Patents Examined by John S. Heyamn
  • Semiconductor memory device with high speed write operation
    Patent number: 5247482
    Abstract: A dynamic RAM for performing high speed write operation after performing read operation. The inventive device receives write data after pre-charging and equalizing a pair of bit lines, by using a equalization signal activated for a predetermined time, at a time point at which a write enabling signal begins to be activated. Provided between the bit lines is an equalization circuit having an NMOS transistor of which gate is connected to the equalization signal depending on the write enabling signal.
    Type: Grant
    Filed: June 28, 1991
    Date of Patent: September 21, 1993
    Assignee: SamSung Electronics Co., Ltd.
    Inventor: Myoung-Ho Kim