substrate from the substrate carrier, and wherein the pedestal is moveable between the first rails to position the received substrate in the process region in the process position.

Abstract: A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displaceable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.

Abstract: The invention relates to a diaphragm assembly of an aperture diaphragm for delimiting the coating region which is operative in the deposition of a layer and to a sputtering device which uses the diaphragm assembly. The diaphragm assembly comprises a main part (13) which has a passage (14) delimited by a passage edge. The aim of the invention is to design the diaphragm opening to be temporally and geometrically variable in situ. This is achieved in that the diaphragm assembly has at least one diaphragm plate (17, 17?, 17?) which is assembled on the main part (13) so as to be movable in front of the passage (14) and back. The diaphragm assembly additionally comprises a movement device which is operatively connected to the diaphragm plate (17, 17?, 17?) in order to carry out the movement thereof.

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Abstract: A method for decorating a surface of a mechanical part including: taking the mechanical part to be decorated, on which a decoration element is sought to be produced; depositing on the surface a masking layer having a thickness that is at least equal to the thickness of the decoration element to be produced; making, in the masking layer, at least one cavity that coincides with the location on the surface to be decorated, the cavity having a contour that corresponds to the contour of the decoration element and defining a volume; depositing a bonding layer made of an electrically-conductive material on top of the masking layer and on the surface, in the locations of the cavity, to facilitate the bonding of the decoration element; filling the volume delimited by the masking layer and the surface with a filling material in which the decoration element; and removing the masking layer.

Abstract: Multi-layer metal or pseudometallic materials having engineered anisotropy are disclosed. The multi-layer materials having defined engineered grain orientations in each layer of the multi-layer material and bond layers between adjacent layers orthogonal to the grain orientations. This configuration distributes applied stress across the plurality of layers in the multi-layer metal material and around a neutral axis of the multi-layer metal material and increases the overall mechanical properties of the disclosed multi-layer metal material relative to conventional wrought metal materials of the same or similar chemical constitution. The microstructure of each layer, group of layers, or across multiple layers may be tailored to the intended application of a device made from the material. Individual layers may be tuned for property variations, such as gradients, or to adjust the bond layer characteristics.

Abstract: A film-forming device includes: a chamber in which a mold is to be housed for shearing work; a support disposed in the chamber, the support being configured to support the mold with a hole of the mold being open in a vertical direction; and an evaporation source disposed in the chamber, the evaporation source having an evaporation surface from which metal ions are to be generated. The evaporation source is installed such that the evaporation surface is directed in a prescribed direction which is tilted with respect to a horizontal direction, and in the prescribed direction in which the evaporation surface is directed, part of an inner peripheral surface of the hole of the mold is located.

Abstract: Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate.

Abstract: A sputtering target includes a first target part and a second target part both including a metal oxide and adjacent to each other and a target dividing part disposed between a first target part and a second target part. The target dividing part includes a same metal element as a metal element included in a first target part and a second target part. Therefore, size and/or length of the sputtering target may be increased. Thus, efficiency of a manufacturing process of the sputtering target is improved and a manufacturing cost is reduced. In addition, even after a thin film is deposited on a target substrate using the sputtering target, stains caused by sputtering of non-uniform amounts of metal elements by location on the target substrate do not occur on a target substrate. In addition, the uniformity of a thin film deposited on a target substrate is secured by using the sputtering target. Thus, process quality of a sputtering process is improved.

Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 ?m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

Abstract: Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

Abstract: An apparatus and method to produce a waveform. The apparatus includes a first node, at least one switch that couples a second node to the first node, and responsive to the at least one switch being closed, a peak voltage is produced at the first node before a voltage at the first node drops by a voltage step. A power supply is coupled to the first node to produce, after the voltage step, a ramped voltage at the first node.

Abstract: A pulsed power system and a pulsed power sputtering system are disclosed. The pulsed power system includes a first power source that is configured to apply a first voltage at a first power lead that alternates between positive and negative relative to a second power lead during each of multiple cycles. A second power source is coupled to a third power lead and the second power lead, and the second power source is configured to apply a second voltage to the third power lead that alternates between positive and negative relative to the second power lead during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second power lead during another portion of each cycle.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 m?·cm or less.

Abstract: A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply.

Abstract: A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

Abstract: In one aspect, a system for depositing a film on a substrate is disclosed, which comprises at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive species. The system further includes an inner cooling cylinder and a substrate cylinder, where the inner cooling cylinder is fixedly positioned relative to the substrate cylinder, and the substrate cylinder at least partially surrounds the inner cooling cylinder. At least one mount is coupled to the substrate cylinder for mounting one or more substrates to the substrate cylinder.

Abstract: A method of forming a particle trap on a sputtering chamber component comprises forming a first pattern on at least a portion of a surface of the sputtering chamber component to form a first patterned top surface, and forming a second pattern on at least a portion of the first patterned top surface.