Patents Examined by Kallambella Vijayakumar
  • Patent number: 8200304
    Abstract: A novel Josephson junction and a novel Josephson junction device are provided which eliminates the need to form an insulating barrier layer. The Josephson junction (1) comprises a superconductor layer (2) and a ferromagnetic layer (3) formed on a middle part (2C) of the superconductor layer (2). The ferromagnetic layer (3) may consist of an electrically conductive or insulating ferromagnetic layer, and may be an electrically conductive ferromagnetic layer formed via an insulating layer. With the superconductor layer (2) formed of a high temperature superconductor, a Josephson junction (1) is provided having large IcRN product. The Josephson junction (1) can be used as a junction for a variety of Josephson devices.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: June 12, 2012
    Assignee: Japan Science and Technology Agency
    Inventors: Atsutaka Maeda, Espinoza Luis Beltran Gomez
  • Patent number: 8192649
    Abstract: A method of preparing a capped poly(arylene ether) resin includes reacting a capping agent with a blend of two or more poly(arylene ether) resins having different intrinsic viscosities. Cured compositions prepared from these capped poly(arylene ether) resins exhibit improved balances of stiffness, toughness, and dielectric properties compared to compositions with two or more separately capped and isolated poly(arylene ether) resins.
    Type: Grant
    Filed: April 20, 2007
    Date of Patent: June 5, 2012
    Assignee: Sabic Innovative Plastics IP B.V.
    Inventors: Gary William Yeager, Hua Guo, Zhiqing Lin, Shahid Murtuza
  • Patent number: 8188010
    Abstract: A thin film superconductive wire material (16) and an electro conductive tape (15) are immersed in a solder bath (35) containing a solder, which includes Sn(tin) and Bi (bismuth), to bond the thin film superconductive wire material (16) and the electro conductive tape (15) and a composite superconductive wire material (10) is formed.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: May 29, 2012
    Assignees: The Furukawa Electric Co., Ltd., International Superconductivity Center, The Juridical Foundation
    Inventors: Masashi Yagi, Hirao Hirata, Shinichi Mukoyama, Yuh Shiohara
  • Patent number: 8187710
    Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: May 29, 2012
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Takahiro Matsumoto, Toshiaki Yamada, Hirotaka Tsuruya
  • Patent number: 8185175
    Abstract: A low-cost superconducting coil which can generate a high magnetic field at comparatively high temperature is provided. The superconducting coil is formed in a pancake shape by winding a superconducting conductor that is made by electrically connecting a tape-shaped (Bi,Pb)2223 superconducting wire and a tape-shaped RE123 superconducting wire in series such that the tape-shaped (Bi,Pb)2223 superconducting wire is arranged in the outer circumferential part and the tape-shaped RE123 superconducting wire is arranged in the internal circumferential part.
    Type: Grant
    Filed: April 9, 2008
    Date of Patent: May 22, 2012
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Shinichi Kobayashi
  • Patent number: 8178221
    Abstract: Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45°-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: May 15, 2012
    Inventor: Amit Goyal
  • Patent number: 8173260
    Abstract: The present invention features additions of nano-structures to interconnect conductor fine particles (spheres) to: (1) reduce thermal interface resistance by using thermal interposers that have high thermal conductivity nano-structures at their surfaces; (2) improve the anisotropic conductive adhesive interconnection conductivity with microcircuit contact pads; and (3) allow lower compression forces to be applied during the microcircuit fabrication processes which then results in reduced deflection or circuit damage. When pressure is applied during fabrication to spread and compress anisotropic conductive adhesive and the matrix of interconnect particles and circuit conductors, the nano-structures mesh and compress into a more uniform connection than current technology provides, thereby eliminating voids, moisture and other contaminants, increasing the contact surfaces for better electrical and thermal conduction.
