Abstract: A process for depositing a layer of uniform thickness on an uneven surface of a substrate is disclosed. The layer could be deposited by plasma or chemical vapor deposition (CVD). The uneven surface of the substrate has horizontal surfaces and vertical sidewalls and is located on a movable platform. The platform is tilted and rotated as the layer is deposited so that the ions or the flow of chemical vapor reaches the horizontal surface and the sidewall at a similar incident angle. Thereby, the layer is evenly deposited and has a uniform thickness with proper coverage and planarization.