Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

Abstract: There is provided a method for fabricating a vertically tapered spot-size converter on a substrate, comprising: growing a waveguide core on the substrate; coating the waveguide core with a photoresist layer; placing a photomask having patterns at a negative focus offset point with respect to the photoresist layer, the patterns being defined by openings in the photomask, each opening having a cross-section comprising a region of constant width and at least one region of non-constant width, the non-constant width reducing in a direction extending away from the region of constant width; transferring the patterns of the photomask to the photoresist layer; providing the waveguide core with a vertically tapered profile, the vertically tapered profile being provided by the patterns of the photomask; growing a cladding layer over the waveguide core; and patterning and etching the cladding layer and the waveguide core, thereby defining the vertically tapered spot-size converter.

Abstract: An aspect of the present disclosure relates to a photosensitive resin composition containing a binder polymer, a photopolymerizable compound, and a photopolymerization initiator, in which the binder polymer includes a structural unit derived from a (meth)acrylate compound having a dicyclopentanyl group, and a weight molecular weight of the binder polymer is 7500 to 23000.

Abstract: A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.

Abstract: A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.

Abstract: A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.

Abstract: There are provided an apparatus and a method for providing a substrate, which can suppress any additional reaction between a developing solution and a photoresist (PR) film and prevent any PR remnants from being generated from such additional reaction. The method includes: supplying an organic developing solution onto a substrate while rotating the substrate at a first revolutions per minute (rpm); substituting the organic developing solution with a nonpolar rinse solution by supplying the nonpolar rinse solution onto the substrate while rotating the substrate at a second rpm, which is lower than the first rpm; continuing to supply the nonpolar rinse solution while rotating the substrate at a third rpm, which is higher than the second rpm; and continuing to supply the nonpolar rinse solution while rotating the substrate at a fourth rpm, which is between the second rpm and the third rpm.

Abstract: In pattern formation method, a photomask is loaded into a lithography apparatus, an exposure light is applied to a photo resist layer formed over a substrate through or via the photomask, and the photo resist layer is developed. The photomask includes a plurality of octagonal shape patterns periodically arranged in a first direction and a second direction crossing the first direction. A width Lx of horizontal sides extending in the first direction of each of the plurality octagonal shape patterns is different from a width Ly of vertical sides extending in the second direction of each of the plurality octagonal shape patterns.

Abstract: One aspect of the ink jet ink set according to the present disclosure is an ink jet ink set including an anionic ink containing an anionic resin, a pigment, and water, and a cationic ink containing a cationic resin, a pigment, and water, in which the anionic ink and the cationic ink are similar colors to each other, the pigment in the anionic ink is coated with the anionic resin, the pigment in the cationic ink is coated with the cationic resin, and the anionic resin or the cationic resin, or both have a urethane-based skeleton or a polyester-based skeleton.

Abstract: Provided are stainless steel for a polymer fuel cell separator and a method of manufacturing the stainless steel, in which a surface modification technique based on wet processing is applied to a surface of stainless steel used for parts such as an anode and a cathode, etc., of a stack that generates electricity, thereby improving corrosion resistance and electric conductivity, and preventing moisture from being formed.

Abstract: Provided is a curable water-based composition including water, a polymerizable compound (A), and a polymerization initiator (C). The polymerizable compound (A) contains an acrylamide compound (A1) represented by General formula (A1) below. In the General formula (A1), X represents an alkylene group containing from 1 through 6 carbon atoms, and Y represents a group represented by General formula (A1a) below or General formula (A1b) below, In the General formula (A1a), R1 represents an alkyl group containing from 1 through 10 carbon atoms, and * represents a bonding site with X, In the General formula (A1b), R1 represents an alkyl group containing from 1 through 10 carbon atoms, and * represents a bonding site with X.

Abstract: A press hardening method including: A. providing a steel sheet for heat treatment, being optionally precoated with an aluminum-based pre-coating, B. deposition of a hydrogen barrier pre-coating comprising chromium and not comprising nickel over a thickness from 10 to 550 nm, C. cutting the precoated steel sheet to obtain a blank, D. heat treating the blank at a furnace temperature from 800 to 970° C., during a dwell time from 1 to 12 minutes, in an atmosphere having an oxidizing power equal or higher than that of an atmosphere consisting of 1% by volume of oxygen and equal or smaller than that of an atmosphere consisting of 50% by volume of oxygen, and having a dew point between ?30 and +30° C., E. transferring the blank into a press tool, F. hot-forming at a temperature from 600 to 830° C. to obtain a part, G. cooling the part.

Abstract: Provided are a compound represented by a specific chemical formula, a photosensitive resin composition including same, a photosensitive resin film prepared using the photosensitive resin composition, a color filter including the photosensitive resin film and a CMOS image sensor including the color filter.

Abstract: A mask for extreme ultraviolet lithography is provided. The mask for extreme ultraviolet lithography comprises: a reflective structure comprising a plurality of unit layers laminated on a substrate and an etch stop layer placed between one pair of adjoining unit layers among the plurality of unit layers and having a trench through which the etch stop layer is exposed; and an absorption pattern placed on the bottom surface of the trench, wherein each of the unit layers comprises a first material layer and a second material layer on the first material layer.

Abstract: A resist composition comprising a quencher and an acid generator is provided. The quencher is a compound having a nitro-substituted aromatic moiety-containing acid labile group and a heterocyclic amine structure in its molecule. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: The composition of the present invention contains a polymer to which there is attached a group represented by the following formula (1): (wherein each of Rx, Sy, and Sz represents a hydrogen atom or a monovalent organic group; each of Ry and Rz represents a single bond or a divalent organic group; each of ring Ary and ring Arz represents a C4 to C20 cyclic alkyl group or a C6 to C30 aryl group, and ring Ary and ring Arz may be linked together to form a new ring structure therebetween; ny is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ary; nz is an integer of 0 to the maximum number corresponding to allowable substitution to ring Arz; and * is a polymer bonding site).

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming an Si-containing resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability because of high rate of etching with fluorine. A film-forming composition, for example, including a polymer of Formula (E1) and a solvent.

Abstract: An ultrahigh strength cold-rolled steel sheet and a manufacturing method thereof are provided. An ultrahigh strength cold-rolled steel sheet, according to a preferred aspect of the present invention, comprises, in percentage by weight: C: 0.25 to 0.4%; Si: 0.5% or less (excluding 0); Mn: 3.0 to 4.0%; P: 0.03% or less (excluding 0); S: 0.015% or less (excluding 0); Al: 0.1% or less; Cr: 1% or less (excluding 0); Ti: 48/14*[N] to 0.1% or less; Nb: 0.1% or less (excluding 0); B: 0.005% or less (excluding 0); N: 0.01% or less (excluding 0); and a balance of Fe and unavoidable impurities, and a microstructure includes 90% or more (including 100%) of martensite, and one or two kinds of 10% or less (including 0%) of ferrite and bainite.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition includes a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.