Abstract: An error reduction circuit for use in arrays of chalcogenide memory and computing devices. The error reduction circuit reduces the error associated with the output response of chalcogenide devices. In a preferred embodiment, the output response is resistance and the error reduction circuit reduces errors or fluctuations in the resistance. The error reduction circuit includes a network of chalcogenide devices, each of which is nominally equivalent and each of which is programmed into the same state having the same nominal resistance. The inclusion of multiple devices in the network of the instant error reduction circuit provides for a reduction in the contributions of both dynamic fluctuations and manufacturing fluctuations to the error in the output response.

Abstract: A differential amplifier having a positive input terminal, a negative input terminal, an output terminal, a bias terminal and a ground terminal is provided. The differential amplifier comprises a differential pair circuit and a current mirror circuit. Wherein, the differential pair circuit is coupled to the positive input terminal, the negative input terminal, the output terminal, and the bias terminal of the differential amplifier. The current mirror circuit receives a constant current from a current source, and mirrors the constant current to the differential pair circuit. The current mirror circuit further connects to the ground terminal of the differential amplifier, and the terminal of the current mirror circuit receiving the constant current is coupled to a first source/drain terminal of a first PMOS transistor. A second source/drain and a gate of the first PMOS transistor are connected to the bias terminal and the output terminal of the differential amplifier, respectively.