Abstract: A mode-locked laser injects pulses of minority carriers into a semiconductor sample. A microwave frequency comb is then generated by the currents formed in the movement of majority carriers native to the semiconductor and the injected minority carriers. These carriers move to cause dielectric relaxation in the sample, which can be used to determine carrier density within the sample. Measurements require close proximity of transmitter and receiver contacts with the sample and may profile a semi-conductor with a resolution of approximately 0.2 nm.
Abstract: Fiber feedthrough device (50), for forming a hermetic seal around optical fibers in a flat fiber group (60) with a group width. The device comprises a slotted member and a base (62). The base defines a hole (65) that extends entirely through the base along a feedthrough direction (X), and is adapted to accommodate the slotted member. The slotted member (52) defines first and second surfaces (53) on opposite sides associated with the feedthrough direction, and a side surface (55, 56) facing transverse to the feedthrough direction. The slotted member comprises a slot (58), which extends along the feedthrough direction through the slotted member, and opens into the first and second surfaces and into a longitudinal opening (59) along the side surface. The slot extends transversely into the slotted member up to a slot depth at least equal to the fiber group width.
Type:
Grant
Filed:
December 27, 2016
Date of Patent:
June 26, 2018
Assignee:
Mapper Lithography IP B.V.
Inventors:
Johannes Petrus Sprengers, Christiaan Otten
Abstract: The present invention provides an improved ion implantation method and an ion implantation apparatus for performing the improved ion implantation method, belongs to the field of ion implantation technology, which can solve the problem of the poor stability and uniformity of the ion beam of the existing ion implantation apparatus. The improved ion implantation method of the invention comprises steps of: S1, detecting densities and beam distribution nonuniformities under various decelerating voltages; S2, determining an operation decelerating voltage based on the beam densities and the beam distribution nonuniformities; and S3, performing an ion implantation under the determined operation decelerating voltage. The present invention ensures the uniformity and stability of the ion beam, and thus ensures the uniformity of performances of the processed base materials in each batch or among various batches.
Abstract: The present disclosure relates to sterically hindered alkyl amine and sterically hindered oxyalkyl amine compounds, as well as particles, substrates, coatings, and articles including the same.
Type:
Grant
Filed:
December 14, 2015
Date of Patent:
June 19, 2018
Assignee:
3M INNOVATIVE PROPERTIES COMPANY
Inventors:
Thomas P. Klun, Mark A. Roehrig, Joseph C. Spagnola, Alan K. Nachtigal, Charles J. Hoy, Richard J. Pokorny, William J. Hunt, Jason T. Petrin, Paul B. Armstrong, Suresh S. Iyer
Abstract: A support for an electron microscope sample includes a body defining a void for receiving a first micro-electronic device, and a first gasket positioned about the first surface. The first gasket further defines an arm extending at an angle away from a horizontal extending through the first micro-electronic device. In operation, the first micro-electronic device is installed onto the first gasket and the arm engages an outer facing side of the first micro-electronic device to grip the first micro-electronic device.
Type:
Grant
Filed:
November 23, 2016
Date of Patent:
June 12, 2018
Assignee:
Protochips, Inc.
Inventors:
Daniel Stephen Gardiner, Franklin Stampley Walden, II, John Damiano, Jr.
Inventors:
Brian Stonecipher, Craig Lester, R. Paul Mounce, Eva Stump, Michel D. Arney, Maxwell Franklin Bischoff, Laurie Martin Burns, Gregg Allen Flender, Barbara Hartigan, Gaurav Rohatgi, Bryce George Rutter, Megan Marie Rutter, Kristin Leigh Sjo-Gaber