Abstract: A memory device includes a DC conversion circuit that receives a first edge-triggered phase signal having first pulses each extending from a rising edge of a first phase signal of a multiphase clock to a later rising edge of a second phase signal of the multiphase clock and a second edge-triggered phase signal having second pulses each extending from a rising edge of the second phase signal to a later rising edge of the first phase signal, and outputting a first voltage corresponding to the first edge-triggered phase signal and a second voltage corresponding to the second edge-triggered phase signal, a comparator that compares the first voltage with the second voltage, control logic that generates a control code corresponding to an output value from the comparator, and a delay cell that delays the second phase signal according to the control code.

Abstract: An anti-fuse address decoding circuit includes: a pre-decoding circuit, configured to decode a programming address of an anti-fuse memory array and output a programming address pre-decoded signal; a level shift circuit, coupled to the pre-decoding circuit, and configured to boost the programming address pre-decoded signal and output a boosted signal; and a programming address decoding circuit, configured to receive the boosted signal, decode the boosted signal and output a programming address signal.

Abstract: A memory test circuit is provided. The memory test circuit is disposed in a memory chip and electrically coupled to a memory macro of the memory chip. A high speed clock receives an input signal and an external clock signal. The input signal includes a plurality of test bits. A finite state machine controller provides a pattern type. A pattern generator generates and provides a test signal to at least one memory cell of the memory chip to write the test signal to the at least one memory cell based on the pattern type and the external clock signal. A test frequency of the test signal is determined based on the high speed clock. An output comparator outputs a comparison signal based on a difference between the test signal and a readout signal corresponding to the test signal read from the at least one memory cell.

Abstract: There are provided systems and methods that include at least one memory that has a plurality of memory cells. The cells may be disposed in rows and columns. The device can further include a controller that is communicatively coupled to the at least one memory, and the controller may be configured by its hardware topology and its instruction set and/or by a communicatively coupled processor or higher-level system or subsystem to maintain data integrity in the at least one memory and/or to prevent or mitigate malicious access patterns that may compromise the at least one memory. The controller may be configured to execute a deterministic protocol in conjunction with or sequentially to a probabilistic protocol to achieve one or more of the above-noted functions.

Abstract: Methods, systems, and devices for link evaluation for a memory device are described. A memory device may receive signaling over a channel and may identify logic values encoded into the signaling based on sampling the signaling against a reference voltage. The sampling may occur at a reference time within a sampling period. To evaluate a quality (e.g., margin of error) of the channel, the memory device may adjust the reference voltage, the reference time, or both, and either the memory device or the host device may determine whether the memory device is still able to correctly identify logic values encoded into signaling over the channel. In some cases, the channel quality may be evaluated during a refresh cycle or at another opportunistic time for the memory device.

Abstract: Memory controllers, memory devices, memory systems and operation methods are provided. A memory controller is to: find, in input data, a binary code to be replaced corresponding to a preset programming level to be replaced, the input data is to be written into a memory cell; and substitute the binary code to be replaced in the input data with a replacement binary code corresponding to a preset replacement programming level, and generate a replacement identifier linking a memory address corresponding to the replacement binary code. The quantity of states is reduced by modifying a data encoding mode of the memory controller to help shorten programming duration of the memory device and reduce disturbance.

Abstract: A memory includes a peripheral circuit and a memory array. The memory array includes word lines. The peripheral circuit includes a driver, a repeater, and a discharge circuit. An output terminal of the driver is coupled with a controlled terminal of the repeater. An output terminal of the repeater is coupled with a controlled terminal of the discharge circuit. The discharge circuit is coupled with a word line in the memory array. The driver is configured to output a first control signal to the repeater. The repeater is configured to output a second control signal to the discharge circuit according to the first control signal.

Abstract: A memory device includes pages each composed of memory cells arrayed in columns on a substrate. A page write operation of retaining a hole group formed by impact ionization inside a channel semiconductor layer, and a page erase operation of discharging the hole group from the channel semiconductor layer are performed. A first impurity layer is connected to a source line, a second impurity layer to a bit line, a first gate conductor layer to a first selection gate line, a second gate conductor layer to a plate line, a third gate conductor layer to a second selection gate line, and a bit line to a sense amplifier circuit. Page data of a memory cell group selected in at least one page is read to the bit line. Zero volts or less is applied to the plate line of the memory cell connected to an unselected page.

Abstract: Methods, apparatuses, and systems related to operations for memory process feedback. A controller can monitor memory activities, such as processes, identify row hammer aggressors, and perform mitigating steps to the row hammer aggressors. The controller may have a table of addresses of row hammer aggressors and perform operations of tracking row hammer aggressors. The controller can determine whether the number of aggressors reaches a threshold. When the number of aggressors reaches the threshold, the controller can send a message with the aggressor addresses to the operating system. The operating system can perform mitigating steps to the row hammer aggressors. In some embodiments, the controller may identify the row hammer aggressors and inject poisoned data into the process to mitigate the row hammer aggressors.

