Patents Examined by Jospeh E. Clawson, Jr.
  • Diode-integrated high speed thyristor
    Patent number: 3978514
    Abstract: A diode-integrated high speed thyristor formed into one body by using a separation region for preventing interference between a thyristor and a diode.
    Type: Grant
    Filed: February 13, 1974
    Date of Patent: August 31, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Takuzo Ogawa, Tsutomu Yatsuo, Keiichi Morita