Abstract: An I/O compression apparatus, for testing a memory array and/or a logic circuit, is comprised of a selectable compression circuit that outputs compressed test data from the memory array/logic circuit. An I/O scan register is coupled to each I/O pad for converting serial data to parallel and parallel data to serial in response to a test mode select signal, a test data input, and a test clock.

Abstract: A semiconductor memory device including a plurality of banks, each including a plurality of memory cells, a pattern signal generator configured to generate pattern signals having combinations in response to an input signal applied through an arbitrary pad in a compression test mode. Input paths are configured to transfer the plurality of pattern signals to the corresponding banks.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Detecting brown-out in a system having a non-volatile memory (NVM) includes loading data in the NVM, wherein a next step in loading is performed on a location in the NVM that is logically sequential to an immediately preceding loading. A pair of adjacent locations include one with possible data and another that is empty. Determining which of the two, if at all, have experienced brownout includes using two different sense references. One has a higher standard for detecting a logic high and the other higher standard for detecting a logic low. Results from using the two different references are compared. If the results are the same for both references, then there is no brownout. If the results are different for either there has been a brownout. The location with the different results is set to an invalid state as the location that has experienced the brownout.

Abstract: A test mode control circuit of a semiconductor memory device includes an input unit configured to input test mode data for at least one of a plurality of test modes, and a test mode controlling unit configured to enable/disable a test mode according to the number of inputs of the test mode data.

Abstract: A semiconductor integrated circuit includes a clock generator for generating a second clock signal having a frequency that varies over time by using a first clock signal having a fixed frequency, a test circuit for generating a digital signal according to a difference between a first frequency corresponding to the first clock signal and a second frequency corresponding to the second clock signal by a digital logic operation based on the first clock signal and the second clock signal, and a signal path for outputting the digital signal generated by the test circuit.

Abstract: Provided is a CAN system that can generate an error signal without requiring hardware for generating an error signal to be connected to a bus. A protocol processing part within a CAN controller incorporates error data into receive data or send data, based on error data information stored in a register.

Abstract: A test apparatus compares bits included in a data sequence read from a DUT with expectation values. Comparison results are stored in a first failure memory (FM) as bit information indicating whether storage cells of the DUT are non-defective. The storage device counts the number of bits not matching the expectation values for each page, and judges for each grade/page of the DUT whether the number of bits not matching the expectation values meets the condition of that grade. Judgment results are stored in a second FM as page information indicating whether each page is non-defective for each grade. If page information of a page including a bit corresponding to a storage cell indicating that this page meets the condition of any grade is stored in the second FM, the apparatus outputs the bit information in the first FM, by changing it to a value indicating that storage cell is as non-defective.

Abstract: A test circuit can use a simple test pattern data without customization for each substrate and considerably reduce a test preparation process. A connection test circuit is generated by receiving the input of the data of the connection relation indicating the devices mutually line-connected among a plurality of devices, the number of connection lines corresponding to the respective connection relations, and the device outputting a test result, sequentially searching for a connection destination device from the output terminal of an output device, and embedding a test circuit module in a test route.

Abstract: Improved responses can be generated to scan patterns (e.g., test patterns) for an electronic circuit designs having timing exception paths by more accurately determining the unknown values that propagate to observation points in the circuit, where the response is captured. For instance, the responses are determined more accurately by analyzing the effect of sensitizing a timing exception path during each time frame associated with a scan pattern. Path sensitization can be determined based on observing whether values injected at starting points of the timing exception paths due to signal transitions and glitches propagate to their end points. The response can be updated by masking the affected end points and propagating unknown values further in the circuit to determine whether they are captured at observation points of the circuit. For instance, the methods and systems described herein may result in reduced unknowns, improved test coverage and test compression.

Abstract: An integrated apparatus for testing image devices is disclosed, in which a plurality of testing apparatuses needed when an image-related device is installed are integrated into one construction for thereby achieving a good portability as compared to a conventional art in which a plurality of testing apparatuses such as a multi-meter, a portable monitor, a communication tester, etc. are separately needed.

Abstract: A system for processing errors in a processor comprising, an error counter, a pass counter, and a processing portion operative to determine whether a first error is active, increment an error counter responsive to determining that the first error is active, increment the pass counter responsive to determining that all errors have been checked, and clear the error counter responsive to determining that the pass counter is greater than or equal to a pass count threshold value.

