Abstract: A fixing member of solar battery modules for fixing edges of module glass to a roofboard by solar battery modules supporting a first frame body, including: a to-be connected portion to restrict the first frame body from moving upward; a pedestal to restrict the first frame body from moving downward; a portion connecting the pedestal and to-be connected portion to restrict solar battery modules from moving in a direction perpendicular to a longitudinal direction of the first frame body and outwardly along a surface of solar battery modules; and a plate-like portion extending outward farther than one side of the pedestal, the fixing member being fixed to the roofboard through the plate-like portion, supported on both sides of the portion connecting the pedestal and to-be connected portion such that upper surfaces of adjacent solar battery modules are substantially flush with each other, and slidable along the first frame body.

Abstract: A solar cell element and method of manufacturing same is disclosed. A reverse-conductive-type layer is formed on at least one part of a first surface side of a one-conductive-type semiconductor substrate. A conductive layer is formed on the reverse-conductive-type layer. A contact region for electrically connecting the conductive layer and the one-conductive-type semiconductor substrate is formed by heating and melting at least one part of the conductive layer. The solar cell element can be manufactured without conducting complicated treatments, such as removal by etching and re-growing of a silicon thin layer.

Abstract: Methods for fabrication of magnetic write heads, and more specifically to fabrication of magnetic poles and trailing magnetic pole steps. A write pole may first be patterned on a substrate. Then a side gap material may be patterned along sidewall portions of the write pole. Thereafter, a masking layer may be deposited and patterned to expose a portion of the write pole. A trailing magnetic pole step may be formed on the exposed portion of the write pole.

Abstract: A low-index silica coating may be made by forming a silica precursor having a radiation curable composition including a radiation curable monomer and/or a photoinitiator, and also including a silica sol comprising a silane and/or a colloidal silica. The silica precursor may be deposited on a substrate (e.g., glass substrate or silicon wafer) to form a coating layer. The coating layer may then be cured via exposure to electromagnetic radiation, such as UV radiation. Then, the cured coating layer may be fired using temperature(s) of from about 550 to 700° C., in forming the low-index silica based coating. The low-index silica based coating may be used as an antireflective (AR) film on a front glass substrate of a photovoltaic device (e.g., solar cell) in certain example instances.

Abstract: In this presentation, we have shown new methods, devices, and systems, to concentrate the light for the solar cells, using refractive index variations, light funnels, liquid crystals, and other methods and materials. We have shown various methods for enhancing the solar cell efficiency. We have given many variations for each application.

Abstract: An integrated photovoltaic modular panel for a curtain wall glass is used for the field of building integrated photovoltaic. The invention provides the standardized photovoltaic units, so that the electrodes in a photovoltaic panel main body can be internally parallel connected. The connector may be a metal piece of stamping or casting, which has a plug 1 and a socket 2 on both ends, a waist b in the middle, an inward concave straight strip 4 on both sides of the waist, an electrode plug-in socket 3 in the waist for firmly clamping solar cell, a plastic injection molding crust 5 for fixing and securing the connector, forming a module. It can combine with different kinds of glass, forming different kinds of photovoltaic curtain wall glass. The solar cell here may be an amorphous silicon solar cell.

Abstract: A near-field energy conversion method, utilizing a sub-micrometer “near-field” gap between juxtaposed infrared radiation receiver and emitter surfaces, wherein compliant membrane structures, preferably fluid-filled, are interposed in the structure for maintaining uniform gap separation. Thermally resistant gap spacers are also used to maintain uniform gap separation. Means are provided for cooling a receiver substrate structure and for conducting heat to an emitter substrate structure. The gap may also be evacuated for more effective operation.

Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.

Abstract: The present disclosure relates to a method for making a conjugated polymer. In the method, polyacrylonitrile, a solvent, and a catalyst are provided. The polyacrylonitrile is dissolved in the solvent to form a polyacrylonitrile solution. The catalyst is uniformly dispersed into the polyacrylonitrile solution. The polyacrylonitrile solution with the catalyst is heated to induce a cyclizing reaction of the polyacrylonitrile, thereby forming a conjugated polymer solution with the conjugated polymer dissolved therein.

