Patents Examined by Juni Y. Chang
  • Method of fabricating a MOS read-only semiconductor memory array
    Patent number: 5733795
    Abstract: A method is described for a read-only MOS semiconductor memory. An addressable array of a multiplicity of cells each comprising a single MOS transistor is coded for preselected cells by providing them with source/drain regions which are spaced apart from edges of their respective overlying gate electrode regions. This is accomplished by a masking step late in the fabrication sequence. In this way, a dense MOS memory having rapid manufacturing turn-around is provided.
    Type: Grant
    Filed: April 22, 1996
    Date of Patent: March 31, 1998
    Assignee: Microchip Technology Incorporated
    Inventors: Salvatore Spinella, Gianpaolo Spadini
  • Method and apparatus for the improved microwave deposition of thin films
    Patent number: 5567241
    Abstract: A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material.
    Type: Grant
    Filed: May 16, 1995
    Date of Patent: October 22, 1996
    Assignee: Energy Conversion Devices, Inc.
    Inventors: David V. Tsu, Rosa Young, Stanford R. Ovshinsky
  • Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder
    Patent number: 5487786
    Abstract: There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode and a high frequency application electrode arranged opposite to and parallel to a substrate held by the substrate holding electrode. A material gas introduced between the substrate holding electrode and the high frequency application electrode is decomposed by glow discharge, so that a thin film is deposited on the heated substrate. A first electrode heater for heating a peripheral portion of the high frequency application electrode is installed along the peripheral portion of the high frequency application electrode.
    Type: Grant
    Filed: December 22, 1994
    Date of Patent: January 30, 1996
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Atsushi Chida, Hitoshio Sannomiya, Katsuhiko Nomoto, Hiroshi Okamoto, Yoshihiro Yamamoto