Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract: To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/m3 to 191 kJ/m3.

Abstract: A two-dimensional nano-sheet that is foldable in response to a surrounding pH value includes a polyethyleneimine (PEI) chain taking a two-dimensional form; and a plurality of domains made of gold, attached to the PEI chain, the plurality of domains of gold forming a percolating gold film on the PEI chain.

Abstract: A racetrack-shaped apparatus for generating a magnetic field on a target surface for magnetron sputtering, comprising on a magnetic base (a) a vertically magnetized center permanent magnet arranged straight; (b) vertically magnetized peripheral permanent magnets surrounding the center permanent magnet; (c) vertically magnetized first intermediate permanent magnets, horizontally magnetized second intermediate permanent magnets and vertically magnetized third intermediate permanent magnets arranged on both sides of the center permanent magnet; and (d) vertically magnetized fourth intermediate permanent magnets arranged separately from both longitudinal ends of the center permanent magnet; each second intermediate permanent magnet being arranged with one magnetic pole opposing a near-target side surface portion of each first intermediate permanent magnet.

Abstract: A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga.

Abstract: A copper alloy sputtering target having a composition comprising 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu and unavoidable impurities, wherein a compositional variation in a plane of the sputtering target is within 20%. The present invention provides a copper alloy sputtering target capable of forming a semiconductor element wiring material, particularly a stable and uniform seed layer which is free of aggregation during copper electroplating, and which has superior sputter deposition properties, and a semiconductor element wiring formed using the copper alloy sputtering target.

Abstract: A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube.

Abstract: In one aspect, a system of depositing a film on a substrate is disclosed, which includes at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive ionic species. The system further includes a pair of inner and outer concentric cylinders, where the outer cylinder has first and second openings positioned relative to the metallization source and the reactive source to allow entry of the metal atoms and the reactive ionic species into a metallization region and a reaction region, respectively, between the two cylinders. At least one mount is coupled to the inner cylinder for mounting the substrate thereto such that said substrate is in radiative thermal communication with the inner surface of the outer cylinder, said inner cylinder being rotatable for moving the substrate between the two regions so as to expose the substrate alternatingly to said metal atoms and said reactive ionic species.

Abstract: A film formation apparatus includes a chamber that is a sealed container in which a target formed of a film formation material is placed, and into which the workpiece is carried, a gas discharging unit discharging a gas in the sealed container for a predetermined time period after the workpiece is carried into the chamber to obtain a base pressure, and a sputter gas introducing unit introducing a sputter gas containing oxygen to the interior of the chamber having undergone the discharging and becoming the base pressure. The sputter gas introducing unit decreases an oxygen partial pressure in the sputter gas to be introduced in the chamber in accordance with an increase in the base pressure due to an increase of the film formation material sticking to the interior of the chamber.

Abstract: A fixing unit fixes a plate-shaped member to a fixing base member. The fixing unit includes: a pressing unit configured to press the plate-shaped member toward the fixing base member; and a plurality of positioning units, installed at the fixing base member to be in contact with side surfaces of the plate-shaped member, and configured to place the plate-shaped member with respect to the fixing base member. Each of the positioning units includes: a shaft to be installed at the fixing base member; and a slide part movable along the shaft, and the slide part includes a contact part to be in contact with one of the side surfaces of the plate-shaped member and a clearance part formed on the contact part to have a smaller width than that of the contact part.

Abstract: Apparatus and a method for creation and maintenance of a closed field system in which magnetrons and/or magnet assemblies are provided in a form to create a magnetic field around an area in which a substrate to be coated is located. The method also relates to the steps of cleaning the substrates and applying an adhesive layer prior to the material which is to form the coating.

Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

Abstract: A technique for forming a material including nanotwinned silver crystals in solid solution with a solute that exhibits enhanced strength and desirable electrical conductivity, as compared to coarse-grained material. Synthesis of nanotwinned silver alloy material is achieved by cooling of a substrate and co-deposition of silver and the solute. Controlling the processing conditions of synthesis allows for tailoring of the nanostructure and mechanical properties of the nanotwinned silver alloy material. A material including nanotwinned silver crystals in solid solution with a solute also is described.

Abstract: There is provided a sputtering apparatus in which a holding body holding a substrate by facing a target in a processing chamber is covered by a deposition preventive plate including a substrate retainer for covering a peripheral edge part of the substrate, and a thin film made of metal is deposited on a surface of the substrate exposed to an inside of the deposition preventive plate. A stopper protrusion protrudes at a portion in which the holding body and the deposition preventive plate face each other from one part to the other part, and face the holding body or the deposition preventive plate at a smaller interval than the interval between the deposition preventive plate and the substrate retainer.

Abstract: A process for producing a coated glass, the process comprising, a) providing a glass substrate, b) depositing a chemical vapour (CVD) deposited coating on at least one surface of the glass substrate to produce a CVD coated glass, and c) sputter depositing a further coating on the surface of the CVD coated glass, wherein the further coating comprises at least three reflective metal layers.

Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

Abstract: According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage.

Abstract: A cathode assembly is provided in which, while preventing the occurrence of abnormal electric discharging between a projected portion of a backing plate and a side surface of a target, particles can be prevented from being generated. The cathode assembly for a sputtering apparatus of this invention has: a target made of an insulating material; a backing plate bonded to one surface of the target; and, where such a side of the backing plate as is on the side of the target is defined as a lower side, an annular shield plate disposed to lie opposite to the lower side of that projected portion of the backing plate which is projected outward beyond an outer peripheral end of the target. The cathode assembly has a bonding portion arranged to be protruded relative to the projected portion.

Abstract: In-line metallizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metallized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metallized one or more parts to the conveyor system.

Abstract: An Ag alloy sputtering target of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities. In addition, an Ag alloy film of the present invention includes, as a composition, 0.1 at % to 3.0 at % of Sn, 1.0 at % to 10.0 at % of Cu, and a balance of Ag and inevitable impurities.