Patents Examined by John J Brayton
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Patent number: 11913108Abstract: A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0° at all times.Type: GrantFiled: February 25, 2021Date of Patent: February 27, 2024Assignee: FHR ANLAGENBAU GMBHInventors: Sven Häberlein, Andreas Vogt, Roland Maudrich
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Patent number: 11846015Abstract: An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 ?m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 ?m or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.Type: GrantFiled: July 26, 2019Date of Patent: December 19, 2023Assignee: JX Metals CorporationInventors: Hideyuki Takahashi, Yoshimasa Koido
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Patent number: 11802349Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.Type: GrantFiled: September 10, 2020Date of Patent: October 31, 2023Assignee: Applied Materials, Inc.Inventors: Zihao Yang, Mingwei Zhu, Nag B. Patibandla, Yong Cao, Shumao Zhang, Zhebo Chen, Jean Lu, Daniel Lee Diehl, Xianmin Tang
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Patent number: 11692262Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.Type: GrantFiled: July 16, 2020Date of Patent: July 4, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Alexander Jansen, Keith A. Miller, Prashanth Kothnur, Martin Riker, David Gunther, Emily Schooley
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Patent number: 11658016Abstract: A shield encircles a sputtering target that faces a substrate support in a substrate processing chamber. The shield comprises an outer band having a diameter sized to encircle the sputtering target, the outer band having upper and bottom ends, and the upper end having a tapered surface extending radially outwardly and adjacent to the sputtering target. A base plate extends radially inward from the bottom end of the outer band. An inner band joined to the base plate at least partially surrounds a peripheral edge of a substrate support. The shield can also have a heat exchanger comprising a conduit with an inlet and outlet to flow heat exchange fluid therethrough.Type: GrantFiled: May 10, 2019Date of Patent: May 23, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Kathleen Scheible, Michael Allen Flanigan, Goichi Yoshidome, Adolph Miller Allen, Cristopher Pavloff
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Patent number: 11628459Abstract: The present invention relates to a device for processing a component, comprising: a travel carriage having a frame which defines an axis of translation along which the travel carriage is translationally movable, a bogie which is relatively rotatably connected to the frame and to which the component is attachable, a first translation-permanent magnet device which is mounted on the frame and having permanent magnets, a rotation-permanent magnet device attached to the bogie and having permanent magnets, and a carriage-side longitudinal guide means mounted on the frame, a stationary travel carriage guide device having a guide-side longitudinal guide means, a first electromagnet translation device with electromagnets which magnetically interact with the permanent magnets of the first translation-permanent magnet device, a first rotation-electromagnet device having electromagnets which magnetically interact with the permanent magnets of the rotation-permanent magnet device, and a controller connected to the first tType: GrantFiled: November 9, 2017Date of Patent: April 18, 2023Assignee: SCIA SYSTEMS GMBHInventors: Daniel Haustein, Sybille Martin, Matthias Nestler, Michael Zeuner
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Patent number: 11629400Abstract: A sputtering target according to an embodiment of the present invention includes: a plate-shaped target body formed of a metal material. The target body includes a target portion and a base portion. The target portion has a sputtering surface. The base portion has a cooling surface and includes a gradient strength layer, the cooling surface being positioned on a side opposite to the sputtering surface and having hardness higher than that of the sputtering surface, the gradient strength layer having tensile strength that gradually decreases from the cooling surface toward the target portion.Type: GrantFiled: May 16, 2019Date of Patent: April 18, 2023Assignee: ULVAC, INC.Inventors: Akira Nakamura, Hisashi Iwashige, Seiya Nishi, Hideto Nagashima, Koji Suzuki
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Patent number: 11618943Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion, a target disposed on the central portion, a plurality of recesses formed in the support portion; and a plurality of self-retained low-friction pads partially disposed in the plurality of recesses, wherein each of the plurality of low-friction pads includes a solid body portion, and a self-retaining stem that extends outward from a bottom of the solid body portion, wherein the self-retaining stem includes a first stem portion disposed in the first through-hole portion, and a second stem portion disposed within the second through-hole portion.Type: GrantFiled: October 23, 2020Date of Patent: April 4, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Ilya Lavitsky, Keith A. Miller
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Patent number: 11615941Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.Type: GrantFiled: February 19, 2019Date of Patent: March 28, 2023Assignee: Advanced Energy Industries, Inc.Inventors: Victor Brouk, Daniel J. Hoffman, Daniel Carter
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Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
