Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming an Si-containing resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability because of high rate of etching with fluorine. A film-forming composition, for example, including a polymer of Formula (E1) and a solvent.

Abstract: An ultrahigh strength cold-rolled steel sheet and a manufacturing method thereof are provided. An ultrahigh strength cold-rolled steel sheet, according to a preferred aspect of the present invention, comprises, in percentage by weight: C: 0.25 to 0.4%; Si: 0.5% or less (excluding 0); Mn: 3.0 to 4.0%; P: 0.03% or less (excluding 0); S: 0.015% or less (excluding 0); Al: 0.1% or less; Cr: 1% or less (excluding 0); Ti: 48/14*[N] to 0.1% or less; Nb: 0.1% or less (excluding 0); B: 0.005% or less (excluding 0); N: 0.01% or less (excluding 0); and a balance of Fe and unavoidable impurities, and a microstructure includes 90% or more (including 100%) of martensite, and one or two kinds of 10% or less (including 0%) of ferrite and bainite.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition includes a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: An exposure mask is provided. The exposure mask includes a plurality of pattern blocks for defining a plurality of pattern profiles. Each pattern block includes a plurality of pattern units having mask patterns, and the mask patterns are formed in an asymmetric arrangement. The exposure mask may be a binary exposure mask for forming pattern profiles with curved surfaces.

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent, and metal-containing particles containing a metal atom, in which the number of metal nanoparticles contained in the metal-containing particles and having a particle size of 0.5 to 17 nm is 1.0×101 to 1.0×109 particles/cm3, based on the number of the particles per unit volume of the liquid chemical.

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition including a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

Abstract: A pellicle assembly includes a pellicle membrane and a conformal coating on an outer surface of the pellicle membrane. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. The conformal coating is intended to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.

Abstract: The objective of one aspect of the present invention is to provide: a thick steel plate having high strength and high toughness without carrying out accelerated cooling using water cooling, in the manufacturing, by means of a thermomechanical control process (TMCP), of a thick steel having a thickness of 15 mmt and over; and a method for manufacturing the same.

Abstract: Provided is a tempered martensitic steel having a low yield ratio and an excellent uniform elongation, the tempered martensitic steel: comprising, by wt %, 0.2-0.6% of C, 0.01-2.2% of Si, 0.5-3.0% of Mn, 0.015% or less of P, 0.005% or less of S, 0.01-0.1% of Al, 0.01-0.1% of Ti, 0.05-0.5% of Cr, 0.0005-0.005% of B, 0.05-0.5% of Mo, 0.01% or less of N, and the balance of Fe and inevitable impurities; having a yield ratio of 0.4-0.6; having a product (TS*U-El), of a tensile strength and a uniform elongation, of 10,000 MPa % or more; and having a microstructure containing, by an area fraction, 90% or more of tempered martensite, 5% or less of ferrite and the balance of bainite.

Abstract: A method of manufacturing a semiconductor device includes forming a multilayer photoresist stack over a substrate, in which the multilayer photoresist stack has a first photoresist layer and a second photoresist layer over the first photoresist layer, and the second photoresist layer is less reactive to hydrogen than the first photoresist layer, exposing the multilayer photoresist stack to an EUV radiation, and developing the exposed multilayer photoresist stack.

Abstract: A method of operating a manufacturing platform includes moving a substrate through the manufacturing platform using one or more transfer modules. A dry resist is deposited on the substrate using a resist deposition module of the manufacturing platform. The substrate is examined for distortion with a metrology system that is part of a transfer module. The dry resist is exposed to UV or EUV radiation using an exposure tool of the manufacturing platform. Exposed or unexposed portions of the dry resist are removed using an etch module of the manufacturing platform.

Abstract: A method of manufacturing a photo mask includes determining an enhancement region, in a simulation zone, of a layout pattern of a photo mask. The method includes determining a stitching mobility zone inside the simulation zone, determining an optimization mobility zone inside the stitching mobility zone, and performing an inverse lithographic transformation (ILT) operation of the layout pattern in the simulation zone to generate an ILT adjusted layout pattern in the simulation zone. The method includes combining a weighted sum of the ILT adjusted layout pattern and the layout pattern in the simulation zone to generate an enhanced layout pattern of the photo mask in the simulation zone using a first weighting function inside enhancement region, a second weighting function between boundaries of the enhancement region and the optimization mobility zone, and a third weighting function between boundaries of the optimization mobility zone and the stitching mobility zone.

Abstract: Disclosed methods employ acid generator components in an underlayer. Acid generated by the acid generator components diffuses into an overlying layer, e.g., a photoresist layer, and provides acid which chemically alters the photoresist, e.g., alters the solubility of the photoresist in a developer solution. The acid that diffuses into the overlying photoresist layer increases the concentration and the uniformity of concentration of the acid in lower portions of the photoresist. The regions of increased acid concentration within the photoresist can increase the photoresists solubility in developer solutions, thereby reducing inadequate development of the photoresist. Reducing inadequate development of the photoresist can reduce the amount of photoresist residue or scum that remains after development is complete.

Abstract: A method for the production of a flat steel product including at least the following steps, completed in a continuous process: providing a flat steel product, wherein a protective metal layer of Zn, a Zn—Al alloy, a Zn—Mg alloy or a Zn—Mg—Al alloy is applied to at least one side by hot dip coating; at least partly removing a native oxide layer present on the surface of the protective metal layer by wetting this surface with an acidic solution of sulfuric acid, sulfurous acid, hydrochloric acid, phosphoric acid, phosphonic acid, nitric acid, formic acid, oxalic acid, acetic acid, citric acid, malic acid, tartaric acid, nitrous acid or hydrofluoric acid; activating the surface of the protective metal layer by applying an aqueous activation solution to the surface of the protective metal layer; and phosphating the activated surface of the protective metal layer by applying an aqueous phosphating solution to the activated surface.

Abstract: Provided are: a photosensitive resin composition including a dye containing a mixture of (A-1) a compound represented by a particular chemical formula and a shell surrounding same, (A-2) a compound represented by another particular chemical formula and a shell surrounding same, and (A-3) a compound represented by still another particular chemical formula and a shell surrounding same; a photosensitive resin film prepared using the composition; a color filter including the photosensitive resin film; and a display device including the color filter.

Abstract: A positive photosensitive resin composition for a low-temperature process includes an alkali-soluble phenolic resin, a compound with quinonediazide group, a mixed solvent and at least one additive. The mixed solvent includes a first solvent and a second solvent. The first solvent has a volatilization rate of more than 50 relative to a volatilization rate of butyl acetate of 100, and the second solvent has a boiling point between 150° C. and 200° C. The at least one additive has a molecular weight of 500-5000 and a structural unit as Formula (I), wherein R1 is selected from a group consisting of hydrogen, hydroxyl group, C1-C5 alkyl group, phenyl group, halogen atoms and cyano group, R2 is selected from a group consisting of hydrogen, acid radical, benzene and derivatives thereof, phenols, benzoic acid and derivatives thereof and aromatic heterocycles, and n is 10-80.

Abstract: Production of a lens member includes: a step of positioning a lens member having a first surface, which is a convex optical surface, and a second surface, which is an optical surface facing the first surface, in a predetermined attitude; a step of recognizing surface shape data of the first surface using a dimensional measurement result of the first surface of the positioned lens member; and a step of irradiating the first surface of the lens member with laser light to perform laser processing on the first surface, and controlling an irradiation position of the laser light based on the surface shape data.

Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.