Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract: Methods for improved separation of ions from an ion trap employing a combination of low pressure and low amplitude ion excitation, including methods for removing, from an ion trap ion population, ions having a m/z value neighboring that of an ion of interest, mass spectrometry methods providing improved resolution of ion detection, and programmable apparatus programmed with instructions therefor.

Abstract: A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.

Abstract: The present invention provides a charged particle beam irradiating apparatus capable of simply preventing unevenness or reduction in a peripheral portion of the dose distribution of a charged particle beam. A charged particle beam irradiating apparatus includes scanning electromagnets that scan a charged particle beam and a control device that controls the operations of the scanning electromagnets. In the charged particle beam irradiating apparatus, the control unit changes a scanning speed when the charged particle beam is irradiated along an irradiation line such that a peripheral portion of the dose distribution of the charged particle beam is corrected.

Abstract: A method of operating a focused ion beam device for emitting during operation a focused ion beam including ions of a gas generated at a first partial pressure, comprising cleaning an emitter tip positioned in an emitter tip region of the focused ion beam device, the cleaning comprises introducing the gas into the emitter tip region such that the gas has a second partial pressure of at least two times the first pressure. Further, a focused ion beam device is provided, comprising a gas field emitter tip (13) in an emitter tip region emitting an ion beam including ions of a gas, a gas inlet for supplying a gas with different pressures (110), a gas outlet (120), a pressure measurement device for measuring the pressure in the emitter tip region and a control unit (130) for controlling switching between an operation mode and a cleaning mode, further controlling the pressures in the emitter tip region and being connected to the pressure measurement device.

Abstract: The present invention is directed to an electron beam crossbar switch for interconnection between communication units. The crossbar switch includes an array of electrically charged particle emitter source devices with an input connected to a slow wave structure coupled to the emitter source. An array of detectors is positioned relative to the array of emitter devices for receiving charged particles from various of the emitter devices. X and y deflection means are positioned adjacent each of the emitters for directing the charged particles from each of the emitters to at least one of the detectors to provide more signal output and a reduction in deflection accuracy.

Abstract: One embodiment of this fastening apparatus comprises a body with a passage through its length, a threaded member, a locking member, and a bowed ring. The threaded member is retained by the locking member in the passage. The bowed ring is disposed on the body and is configured to be flexible. This body may be fabricated of graphite in one instance.

Abstract: It is facilitated in a scanning electron microscope to save the labor of executing the reproduction test, conduct basic analysis on a problem caused in execution of the automatic observation process, and confirm details resulting in the error. Upon detecting an error from an abnormality, the scanning electron microscope extracts a sample image lm(t2) obtained by retroceding from a sample image lm(te) stored so as to be associated with time te of error occurrence by a predetermined video quantity (for example, total recording time period t2) previously set and registered by an input-output device, from sample images stored in a recording device while being overwritten, and stores a resultant sample image in another recording device.

Abstract: One embodiment relates to an apparatus using electrons for inspection or metrology of a semiconductor substrate. The apparatus includes an electron source, electron lenses, scan deflectors, an objective electron lens, a collection electron lens, a pin-hole filter, de-scan deflectors, and a detector. The collection electron lens is configured to focus the secondary electrons so as to form a secondary electron beam which is focused at a conjugate focal plane, and the pin-hole filter is positioned at the conjugate focal plane. The de-scan deflectors are configured to controllably deflect the secondary electrons so as to counteract an influence of the scan deflectors such that a center portion of the secondary electron beam passes through the filter and a remainder portion of the secondary electron beam is filtered out by the filter. Other embodiments and features are also disclosed.

Abstract: The present disclosure includes an electron beam emitter, a roller for a web, circumferential radiation shielding, a reaction chamber, movement between open and closes positions, a depositor, baffles, inert gas dispenser, and other features. One example in the present disclosure is a web carrying roller for electron beam irradiation of the web on one side of that roller within a baffle-containing shielded area, while another side of that roller is outside of the shielded area, and near the two ends of the roller are arcuate tongue and groove barriers to x-radiation leakage from the shielded area. The baffle-containing shielded area has a series of voids separated by walls, rather than having the shielded area positioned close to the circumference of the cylinder along its length.