Patent number: 11600477Abstract: Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.Type: GrantFiled: December 14, 2020Date of Patent: March 7, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Kirankumar Neelasandra Savandaiah, Shane Lavan, Sundarapandian Ramalinga Vijayalakshmi Reddy, Randal Dean Schmieding, Yong Cao -
Patent number: 11566320Abstract: The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio PIR=INi/IW·(AW+Ax)/ANi of 0.40 or greater, wherein INi is the intensity of the (111) peak of Ni, IW is the intensity of the (110) peak of W, Aw is the fraction of W in the target in atom %, Ax is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, ANi is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-Kalpha radiation.Type: GrantFiled: November 24, 2020Date of Patent: January 31, 2023Assignee: Materion Advanced Materials Germany GmbHInventors: Markus Schultheis, Martin Schlott
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Patent number: 11532468Abstract: Objects of the present invention consist in achievement of both of elongation of life of a sputtering target as well as uniformity of a thickness of a resulting thin coating layer formed on a substrate during the period. The present invention provides a sputtering target comprising a target material, which is characterized in that the target material has a sputtering surface having a first area placed at the center, which is circular and flat; and a second area placed outside of the first area and concentrically with the first area, which has a ring shape, wherein the first area is positioned at a location lower than that of the second area by 15% of thickness of the second area at most, and the first area has a diameter which is ranging from 60% to 80% of a circumferential diameter of the sputtering surface.Type: GrantFiled: January 20, 2015Date of Patent: December 20, 2022Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Mikio Takigawa, Toshiaki Kuroda
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Patent number: 11512389Abstract: Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator.Type: GrantFiled: December 13, 2019Date of Patent: November 29, 2022Assignee: SAMSUNG ELECTRONINCS CO., LTD.Inventors: Keewon Kim, Daehan Kim, Minkyung Lee
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Patent number: 11450516Abstract: The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.Type: GrantFiled: August 5, 2020Date of Patent: September 20, 2022Assignee: Honeywell International Inc.Inventors: Marc D. Ruggiero, Stephane Ferrasse, Frank C. Alford, Susan D. Strothers, Patrick K. Underwood
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Patent number: 11414746Abstract: A film forming apparatus includes a base material support mechanism configured to rotate a base material supported by the base material support mechanism about a first axis, and a first cathode portion on which a target in a cylindrical shape containing a film forming material is mounted and configured to rotate the target about a second axis, in a chamber. The second axis is disposed at a position skewed with respect to the first axis.Type: GrantFiled: June 26, 2019Date of Patent: August 16, 2022Assignee: CANON KABUSHIKI KAISHAInventors: Kazuya Demura, Takamasa Horie, Hiroyuki Kobayashi
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Patent number: 11404254Abstract: An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket.Type: GrantFiled: February 6, 2019Date of Patent: August 2, 2022Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Shreyansh Patel, Graham Wright, Daniel Alvarado, Klaus Becker, Daniel R. Tieger, Stephen Krause
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Patent number: 11396695Abstract: Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.Type: GrantFiled: November 23, 2020Date of Patent: July 26, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsuan-Chih Chu, Chien-Hsun Pan, Yen-Yu Chen, Chun-Chih Lin
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Patent number: 11390520Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.Type: GrantFiled: May 25, 2018Date of Patent: July 19, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Tsez-Chong Tsai, Shuen-Liang Tseng, Szu-Hsien Lo, Po-Wen Yang, Ming-Jie He
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Patent number: 11377724Abstract: In accordance with various embodiments, an electron beam evaporator can comprise the following: a tubular target; an electron beam gun for producing at least one vapor source on a removal surface of the tubular target by means of an electron beam; wherein the removal surface is a ring-shaped axial end surface or a surface of the tubular target that extends conically or in a curved fashion from the free end edge.Type: GrantFiled: February 23, 2018Date of Patent: July 5, 2022Assignee: VON ARDENNE ASSET GMBH & CO. KGInventors: Ekkehart Reinhold, Joerg Faber
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Patent number: 11377726Abstract: A method of making a sputtering target in which an atomized powder including, in at. %, 10 to 50% of B, 0 to 20% in total of one or more elements selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Ru, Rh, Ir, Ni, Pd, Pt, Cu, and Ag, and a balance of one or both of Co and Fe, and unavoidable impurities is provided. Fine particles are removed from the atomized powder to obtain a powder having a particle distribution where the cumulative volume of particles having a particle diameter of 5 ?m or less is 10% or less, and the cumulative volume of particles having a particle diameter of 30 ?m or less is 5-40%. The obtained powder is sintered to form a sputtering target comprising a sintered body. The sputtering target comprises hydrogen of 20 ppm or less.Type: GrantFiled: August 6, 2020Date of Patent: July 5, 2022Assignee: Sanyo Special Steel Co., Ltd.Inventors: Hiroyuki Hasegawa, Noriaki Matsubara