Abstract: An unwanted deposited film is removed from the surface of a photomask in which a desired pattern has been formed. Then, a resist film is exposed to extreme ultraviolet radiation through the photomask, from which the deposited film has been removed, thereby transferring the desired pattern onto the resist film.

Abstract: A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.

Abstract: An assist feature for isolated, and semi-dense random contacts, as may be present on a photomask used in photolithographic processes for semiconductor device fabrication, is disclosed. The assist feature can be used in conjunction with off-axis illumination (OAI) for such non-dense contacts, for improving the depth of focus (DOF), resolution, or both of photolithography for such contacts, such that the non-dense contact preferably substantially mimics a dense contact during OAI. A photomask of the invention includes a number of assist features situated near and around the non-dense contact. A method for creating a photomask according to the invention, as well as a method for fabricating a semiconductor device using such a mask, are also disclosed.

Abstract: A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.

Abstract: First and second areas are defined on the substrate. A partial area of a resist film formed on the surface of the substrate is exposed to light having a first intensity, the partial area corresponding to an area above first area, and the light having the first intensity having transmitted through a pattern of a first reticle to be transferred. The resist film above the second area of the substrate is exposed to light having a second intensity weaker than the first intensity. The resist film above the first and second areas is exposed to light having a third intensity weaker than the first intensity, the light having the third intensity having transmitted through a pattern of a second reticle to be transferred. The exposed resist film is developed.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: A method of making electrically conductive bumps of improved height on a semiconductor device. The method includes steps of depositing an under bump metallurgy over a semiconductor device onto a contact pad; depositing and patterning a photoresist layer to provide an opening over the under bump metallurgy; depositing a first electrically conductive material into the opening in the photoresist layer; depositing a second electrically conductive material over the first electrically conductive material; removing the photoresist layer and the excess under bump metallurgy; applying a flux agent to the top surface of the second electrically conductive material; hard baking the semiconductor device to remove any oxide; dipping a portion of the semiconductor device in an electroless plating solution; removing the semiconductor device from the electroless plating solution; and reflowing the electrically conductive materials to provide a bump of improved height on the semiconductor device.

Abstract: A method is disclosed for making deep microstructures in photoresist. The method utilizes a pool of photoresist on top of a transparent substrate and the laser is located below the substrate. Structures are created in the photoresist by transmitting the laser light through the substrate up into the photoresist. Since the photoresist does not have to be spin coated onto the substrate, very thick layers of photoresist can be used while the thickness uniformity is determined by the substrate surface. Alternately, a contoured substrate can be used while producing uniform structures.

Abstract: A conductor pattern is constructed to prevent corners from peeling and raising off a substrate. The conductor pattern has a spiral configuration and includes straight lines and corners connected to the straight lines. The bottom surface cross-sectional width of the conductor pattern is smaller than the top surface cross-sectional width thereof. Moreover, the bottom surface cross-sectional width of the corner is larger than the bottom surface cross-sectional width of the straight line.

Abstract: A MEMS-based optical switch having improved characteristics and methods for manufacturing the same are provided. In accordance with one embodiment, an optical switch includes a single comb drive actuator having a deflecting beam structure and a mirror coupled to the actuator. The mirror is capable of being moved between an extended position interposed between waveguide channels and a retracted position apart from the waveguide channels. The actuator applies a force capable of deflecting the beam structure and moving the mirror to one of the extended positions or the retracted position and the beam structure returns the mirror to the other of the extended position or the retracted position in the absence of the application of force.

Abstract: An etch barrier to be used in a photolithograph process is disclosed. A silicon rich etch barrier is deposited on a substrate using a low energy deposition technique. A diamond like carbon layer is deposited on the silicon rich etch barrier. Photoresist is then placed on this etch barrier DLC combination. To form photolithographic features, successive steps of oxygen and flourine reactive ion etching is used.

Abstract: The invention relates generally to photolithographic techniques, and particularly, but not by way of limitation, to a method for preventing the collapse of the image pattern during the stage of drying the image. The invention also relates to structures fabricated using the inventive method.

Abstract: This invention relates to a method of forming a polymer chain of a desired length in a thin film comprising a monomer having a multiple bond in a desired position. This invention is a method of polymerizing a monomer to form the polymer chain by applying a pulse voltage to the thin film comprising the monomer having a multiple bond in a desired position. The polymer chain may be polymerized to a desired length in a desired position. The pulse voltage, may be applied using the probe of a scanning tunnel microscope. The length of the monomer may be controlled using a defect formed on the above-mentioned thin film as an end point of the polymer chain.

Abstract: In projecting a pattern formed on a mask onto a substrate by using a progressive focus exposure method and transferring/forming an image of the pattern on a substrate, a control unit changes the distribution of energy amounts supplied onto the substrate based on the relative positions of the imaging plane and the substrate surface, and the integrated energy amount supplied onto the substrate in accordance with the position of an irradiation area on the substrate surface which is irradiated with an energy beam through the projection optical system. With this operation, in accordance with information about the distribution of variations in resist layer thickness on the substrate, which is obtained in advance, at least one of the distribution of energy amounts and the integrated energy, which reduce the influences of this distribution, can be changed.

Abstract: A method of forming a pattern by using a photomask having both a minute aperture where a main component of transmitted light is evanescent light and an aperture where a main component of transmitted light is propagating light. The method includes the steps of forming a photoresist having a film thickness at most equal to a width of the minute aperture on a substrate to be processed, exposing the photoresist by incident light for exposure, and adjusting the film thickness of the photoresist and the conditions of the exposure so as to prevent a photoresist pattern made by the propagating light from extending to an adjacent pattern made by the evanescent light.

Abstract: The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.

Abstract: A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH9Si+, C3H9Si+, C3H9Osi− and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.

Abstract: A shielding film is formed on the surface of a substrate and a pair of aperture patterns for light transmission with substantially the same line width are formed in the above shielding film so as to run parallel to each other with a gap and to be isolated from other aperture patterns for light transmission. The exposure amount (exposure energy to sufficiently large aperture pattern) at the time a photoresist is exposed by using this photo mask is 4 or more times and 20 or less times as large as the exposure amount on the border where the photoresist is converted from soluble to insoluble through the exposure or the exposure amount on the border from insoluble to soluble. Thereby, it becomes possible to form a microscopic pattern without using an auxiliary pattern method or a phase shift mask and the default inspection of a mask can be made easy.

Abstract: An alternating phase shift mask (400) and method of manufacturing thereof including assist edges (450) and (452) surrounding a main phase edge (420). Assist edges (450) and (452) improve the resolution of the alternating phase shift mask (400), thus enabling the patterning of smaller size features on a semiconductor wafer.

Abstract: Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material.