Abstract: A substrate processing apparatus includes a processing tub configured to perform an etching processing therein by immersing multiple substrates in a processing liquid; a first and second discharge opening groups disposed under the substrates within the processing tub, and configured to discharge the processing liquid into the processing tub; a first adjusting device configured to change a flow rate of the processing liquid discharged from the first discharge opening group; a second adjusting device configured to change a flow rate of the processing liquid discharged from the second discharge opening group; a controller configured to control the first and second adjusting devices to perform, during the etching processing, a flow rate adjusting processing of increasing and decreasing the flow rate of the processing liquid discharged from the first discharge opening group and the flow rate of the processing liquid discharged from the second discharge opening group to different values.

Abstract: Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

Abstract: Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

Abstract: Embodiments of multi-zone showerheads are provided herein. In some embodiments, a multi-zone showerhead includes: a body having an outer surface and including a plurality of fluidly independent plenums; and a plurality of gas distribution plugs extending through the body, wherein at least one gas distribution plug includes a first internal gas passageway coupling a first plenum of the plurality of fluidly independent plenums to the outer surface and a second internal gas passageway coupling a second plenum of the plurality of fluidly independent plenums to the outer surface. In some embodiments, the body can include: a top plate; a bottom plate; and one or more intermediate plates disposed between the top plate and the bottom plate, wherein individual plenums of the plurality of fluidly independent plenums are respectively defined between adjacent plates of the top plate, the bottom plate, and the one or more intermediate plates.

Abstract: A vacuum apparatus includes process chambers, and a transfer chamber coupled to the process chambers. The transfer chamber includes one or more vacuum ports, thorough which a gas inside the transfer chamber is exhausted, and vent ports, from which a vent gas is supplied. The one or more vacuum ports and the vent ports are arranged such that air flows from at least one of the vent ports to the one or more vacuum ports are line-symmetric with respect to a center line of the transfer chamber.

Abstract: Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and the substrate support. The controller is configured monitor the position of the at least one substrate and provide or disable power to the individual plasma sources based on the position of the substrate relative to the individual plasma sources.

Abstract: A semiconductor substrate treatment system includes: a chamber having an internal space defined by a first surface and a second surface of the chamber opposing each other, and a third surface of the chamber connected the first surface and the second surface; a transfer device in a central region of the internal space for transferring a semiconductor substrate; an ionizing device including first and second discharge devices on the second surface for emitting ions having a first polarity and a second polarity, respectively, to charge particles in the internal space with the first and second polarities, and a third discharge device disposed above the transfer device, and configured to emit ions having the first and second polarities together; and first and second dust collecting assemblies on the third surface, facing each other, and configured to collect charged particles by generating electric fields having different polarities.

Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a gas splitter seated on the lid plate. The gas splitter may define a plurality of gas inlets and gas outlets. A number of gas outlets may be greater than a number of gas inlets. The systems may include a plurality of valve blocks that are interfaced with the gas splitter. Each valve block may define a number of gas lumens. An inlet of each of the gas lumens may be in fluid communication with one of the gas outlets. An interface between the gas splitter and each of the valve blocks may include a choke. The systems may include a plurality of output manifolds seated on the lid plate. The systems may include a plurality of output weldments that may couple an outlet of one of the gas lumens with one of the output manifolds.

Abstract: A plasma boat for receiving wafers with partial damping of the plasma deposition comprises a number of boat plates spaced apart in parallel, which are provided with wafer holders for receiving upright wafers, in order to securely hold the wafers during transport and during the depositing process in a coating chamber, and wherein the boat plates are mechanically connected to one another by electrically insulating spacers. This provides a plasma boat, with regulated plasma deposition, which ensures a deposition on wafers that is uniform over the surface area thereof and has a constant layer thickness. This is achieved by a damping element (12) being respectively arranged between the wafer holders (16) located parallel to one another, between adjacent boat plates (15), and electrically insulated with respect to the latter on spacer elements (2).

Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Abstract: A detachable atomic layer deposition apparatus for powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to the shaft sealing device. The vacuum chamber is fixed to one end of the shaft sealing device via at least one fixing member. The driving unit drives the vacuum chamber to rotate via the shaft sealing device to agitate the powders in a reaction space of the vacuum chamber to facilitate the formation of thin films with uniform thickness on the surface of the powders. In addition, the vacuum chamber can be removed from the shaft sealing device for users to take out the powders from the vacuum chamber and clean the vacuum chamber, thereby improving the convenience in usage.

Abstract: System and method for depositing a first layer on a flexible strip-shaped or sheet-shaped substrate and a second layer on the first layer. The system comprises a first deposition unit of a first type which is provided with a first supporting body, a conveying device for conveying the substrate in a conveying direction which extends parallel to a first central line of the first supporting body along the radial outer side of the supporting body. Downstream of the first deposition unit, the system furthermore comprises a second deposition unit which is provided with a second supporting body with a second central line which is in line with the first central line, and a wrapping device for keeping the substrate in a wrapped state, the substrate being wrapped around at least a part of the radial outer sides of the first supporting body and of the second supporting body.

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Abstract: A dry non-plasma treatment system for removing material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract: An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.

Abstract: Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

Abstract: A transport system of the in-line coater moves the substrate holder from chamber to chamber in a direction perpendicular to the axis of its rotation and in each process chamber. The system moves the substrate holder to the working area along its axis of rotation. The process chamber has a cavity the size of which is determined by the dimensions of the substrate holder and is sufficient to place technology devices and monitoring instruments in it. In the first embodiment of the in-line coater, the supporting frame of the transport system on which the substrate holder is cantilevered, is configured to move from the chamber to the chamber both in horizontal and vertical positions. In the second embodiment of the in-line coater the supporting frame is configured to move only in a vertical position, and the in-line coater comprises additionally a substrate holder return chamber.

Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

Abstract: A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.