Abstract: Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)(NR2)4 Formula I, M(=O)2(NR2)2 Formula II, and M(=NR)2(OR)2 Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR?3, wherein R? is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Abstract: In a method and a device for generating vapor for a CVD or PVD device, liquid or solid particles of a first source material are fed into a first heat transfer body via a first feed line. The first heat transfer body vaporizes the particles into a first vapor, which is transported by a carrier gas from the first heat transfer body into a second heat transfer body arranged after the first heat transfer body. The first heat transfer body is heated to a first temperature, and the second heat transfer body is heated to a second temperature. Liquid or solid particles of a second source material are fed into a second heat transfer body via a second feed line. The second heat transfer body vaporizes the particles into a second vapor, which is transported along with the first vapor out of the second heat transfer body by the carrier gas.