Abstract: A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.

Abstract: A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.

Abstract: A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.

Abstract: There are provided an apparatus and a method for providing a substrate, which can suppress any additional reaction between a developing solution and a photoresist (PR) film and prevent any PR remnants from being generated from such additional reaction. The method includes: supplying an organic developing solution onto a substrate while rotating the substrate at a first revolutions per minute (rpm); substituting the organic developing solution with a nonpolar rinse solution by supplying the nonpolar rinse solution onto the substrate while rotating the substrate at a second rpm, which is lower than the first rpm; continuing to supply the nonpolar rinse solution while rotating the substrate at a third rpm, which is higher than the second rpm; and continuing to supply the nonpolar rinse solution while rotating the substrate at a fourth rpm, which is between the second rpm and the third rpm.

Abstract: In pattern formation method, a photomask is loaded into a lithography apparatus, an exposure light is applied to a photo resist layer formed over a substrate through or via the photomask, and the photo resist layer is developed. The photomask includes a plurality of octagonal shape patterns periodically arranged in a first direction and a second direction crossing the first direction. A width Lx of horizontal sides extending in the first direction of each of the plurality octagonal shape patterns is different from a width Ly of vertical sides extending in the second direction of each of the plurality octagonal shape patterns.

Abstract: One aspect of the ink jet ink set according to the present disclosure is an ink jet ink set including an anionic ink containing an anionic resin, a pigment, and water, and a cationic ink containing a cationic resin, a pigment, and water, in which the anionic ink and the cationic ink are similar colors to each other, the pigment in the anionic ink is coated with the anionic resin, the pigment in the cationic ink is coated with the cationic resin, and the anionic resin or the cationic resin, or both have a urethane-based skeleton or a polyester-based skeleton.

Abstract: Provided are stainless steel for a polymer fuel cell separator and a method of manufacturing the stainless steel, in which a surface modification technique based on wet processing is applied to a surface of stainless steel used for parts such as an anode and a cathode, etc., of a stack that generates electricity, thereby improving corrosion resistance and electric conductivity, and preventing moisture from being formed.

Abstract: Provided is a curable water-based composition including water, a polymerizable compound (A), and a polymerization initiator (C). The polymerizable compound (A) contains an acrylamide compound (A1) represented by General formula (A1) below. In the General formula (A1), X represents an alkylene group containing from 1 through 6 carbon atoms, and Y represents a group represented by General formula (A1a) below or General formula (A1b) below, In the General formula (A1a), R1 represents an alkyl group containing from 1 through 10 carbon atoms, and * represents a bonding site with X, In the General formula (A1b), R1 represents an alkyl group containing from 1 through 10 carbon atoms, and * represents a bonding site with X.

Abstract: A press hardening method including: A. providing a steel sheet for heat treatment, being optionally precoated with an aluminum-based pre-coating, B. deposition of a hydrogen barrier pre-coating comprising chromium and not comprising nickel over a thickness from 10 to 550 nm, C. cutting the precoated steel sheet to obtain a blank, D. heat treating the blank at a furnace temperature from 800 to 970° C., during a dwell time from 1 to 12 minutes, in an atmosphere having an oxidizing power equal or higher than that of an atmosphere consisting of 1% by volume of oxygen and equal or smaller than that of an atmosphere consisting of 50% by volume of oxygen, and having a dew point between ?30 and +30° C., E. transferring the blank into a press tool, F. hot-forming at a temperature from 600 to 830° C. to obtain a part, G. cooling the part.

Abstract: Provided are a compound represented by a specific chemical formula, a photosensitive resin composition including same, a photosensitive resin film prepared using the photosensitive resin composition, a color filter including the photosensitive resin film and a CMOS image sensor including the color filter.

Abstract: A mask for extreme ultraviolet lithography is provided. The mask for extreme ultraviolet lithography comprises: a reflective structure comprising a plurality of unit layers laminated on a substrate and an etch stop layer placed between one pair of adjoining unit layers among the plurality of unit layers and having a trench through which the etch stop layer is exposed; and an absorption pattern placed on the bottom surface of the trench, wherein each of the unit layers comprises a first material layer and a second material layer on the first material layer.

Abstract: A resist composition comprising a quencher and an acid generator is provided. The quencher is a compound having a nitro-substituted aromatic moiety-containing acid labile group and a heterocyclic amine structure in its molecule. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: The composition of the present invention contains a polymer to which there is attached a group represented by the following formula (1): (wherein each of Rx, Sy, and Sz represents a hydrogen atom or a monovalent organic group; each of Ry and Rz represents a single bond or a divalent organic group; each of ring Ary and ring Arz represents a C4 to C20 cyclic alkyl group or a C6 to C30 aryl group, and ring Ary and ring Arz may be linked together to form a new ring structure therebetween; ny is an integer of 0 to the maximum number corresponding to allowable substitution to ring Ary; nz is an integer of 0 to the maximum number corresponding to allowable substitution to ring Arz; and * is a polymer bonding site).

Abstract: A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming an Si-containing resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability because of high rate of etching with fluorine. A film-forming composition, for example, including a polymer of Formula (E1) and a solvent.

Abstract: An ultrahigh strength cold-rolled steel sheet and a manufacturing method thereof are provided. An ultrahigh strength cold-rolled steel sheet, according to a preferred aspect of the present invention, comprises, in percentage by weight: C: 0.25 to 0.4%; Si: 0.5% or less (excluding 0); Mn: 3.0 to 4.0%; P: 0.03% or less (excluding 0); S: 0.015% or less (excluding 0); Al: 0.1% or less; Cr: 1% or less (excluding 0); Ti: 48/14*[N] to 0.1% or less; Nb: 0.1% or less (excluding 0); B: 0.005% or less (excluding 0); N: 0.01% or less (excluding 0); and a balance of Fe and unavoidable impurities, and a microstructure includes 90% or more (including 100%) of martensite, and one or two kinds of 10% or less (including 0%) of ferrite and bainite.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. The photoresist layer includes a photoresist composition includes a polymer. The polymer includes a monomer unit having a pendant sensitizer and crosslinking group, and a monomer unit having a pendant acid labile group. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: An exposure mask is provided. The exposure mask includes a plurality of pattern blocks for defining a plurality of pattern profiles. Each pattern block includes a plurality of pattern units having mask patterns, and the mask patterns are formed in an asymmetric arrangement. The exposure mask may be a binary exposure mask for forming pattern profiles with curved surfaces.

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent, and metal-containing particles containing a metal atom, in which the number of metal nanoparticles contained in the metal-containing particles and having a particle size of 0.5 to 17 nm is 1.0×101 to 1.0×109 particles/cm3, based on the number of the particles per unit volume of the liquid chemical.

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.