    Type: Grant
    Filed: January 12, 2010
    Date of Patent: May 8, 2012
    Assignee: The Research Foundation of State University of New York
    Inventors: Bahgat Sammakia, Wayne E. Jones, Ganesh Subbarayan
  • Patent number: 8173579
    Abstract: In a fabrication method of a MgB2 superconducting tape and wire by filling a tube with a MgB2 superconducting powder and forming it into a tape or wire, a fabrication method of a MgB2 superconducting tape (and wire) which is characterized by using a MgB2 superconducting powder having a high critical current density (Jc) owing to its lowered crystallinity and having potential for excellent grain connectivity as the MgB2 superconducting powder. Provided are a fabrication method of a MgB2 superconducting tape and wire which can fabricate a MgB2 superconducting tape and wire having a level of Jc sufficiently high for practical applications and homogeneous quality throughout its length by an ex-situ process employing a material of the composition suitable for its working environment as the sheath material, and a MgB2 superconducting tape and wire thereby fabricated.
    Type: Grant
    Filed: October 24, 2006
    Date of Patent: May 8, 2012
    Assignee: National Institute for Materials Science
    Inventors: Takayuki Nakane, Hitoshi Kitaguchi, Hiroki Fujii, Hiroaki Kumakura
  • Patent number: 8173051
    Abstract: There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material.
    Type: Grant
    Filed: September 11, 2009
    Date of Patent: May 8, 2012
    Assignee: Mitsubishi Gas Chemical Co., Inc.
    Inventors: Takahiro Matsumoto, Toshiaki Yamada, Hirotaka Tsuruya
  • Patent number: 8168150
    Abstract: The invention relates to binary, ternary and quaternary lithium phosphates of general formula Li(FexM1yM2z)PO4 wherein M1 represents at least one element of the group comprising Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Be, Mg, Ca, Sr, Ba, Al, Zr, and La; M2 represents at least one element of the group comprising Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Be, Mg, Ca, Sr, Ba, Al, Zr, and La; x=between 0.5 and 1, y=between 0 and 0.5, z=between 0 and 0.5, provided that x+y+z=1, or x=0, y=1 and z=0. The said lithium phosphates can be obtained according to a method whereby precursor compounds of elements Li, Fe, M1 and/or M2 are precipitated from aqueous solutions and the precipitation product is dried in an inert gas atmosphere or a reducing atmosphere at a temperature which is between room temperature and approximately 200° C. and tempered at a temperature of between 300° C. and 1000° C. The inventive lithium phosphates have a very high capacity when used as cathode material in lithium accumulators.
    Type: Grant
    Filed: April 10, 2002
    Date of Patent: May 1, 2012
    Assignee: Zentrum fur Sonnenenergie-und Wasserstoff-Forschung Baden-Wurttenberg, Gemeinnutzige Stiftung
    Inventors: Reinhard P. Hemmer, Giesela Arnold, Christian Vogler, Margret Wohlfahrt-Mehrens
  • Patent number: 8124568
    Abstract: An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: February 28, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Hayashi, Takeshi Araki
  • Patent number: 8126523
    Abstract: Use, as a component with variable inductance which is a function of the current passing through it, of an inductive superconductive component having at least two terminals and comprising at least one line segment working with said terminals and integrating at least one of these terminals, this line segment constituting a conductive or superconductive layer within a stack of films alternately superconductive and insulating.