Abstract: A method of making an anti-reflection coating using a sol-gel process, for use in a photovoltaic device or the like. The method may include the following steps in certain example embodiments: forming a polymeric component of silica by mixing silane(s) with one or more of a first solvent, a catalyst, and water; forming a silica sol gel by mixing the polymeric component with a colloidal silica, and optionally a second solvent; forming a metal oxide sol by mixing silane(s) with a metal oxide, a second catalyst, and a third solvent; forming a combined sol by mixing the metal oxide sol with the silica sol; casting the mixture by spin coating or the like to form a silica and metal oxide containing layer on a substrate; and curing and/or heat treating the layer. This layer may make up all or only part of an anti-reflection coating which may be used in a photovoltaic device or the like.

Abstract: A low-index silica coating may be made by forming a silica precursor having a radiation curable composition including a radiation curable monomer and/or a photoinitiator, and also including a silica sol comprising a silane and/or a colloidal silica. The silica precursor may be deposited on a substrate (e.g., glass substrate) to form a coating layer. The coating layer may then be cured via exposure to electromagnetic radiation, such as UV radiation. Then, the cured coating layer may be fired using temperature(s) of from about 550 to 700° C., in forming the low-index silica based coating. The low-index silica based coating may be used as an antireflective (AR) film on a front glass substrate of a photovoltaic device (e.g., solar cell) in certain example instances.

Abstract: A photovoltaic device having a first electrode layer, a high resistivity transparent film disposed on the first electrode, a second electrode layer, and an inorganic photoactive layer disposed between the first and second electrode layers, wherein the inorganic photoactive layer is disposed in at least partial electrical contact with the high resistivity transparent film, and in at least partial electrical contact with the second electrode. The photoactive layer has a first inorganic material and a second inorganic material different from the first inorganic material, wherein the first and second inorganic materials exhibit a type II band offset energy profile, and wherein the photoactive layer has a first population of nanostructures of a first inorganic material and a second population of nanostructures of a second inorganic material.

Abstract: Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In1-xAxN,; wherein: i. 0?x?1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600° C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.

Abstract: A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack.

Abstract: A method for manufacturing a solar cell includes (S1) forming, on a first conductive semiconductor substrate, a second conductive semiconductor layer having an opposite conduction type by means of ion implantation to form a pn junction in an interface thereof; (S2) treating an alkali solution on the second conductive semiconductor layer for texturing; (S3) forming an antireflection film on the textured second conductive semiconductor layer; (S4) forming a front electrode to pass through a partial region of the antireflection film and connect to a part of the second conductive semiconductor layer; and (S5) forming a rear electrode at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween such that the rear electrode is connected to the first conductive semiconductor substrate. The second conductive semiconductor layer, namely an emitter layer, functions as an etch stop layer.

Abstract: Methods, systems and apparatus for a solar cell integrating photovoltaic and thermoelectric cell elements to form a hybrid solar cell. The cell has increased efficiency and longevity by combining operations of the photovoltaic and thermoelectric elements in at least three different modes of operation to increase electrical output per unit of panel area and to increase cell life, improve performance, and provide operational benefits under different environmental conditions.

Abstract: Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.

Abstract: A Photoelectrochemical Photovoltaic Panel (PPP) comprising a number of individual substrates (1) and shared substrates (2), wherein: the substrates are electrical conductors or at least partially coated by an electrical conductor (3); at least one substrate is optically transparent; between the shared substrate (2) and the individual substrates (1) there are Photoelectrochemical Photovoltaic Cells, each comprising a photosensitive electrode, a counter electrode and an electrolyte.

Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.

Abstract: A novel surface texturing provides improved light-trapping characteristics for photovoltaic cells. The surface is asymmetric and includes shallow slopes at between about 5 and about 30 degrees from horizontal as well as steeper slopes at about 70 degrees or more from horizontal. It is advantageously used as either the front or back surface of a thin semiconductor lamina, for example between about 1 and about 20 microns thick, which comprises at least the base or emitter of a photovoltaic cell. In embodiments of the present invention, the shallow slopes are formed using imprint photolithography.