Abstract: One embodiment of this fastening apparatus comprises a cap with a passage through the length of the cap. This cap is received by the upper panels of a body. The embodiments of this fastening apparatus may have two or more upper panels that form a recess. The body also has a lower region with a passage. The upper panels are flexible and can translate to retain the cap within the recess. A threaded member is disposed in the passage of the body. This cap may be fabricated of graphite in one instance.

Abstract: When writing element shapes of a fine pattern on a substrate applied with a resist by scanning an electron beam thereon, ON/OFF control is performed for emitting the electron beam at a predetermined rotational position of the substrate by a blanking-OFF signal, performing writing in a rotational direction of the substrate along with the rotation of the substrate, and terminating the writing by a blanking-ON signal based on write data to perform writing for one round, and repeating the writing based on the ON/OFF control by moving the electron beam or substrate in a radial direction of the substrate and rotation control is performed for controlling the rotation speed of the rotation stage so as to be increased for inner track writing and decreased for outer track writing inversely proportional to the radius of the writing position.

Abstract: Methods for improved separation of ions from an ion trap employing a combination of low pressure and low amplitude ion excitation, including methods for removing, from an ion trap ion population, ions having a m/z value neighboring that of an ion of interest, mass spectrometry methods providing improved resolution of ion detection, and programmable apparatus programmed with instructions therefor.

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Abstract: An ion detector includes an ion input face, a Faraday cup, an ion-to-electron converter dynode, two ion deflection electrodes, an electron multiplier portion, and an anode. The ion input face is formed with an ion input opening. The Faraday cup has an ion collection surface that confronts the ion input opening. The ion-to-electron converter dynode is disposed to one side with respect to the Faraday cup and the ion input opening and has a conversion surface that converts impinging ions into electrons. The two ion deflection electrodes generate an electron lens that attracts and focuses ions from the ion input opening toward the conversion surface of the ion-to-electron converter dynode. The electron multiplier portion receives and multiplies the electrons from the ion-to-electron converter dynode, and includes a plurality of dynodes that multiply electrons one after the other. The plurality of dynodes are juxtaposed in an arc-shape around the Faraday cup.

Abstract: In a SEM it is desirable, in given circumstances, to acquire an image of the sample (14) by means of Auger electrons extracted from the sample and traveling back through the bore of the objective lens (8) in the direction opposing the direction of the primary beam. It is know to separate extracted electrons from the primary beam by positioning Wien filters (32, 34) in front of the objective lens (8), the filters being energized in such a way that they do not cause deflection of the primary beam but do not deflect the secondary electrons. This technique cannot be used for Auger electrons, considering their high energy and hence much stronger fields in the Wien filters, thus causing substantial imaging aberrations in the primary beam.

Abstract: A calibration mask having a plurality of marks previously formed thereon is loaded, and a deflector is used to control deflection of electron beams so that the electron beams are incident on a mark of the calibration mask. The electron beams, having passed through the mark, impinge on a first Faraday cup having a first mark and on a second Faraday cup having a second mark. Then, positional coordinates on an XY stage are detected when electrical quantities detected by the Faraday cups are largest. The positional coordinates on the above mentioned XY stage are detected for each of the marks of the calibration mask. Then, according to the positional coordinates on the XY stage detected in this manner and a difference in height between the marks, the inclination of the electron beams is calculated for the position input to each mark of the calibration mask. Thus, the inclination of electron beams can be accurately measured.

Abstract: A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes.

Abstract: An ion source including an electron generating chamber and an ionization chamber adjacent the electron generating chamber and having an opening therebetween. The ionization chamber has a gas inlet opening and the electron generating chamber has a outlet. The gas inlet opening, the outlet and the opening between the two chambers are all on a common axis. The electron generating chamber has therein a cathode filament which extends completely around the axis and generates electrons, electrodes for directing the electrons transversely toward the axis and a deflection electrode for deflecting the electron flow along the axis and into the ionization chamber. An accelerator plate is adjacent the outlet and is adapted to attract ions generated in the ionization chamber along the axis and through the outlet.

Abstract: Variable space charge effects in the imaging portion of a particle beam projection system due to variations in transmitted beam current are compensated with an additional lens appropriately positioned within the imaging system and having a focal length which varies in response to the transmitted beam current.