Abstract: An unwanted deposited film is removed from the surface of a photomask in which a desired pattern has been formed. Then, a resist film is exposed to extreme ultraviolet radiation through the photomask, from which the deposited film has been removed, thereby transferring the desired pattern onto the resist film.

Abstract: A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.

Abstract: An assist feature for isolated, and semi-dense random contacts, as may be present on a photomask used in photolithographic processes for semiconductor device fabrication, is disclosed. The assist feature can be used in conjunction with off-axis illumination (OAI) for such non-dense contacts, for improving the depth of focus (DOF), resolution, or both of photolithography for such contacts, such that the non-dense contact preferably substantially mimics a dense contact during OAI. A photomask of the invention includes a number of assist features situated near and around the non-dense contact. A method for creating a photomask according to the invention, as well as a method for fabricating a semiconductor device using such a mask, are also disclosed.

Abstract: First and second areas are defined on the substrate. A partial area of a resist film formed on the surface of the substrate is exposed to light having a first intensity, the partial area corresponding to an area above first area, and the light having the first intensity having transmitted through a pattern of a first reticle to be transferred. The resist film above the second area of the substrate is exposed to light having a second intensity weaker than the first intensity. The resist film above the first and second areas is exposed to light having a third intensity weaker than the first intensity, the light having the third intensity having transmitted through a pattern of a second reticle to be transferred. The exposed resist film is developed.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: A method of making electrically conductive bumps of improved height on a semiconductor device. The method includes steps of depositing an under bump metallurgy over a semiconductor device onto a contact pad; depositing and patterning a photoresist layer to provide an opening over the under bump metallurgy; depositing a first electrically conductive material into the opening in the photoresist layer; depositing a second electrically conductive material over the first electrically conductive material; removing the photoresist layer and the excess under bump metallurgy; applying a flux agent to the top surface of the second electrically conductive material; hard baking the semiconductor device to remove any oxide; dipping a portion of the semiconductor device in an electroless plating solution; removing the semiconductor device from the electroless plating solution; and reflowing the electrically conductive materials to provide a bump of improved height on the semiconductor device.

Abstract: A method is disclosed for making deep microstructures in photoresist. The method utilizes a pool of photoresist on top of a transparent substrate and the laser is located below the substrate. Structures are created in the photoresist by transmitting the laser light through the substrate up into the photoresist. Since the photoresist does not have to be spin coated onto the substrate, very thick layers of photoresist can be used while the thickness uniformity is determined by the substrate surface. Alternately, a contoured substrate can be used while producing uniform structures.

Abstract: A conductor pattern is constructed to prevent corners from peeling and raising off a substrate. The conductor pattern has a spiral configuration and includes straight lines and corners connected to the straight lines. The bottom surface cross-sectional width of the conductor pattern is smaller than the top surface cross-sectional width thereof. Moreover, the bottom surface cross-sectional width of the corner is larger than the bottom surface cross-sectional width of the straight line.

Abstract: A method of forming a pattern by using a photomask having both a minute aperture where a main component of transmitted light is evanescent light and an aperture where a main component of transmitted light is propagating light. The method includes the steps of forming a photoresist having a film thickness at most equal to a width of the minute aperture on a substrate to be processed, exposing the photoresist by incident light for exposure, and adjusting the film thickness of the photoresist and the conditions of the exposure so as to prevent a photoresist pattern made by the propagating light from extending to an adjacent pattern made by the evanescent light.