Abstract: Logic circuitry has a test point to detect a signal about a delay fault propagating on a logic path between an input terminal and an output terminal, the test point being coupled to the logic path, wherein the test point includes a delay component to delay timing to detect the signal about a delay fault propagating on the logic path by predetermined time.

Abstract: A memory hub device with test logic is configured to communicate with memory devices via multiple hub device ports, and is also configured to communicate on one or more busses in an upstream and downstream direction. The test logic includes a built-in self test apparatus providing logic to simultaneously and independently test the memory devices interfaced to one or more of the hub device ports using read and write data patterns. The test logic also includes configuration registers to hold fault and diagnostic information, and to initiate one or more tests. The memory hub device can further include command collision detection logic, a trace array, buffer transmit mode logic, trigger logic, clock adjustment logic, transparent mode logic, and a configured command sequencer, as well as additional features.

Abstract: A method of testing a proximity communication system for voltage margin by impressing a voltage upon the data link between the transmitter on one chip and the receiver on the other chip coupled to the transmitter through a capacitively coupling circuit formed by juxtaposed capacitor pads on the respective two chips. The impressed voltage is varied and the output of the receiver is monitored to determine an operational voltage margin. The floating inputs on the receiver may be continuously biased by connecting them to variable biasing supply voltages through high impedances. When the floating inputs are periodically refreshed to a refresh voltage during a quiescent data period, the refresh voltage is varied between successive refresh cycles. The variable test voltage may be applied to transmitter output when it is in a high-impedance state, and the output of the receiver is measured.

Abstract: A test system for performing a test of a device is provided that comprises a source file of a test plan that describes a program for performing a test, and one or more of elements that are formed in a unit that divides the source file into one or more blocks. The test system further comprises an annotatable object that, when debugging of objects of the source file is performed, manages modification details of the debugging with reference to an element corresponding to a portion where the debugging is performed, and a controller that, after the debugging, rewrites the source file with details after the debugging is performed on an element basis based on the element and the annotatable object.

Abstract: Described embodiments provide for end-of-life (EOL) checking for NAND flash devices. An exemplary implementation of a computing environment comprises at least one NAND data storage device operative to store one or more data elements. In the illustrative implementation, the EOL data processing and storage management paradigm allows for the storage of data according using a selected EOL enforcement algorithm that can utilize current and/or historical correction levels. The NAND data storage EOL checking module can be operable to cooperate with one or more NAND data store components to execute one or more selected EOL operations to protect stored data.

Abstract: A method for detecting disturb phenomena between neighboring blocks in non-volatile memory includes, sequentially erasing and writing test data (pattern) to each block of a plurality of blocks under test in the non-volatile memory at a first time point, dividing the plurality of blocks under test into a first block group and a second block group based on ordinal number included in each block of the plurality of blocks under test, reading data from each block of the first block group at a second time point, and comparing the data with the test data written at the first time point to generate a first detecting result, and determining applicability of each block of the first block group based on the first detecting result.

Abstract: It is an object to provide a semiconductor storage apparatus managing system for implementing a semiconductor storage apparatus which can be actually utilized in place of a hard disk apparatus. A semiconductor storage apparatus managing system SY for managing an apparatus lifetime of a semiconductor storage apparatus 10 having a semiconductor memory area 15 for storing data and a defective block substituting area 16 for substituting a defective block in the semiconductor memory area 15,includes a storage apparatus side controller 12 for detecting the number of consumed blocks in the defective block substituting area 16 and a host side controller 31 for predicting the apparatus lifetime of the semiconductor storage apparatus 10 based on a result of the detection and giving a notice of a result of the prediction.

Abstract: The present invention provides a method and system for improving memory testing efficiency, raising the speed of memory testing, detecting memory failures occurring at the memory operating frequency, and reducing data reported for redundancy repair analysis. The memory testing system includes a first memory tester extracting failed memory location information from the memory at a higher memory operating frequency, an external memory tester receiving failed memory location information at a lower memory tester frequency, and an interface between the first memory tester and the external memory tester. The memory testing method uses data strobes at the memory tester frequency to clock out failed memory location information obtained at the higher memory operating frequency. In addition, the inventive method reports only enough information to the external memory tester for it to determine row, column and single bit failures repairable with the available redundant resources.