Abstract: A memory device for CIM, applicable to a 3D AND-type flash memory, includes a memory array, input word line pairs, and a signal processing circuit. The memory array includes first and second pairs of memory cells. Each first pair of memory cells includes a first memory cell set coupled to a first GBL and a second memory cell set coupled to a second GBL. Each second pair of memory cells includes a third memory cell set coupled to the first GBL and a fourth memory cell set coupled to the second GBL. Each input word line pair includes a first input word line coupled to the first and the second memory cell sets, and a second input word line coupled to the third and the fourth memory cell sets s. The signal processing circuit is coupled to the first and second global bit lines.

Abstract: A semiconductor device includes a self-test circuit configured to generate an internal clock having a higher frequency than a clock applied from a device external to the semiconductor device, to generate an instruction signal from a pre-instruction signal extracted through a data line, and to generate an internal control signal from the instruction signal. The semiconductor device also includes a command control circuit configured to generate a test command to perform a self-test for determining whether a defect has occurred in first memory cells and second memory cells based on the internal clock and the internal control signal. The semiconductor device further includes a data control circuit configured to output data stored in the first memory cells based on the test command, and to store data output from the first memory cells in the second memory cells.

Abstract: Dynamic power management for an on-chip memory, such as a system cache memory as well as other memories, is provided. The memory includes wordline sections, input/output (I/O) circuitry, and control circuitry. Each wordline section includes a number of wordlines, and each wordline section is coupled to a different wordline control circuitry. The control circuitry is configured to, in response to receiving an access request including an address, decode the address including determine, based on the address, an associated wordline, and determine, based on the associated wordline, an associated wordline section. The control circuitry is further configured to apply power to wordline control circuitry coupled to the associated wordline section.

Abstract: A semiconductor integrated circuit includes a first control part included in a first region in which a first operation speed is permitted, a second control part included in a second region in which power supply is cut off in a power saving mode and in which an operation at a speed higher than the first operation speed is required, a functional part having a specific function, and a selection part selecting either a first path connecting the first control part and the functional part or a second path connecting the second control part and the functional part in response to a control signal.

Abstract: The memory device includes a chip with circuitry, a plurality of memory blocks, and a plurality of bit lines. The memory blocks include an array of memory cells, and the circuitry either overlies or underlies the array of memory cells. The bit lines are divided into two portions that are electrically connected with one another via at least one transistor so that at least one portion of each bit line can be charged independently of the other portion of the same bit line.

Abstract: Provided is data receiving circuit, data receiving system and memory device. The data receiving circuit includes: first amplification circuit, configured to receive data signal, first reference signal and second reference signal, perform first comparison on the data signal and the first reference signal in response to sampling clock signal and output first signal pair, and perform second comparison on the data signal and the second reference signal and output second signal pair; second amplification circuit, configured to receive enable signal and feedback signal, selectively receive the first signal pair or the second signal pair as input signal pair based on the feedback signal during period in which the enable signal is at first level, receive the first signal pair during period in which the enable signal is at second level, amplify voltage difference of the first signal pair, and output first output signal and second output signal.

Abstract: A memory system includes first and second memory cells, and a controller configured to write data having a first value in the first memory cells and data having a second value in the second memory cells, determine a first voltage by executing a tracking process, and read data from the memory cells using the first voltage. In the tracking process, the controller performs a plurality of read operations to determine a first distribution of the memory cells, estimate a second distribution of the first memory cells based on the first distribution, calculate a third distribution of the second memory cells based on a difference between the first distribution and the second distribution, and determine a voltage that is within the third voltage as the first voltage based on the second distribution and the third distribution.

Abstract: An apparatus for receiving a strobe signal may include an amplifier for amplifying a strobe signal input thereto, an offset generator for controlling the setting of a threshold for detecting a preamble signal by generating an offset for the amplifier, and a preamble detector for detecting a first preamble signal occurring at a point at which the amplified strobe signal is equal to or greater than the threshold and turning off the offset generator when the first preamble signal is detected.

Abstract: An operation method of a memory may include entering a self-refresh mode, increasing a level of a back-bias voltage in response to entering the self-refresh mode, performing self-refresh operations in a first cycle, confirming that the back-bias voltage reaches a level of a first threshold voltage, and performing the self-refresh operations in a second cycle longer than the first cycle in response to the confirmation.

Abstract: A semiconductor storage device of an embodiment includes a plurality of blocks, a voltage supply circuit configured to generate read voltage Vr to be supplied to signal lines, a block decoder capable of setting, for each of the selected blocks, whether the read voltage Vr is applied to word lines, and a sequencer configured to perform operation that reads data. The voltage supply circuit generates power voltage VRD and power voltage VBB that is negative voltage and supplies these voltages to the block decoder. During the reading operation, a value of the power voltage VRD is changed between voltage Vhr and voltage Vlr and a value of the power voltage VBB is changed between voltage Vhb and voltage Vlb. The voltage Vhr is larger than zero volt, and the voltage Vlb is lower than zero volt.

Abstract: Mitigating or managing an effect known as “rowhammer” upon a DRAM device may include a memory controller receiving an activation count threshold value from the DRAM device. The memory controller may detect row activation commands directed to the DRAM device and count the number of the row activation commands. The memory controller may send a mitigative refresh command to the DRAM device based on the result of comparing the counted number of row activation commands with the received activation count threshold value.