    Type: Grant
    Filed: January 13, 2006
    Date of Patent: February 28, 2012
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Pierre Bernstein, Jean-François Hamet, Laurence Mechin, Nabil Touitou, Séverine Mouchel
  • Patent number: 8119571
    Abstract: Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
    Type: Grant
    Filed: August 3, 2006
    Date of Patent: February 21, 2012
    Inventors: Amit Goyal, Sukill Kang
  • Patent number: 8114309
    Abstract: A lithium-manganese composite oxide for a lithium ion battery having a good cycle property at high-temperature and battery property of high capacity is provided. A spinel type lithium-manganese composite oxide for a lithium ion battery represented by a general formula: Li1+xMn2-yMyO4 (wherein M is one or more elements selected from Al, Mg, Si, Ca, Ti, Cu, Ba, W and Pb, and, ?0.1?x?0.2, and 0.06?y?0.3), and when D10, D50 and D90 are defined as a particle size at which point the cumulative frequency of volume reaches 10%, 50% and 90% respectively, d10 is not less than 2 ?m and not more than 5 ?M, d50 is not less than 6 ?m and not more than 9 ?m, and d90 is not less than 12 ?m and not more than 15 ?M, and BET specific surface area thereof is greater than 1.0 m2/g and not more than 2.0 m2/g, and the tap density thereof is not less than 0.5 g/cm3 and less than 1.0 g/cm3.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: February 14, 2012
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yoshio Kajiya, Hirohito Sato, Ryuichi Nagase
  • Patent number: 8114526
    Abstract: A composite substrate for superconductors and methods for making the same are described. The composite substrate of the present invention includes at least a core layer having and a sheath layer having a cube texture on at least a portion its surface. In certain embodiments, the core layer can include a nickel-tungsten-molybdenum alloy having about 2-10 atomic percent tungsten and 2-15 atomic percent molybdenum. In some embodiments, the sheath layer can include nickel or a nickel-tungsten alloy having about 0 to 6 atomic percent tungsten. Generally, the core layer is stronger than the sheath layer and an interdiffusion zone can exist between the core layer and the sheath layer.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: February 14, 2012
    Assignee: American Superconductor Corporation
    Inventors: Cornelis Leo Hans Thieme, Elliott D. Thompson
  • Patent number: 8112134
    Abstract: The superconducting current-limiting device contains at least one coil (61), the conductive track of which is formed from at least one band-shaped superconductor (17), where a holding element (2, 41, 10, 51, 62) is located between adjacent coil windings. The holding element (2, 41, 51, 62) is constructed wider than the superconductor (17) in the axial direction of the coil (61). The holding element (2, 41, 51, 62) further includes a flat strip (11) and an undulating strip (12, 42, 52). The flat strip (11) extends essentially parallel to the band-shaped superconductor (17) at an essentially constant distance (22) therefrom. The undulating strip (12, 42, 52) extends essentially parallel to the flat strip (11), and in the longitudinal direction periodically has regions (15, 43, 53) distant from and regions (13) close to the flat strip (11). The regions (13) of the undulating strip (12, 42, 52) near to the flat strip have a mechanical connection (21) to the flat strip (11).
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: February 7, 2012
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Peter Krämer, Manfred Wohlfart
  • Patent number: 8105981
    Abstract: This invention provides a thin superconducting oxide film, which can realize a high critical current, and a superconducting member having a high level of electric power resistance. The superconducting member comprises a sapphire R face substrate, a buffer layer formed of grain lumps of an oxide provided on the sapphire R face substrate, and a superconducting layer provided on the buffer layer. The nearest neighbor distance between oxygen atoms in the oxide and the grain diameter of grain lumps of the oxide have been specified. The superconducting member can be used as a member for superconducting filters.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: January 31, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Mutsuki Yamazaki
  • Patent number: 8088503
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: January 3, 2012
    Assignees: UT-Battelle, LLC, The Regents of the University of California
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N Arendt, Liliana Stan, Stephen R Foltyn
  • Patent number: 8083970
    Abstract: The present invention relates to electroconductive inks and methods of making and using the same. The electroconductive inks include carbon fibrils and a liquid vehicle. The electroconductive ink may further include a polymeric binder. The electroconductive filler used is carbon fibrils which may be oxidized. The ink has rheological properties similar to that of commercially available electroconductive inks that use carbon black as their filler. The ink can be screen-printed, slot-coated, sprayed, brushed or dipped onto a wide variety of substrates to form an electroconductive coating.
    Type: Grant
    Filed: June 16, 2003
    Date of Patent: December 27, 2011
    Assignee: Hyperion Catalysis International, Inc.
    Inventors: Jun Ma, Alan Fischer, Chunming Niu, Lein Ngaw
  • Patent number: 8055318
    Abstract: A new family of superconducting materials with critical temperature up to 55 K have recently been discovered, comprising a crystal structure with atomic layers of iron and arsenic alternating with atomic layers of rare-earth oxide or alkaline earth. The present invention identifies structures for integrated circuit elements (including Josephson junctions) in these and related materials. These superconducting circuit elements will operate at a higher temperature than low-temperature superconductors such as niobium, and may be easier to manufacture than prior-art high-temperature superconductors based on copper-oxides.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: November 8, 2011
    Assignee: Hypres, Inc.
    Inventor: Alan M. Kadin