Abstract: Provided is a curable water-based composition including water, a polymerizable compound (A), and a polymerization initiator (C). The polymerizable compound (A) contains an acrylamide compound (A1) represented by General formula (A1) below. In the General formula (A1), X represents an alkylene group containing from 1 through 6 carbon atoms, and Y represents a group represented by General formula (A1a) below or General formula (A1b) below, In the General formula (A1a), R1 represents an alkyl group containing from 1 through 10 carbon atoms, and * represents a bonding site with X, In the General formula (A1b), R1 represents an alkyl group containing from 1 through 10 carbon atoms, and * represents a bonding site with X.

Abstract: A press hardening method including: A. providing a steel sheet for heat treatment, being optionally precoated with an aluminum-based pre-coating, B. deposition of a hydrogen barrier pre-coating comprising chromium and not comprising nickel over a thickness from 10 to 550 nm, C. cutting the precoated steel sheet to obtain a blank, D. heat treating the blank at a furnace temperature from 800 to 970° C., during a dwell time from 1 to 12 minutes, in an atmosphere having an oxidizing power equal or higher than that of an atmosphere consisting of 1% by volume of oxygen and equal or smaller than that of an atmosphere consisting of 50% by volume of oxygen, and having a dew point between ?30 and +30° C., E. transferring the blank into a press tool, F. hot-forming at a temperature from 600 to 830° C. to obtain a part, G. cooling the part.

Abstract: Provided are a compound represented by a specific chemical formula, a photosensitive resin composition including same, a photosensitive resin film prepared using the photosensitive resin composition, a color filter including the photosensitive resin film and a CMOS image sensor including the color filter.

Abstract: A mask for extreme ultraviolet lithography is provided. The mask for extreme ultraviolet lithography comprises: a reflective structure comprising a plurality of unit layers laminated on a substrate and an etch stop layer placed between one pair of adjoining unit layers among the plurality of unit layers and having a trench through which the etch stop layer is exposed; and an absorption pattern placed on the bottom surface of the trench, wherein each of the unit layers comprises a first material layer and a second material layer on the first material layer.

Abstract: A resist composition comprising a quencher and an acid generator is provided. The quencher is a compound having a nitro-substituted aromatic moiety-containing acid labile group and a heterocyclic amine structure in its molecule. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: The composition of the present invention contains a polymer to which there is attached a group represented by the following formula (1): (wherein each of Rx, Sy, and Sz represents a hydrogen atom or a monovalent organic group; each of Ry and Rz represents a single bond or a divalent organic group; each of ring Ary and ring Arz represents a C4 to C20 cyclic alkyl group or a C6 to C30 aryl group, and ring Ary and ring Arz may be linked together to form a new ring structure therebetween; ny is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ary; nz is an integer of 0 to the maximum number corresponding to allowable substitution to ring Arz; and * is a polymer bonding site).

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming an Si-containing resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability because of high rate of etching with fluorine. A film-forming composition, for example, including a polymer of Formula (E1) and a solvent.

Abstract: An ultrahigh strength cold-rolled steel sheet and a manufacturing method thereof are provided. An ultrahigh strength cold-rolled steel sheet, according to a preferred aspect of the present invention, comprises, in percentage by weight: C: 0.25 to 0.4%; Si: 0.5% or less (excluding 0); Mn: 3.0 to 4.0%; P: 0.03% or less (excluding 0); S: 0.015% or less (excluding 0); Al: 0.1% or less; Cr: 1% or less (excluding 0); Ti: 48/14*[N] to 0.1% or less; Nb: 0.1% or less (excluding 0); B: 0.005% or less (excluding 0); N: 0.01% or less (excluding 0); and a balance of Fe and unavoidable impurities, and a microstructure includes 90% or more (including 100%) of martensite, and one or two kinds of 10% or less (including 0%) of ferrite and bainite.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition includes a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

Abstract: An exposure mask is provided. The exposure mask includes a plurality of pattern blocks for defining a plurality of pattern profiles. Each pattern block includes a plurality of pattern units having mask patterns, and the mask patterns are formed in an asymmetric arrangement. The exposure mask may be a binary exposure mask for forming pattern profiles with curved surfaces.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent, and metal-containing particles containing a metal atom, in which the number of metal nanoparticles contained in the metal-containing particles and having a particle size of 0.5 to 17 nm is 1.0×101 to 1.0×109 particles/cm3, based on the number of the particles per unit volume of the liquid chemical.

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition including a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

Abstract: A pellicle assembly includes a pellicle membrane and a conformal coating on an outer surface of the pellicle membrane. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. The conformal coating is intended to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.

Abstract: The objective of one aspect of the present invention is to provide: a thick steel plate having high strength and high toughness without carrying out accelerated cooling using water cooling, in the manufacturing, by means of a thermomechanical control process (TMCP), of a thick steel having a thickness of 15 mmt and over; and a method for manufacturing the same.

Abstract: Provided is a tempered martensitic steel having a low yield ratio and an excellent uniform elongation, the tempered martensitic steel: comprising, by wt %, 0.2-0.6% of C, 0.01-2.2% of Si, 0.5-3.0% of Mn, 0.015% or less of P, 0.005% or less of S, 0.01-0.1% of Al, 0.01-0.1% of Ti, 0.05-0.5% of Cr, 0.0005-0.005% of B, 0.05-0.5% of Mo, 0.01% or less of N, and the balance of Fe and inevitable impurities; having a yield ratio of 0.4-0.6; having a product (TS*U-El), of a tensile strength and a uniform elongation, of 10,000 MPa % or more; and having a microstructure containing, by an area fraction, 90% or more of tempered martensite, 5% or less of ferrite and the balance of bainite.

Abstract: A method of manufacturing a semiconductor device includes forming a multilayer photoresist stack over a substrate, in which the multilayer photoresist stack has a first photoresist layer and a second photoresist layer over the first photoresist layer, and the second photoresist layer is less reactive to hydrogen than the first photoresist layer, exposing the multilayer photoresist stack to an EUV radiation, and developing the exposed multilayer photoresist stack.

Abstract: A method of operating a manufacturing platform includes moving a substrate through the manufacturing platform using one or more transfer modules. A dry resist is deposited on the substrate using a resist deposition module of the manufacturing platform. The substrate is examined for distortion with a metrology system that is part of a transfer module. The dry resist is exposed to UV or EUV radiation using an exposure tool of the manufacturing platform. Exposed or unexposed portions of the dry resist are removed using an etch module of the manufacturing platform.

Abstract: A method of manufacturing a photo mask includes determining an enhancement region, in a simulation zone, of a layout pattern of a photo mask. The method includes determining a stitching mobility zone inside the simulation zone, determining an optimization mobility zone inside the stitching mobility zone, and performing an inverse lithographic transformation (ILT) operation of the layout pattern in the simulation zone to generate an ILT adjusted layout pattern in the simulation zone. The method includes combining a weighted sum of the ILT adjusted layout pattern and the layout pattern in the simulation zone to generate an enhanced layout pattern of the photo mask in the simulation zone using a first weighting function inside enhancement region, a second weighting function between boundaries of the enhancement region and the optimization mobility zone, and a third weighting function between boundaries of the optimization mobility zone and the stitching mobility zone.