Abstract: An automotive component (20) is manufactured by depositing a non-metallic coating (24) on a surface of a steel blank (26) before hot stamping the steel blank (26). The non-metallic coating (24) is typically applied by physical vapor deposition. The non-metallic coating (24) is formed of one to three layers (32) each having a different composition. The non-metallic coating (24) includes at least one of silicon and carbon, and can also include oxygen, nitrogen, ceramic compounds, and carbides. The total thickness of the non-metallic coating (24) is less than 300 nm. A metallic coating (30) can be applied to the steel blank before the non-metallic coating (24). The non-metallic coating (24) provides numerous advantages, including reduced scaling during the hot stamping process.

Abstract: Articles suitable for use as high-temperature machine components include a substrate and an environmental barrier coating disposed over the substrate, where the environmental barrier coating includes at least one hermetic self-sealing layer formed from a mixture including an alkaline earth metal aluminosilicate and a rare-earth silicate, and where the at least one hermetic self-sealing layer exhibits substantially no net remnant or residual expansion when subjected to high temperature heat treatment. The environmental barrier coating can further include a bondcoat disposed between the substrate and the hermetic self-sealing layer, a topcoat disposed over the hermetic self-sealing layer, and/or an intermediate layer disposed between the hermetic self-sealing layer and the bondcoat. The intermediate layer can include a barrier material that is substantially inert with respect to silica.

Abstract: Provided is a laminate film having a substrate and at least one thin film layer which has been formed on at least one surface of the substrate, in which at least one of the thin film layer contains silicon atoms, oxygen atoms, and carbon atoms.

Abstract: A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants.

Abstract: The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template laye

Abstract: A protective cover for an electrostatic chuck may include a conductive wafer and a plasma resistant ceramic layer on at least one surface of the conductive wafer. The plasma resistant ceramic layer covers a top surface of the conductive wafer, side walls of the conductive wafer and an outer perimeter of a bottom surface of the conductive wafer. Alternatively, a protective cover for an electrostatic chuck may include a plasma resistant bulk sintered ceramic wafer and a conductive layer on a portion of a bottom surface of the plasma resistant bulk sintered ceramic wafer, wherein a perimeter of the bottom surface is not covered.

Abstract: A hot-dip galvanized steel sheet having a good appearance and good adhesion to a coating, the hot-dip galvanized steel sheet having a composition including, on a mass basis: C: 0.20% to 0.50%, Si: 0.1% to 3.0%, Mn: 0.5% to 3.0%, P: 0.001% to 0.10%, Al: 0.01% to 3.00%, and S: 0.200% or less, a remainder being Fe and incidental impurities, wherein the hot-dip galvanized steel sheet includes an internal oxidation layer and a decarburized layer, the internal oxidation layer having a thickness of 4 ?m or less, the decarburized layer having a thickness of 16 ?m or less, and 50% or more by area of the internal oxidation layer is composed of a Si oxide containing Fe and/or Mn represented by Fe2XMn2-2XSiOY, wherein X ranges from 0 to 1, and Y is 3 or 4.

Abstract: Yttria stabilized zirconia (YSZ) particles (40) form a thermal barrier layer (58) on a metal substrate (24). The YSZ particles have a porous interior (52, 54) and a fully melted and solidified outer shell (50). The thermal barrier layer may have porosity greater than 12%, including porosity within the particles and inter-particle gap porosity. Inter-particle gaps may be greater than 5 microns. The thermal barrier layer may exhibit elastic hysteresis and an average modulus of elasticity of 15-25 GPa. A bond coat (44A, 44B) may be applied between the substrate and the thermal barrier layer. The bond coat may have a first dense MCrAlY layer (44A) on the substrate and a second rough, porous MCrAlY layer (44B) on the first MCrAlY layer, the bond layers diffusion bonded to each other and to the substrate.

Abstract: In accordance with one aspect of the present invention, a heating device is presented. The heating device includes a pyrocatalytic, non-stick coating disposed on at least one surface. The pyrocatalytic non-stick coating includes (i) a binder derived from a silane, a polysiloxane, a polysilazane, or combinations thereof; and (ii) a catalyst dispersed within the binder, wherein the catalyst comprises a pervoskite crystalline material, a pyrochlore crystalline material, a spinel crystalline material, an ilmenite crystalline material, or combinations hereof.

Abstract: A lid has a heat conductive substrate, a crystallized amorphous silicon layer and a native silicon oxide layer formed on the crystallized amorphous silicon layer. Another embodiment has a lid with a copper substrate and a native silicon oxide layer connected to the substrate by at least one intermediate layer. A method of providing a heat path through an integrated circuit package includes providing a substrate with an exterior layer of native silicon oxide and interfacing the layer of native silicon oxide with a layer of thermal interface material.

Abstract: Components having an environmental barrier coating and a sintered layer overlying the environmental barrier coating, the sintered layer defining an outer surface having a lower surface roughness than the environmental barrier coating. The sintered layer is formed from a slurry applied to and then sintered on the environmental barrier coating. The sintered layer comprises a primary material, at least one sintering aid dissolved in the primary material, and optionally a secondary material. The sintering aid contains at least one doping composition. The primary material is a rare earth disilicate or a rare earth monosilicate and is doped with the doping composition so as to be either a doped rare earth disilicate or a doped rare earth monosilicate. The optional secondary material is a reaction product of the primary material and any of the sintering aid not dissolved in the primary material.

Abstract: The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.

Abstract: A photovoltaic module and its manufacturing method. The module includes a first support wafer made of sintered silicon and a second layer of single-crystal silicon.

Abstract: There is provided a multilayer coating comprising a plurality of layers comprising a) one or more layers of an elemental transition metal; b) one or more layers of an elemental metalloid; and c) two or more layers of an oxide; characterized in that the transition metal and metalloid layers are between the oxide layers and the plurality of layers does not need to contain an additional transparent conductive film (TCF). The multilayer coatings show high transparency in the visible light range combined with heat shielding without the need of transparent conductive oxide which have been previously used to achieve these properties. The multilayers can be produced with conventional physical vapor deposition methods on glass and polymer substrates. The coatings may therefore be used for applications on windows, plastic sheets and window shields. The invention relates also to the process for making the multilayer coatings, articles comprising them and their use in building and other applications.

Abstract: Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.

Abstract: A ceramic composition of matter includes a solvent material and a solute material. The solvent material comprises zirconia or hafnia, or a mixture thereof, which is stabilized with a stabilizing oxide. The solute material comprises a metal oxide of the formula, XaOb, where X is a metallic element, O is oxygen, and “a” and “b” are stoichiometric coefficients. The difference in density between the solvent material and the solute material is less than about 30%.

Abstract: A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.

Abstract: An article (50; 100) has a metallic substrate (22), a bondcoat (30) atop the substrate, and a thermal barrier coating (28; 27, 28) atop the bondcoat. The thermal barrier coating or a layer thereof comprises didymium oxide and zirconia.

Abstract: Steel strip provided with a hot dip galvanized zinc alloy coating layer, in which the coating of the steel strip is carried out in a bath of molten zinc alloy, the zinc alloy in the coating of: 0.3-2.3 weight % magnesium; 0.6-2.3 weight % aluminum; optional <0.2 weight % of one or more additional elements; unavoidable impurities; the remainder being zinc in which the zinc alloy coating layer has a thickness of 3-12 ?m.