Abstract: A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.