Patents Examined by Karla A. Moore
  • Patent number: 10381034
    Abstract: Provided is an in-line type film forming apparatus including a processing chamber which is disposed to deviate from a closed path and is connected to a corner chamber, a first loading and unloading unit which unloads a substrate from a carrier and moves the substrate to the inside of the processing chamber, a second loading and unloading unit which unloads the substrate processed in the processing chamber and loads the substrate on the carrier, and a control device which performs control of driving the first and second loading and unloading units to unload the substrate from the carrier and to move the substrate to the inside of the processing chamber, and to take out the substrate processed in the processing chamber in advance from the processing chamber and to load the substrate on the carrier.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: August 13, 2019
    Assignee: SHOWA DENKO K.K.
    Inventors: Seiya Nagai, Satoru Ueno
  • Patent number: 10325800
    Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: June 18, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kulshreshtha, Kwangduk Douglas Lee, Bok Hoen Kim, Zheng John Ye, Swayambhu Prasad Behera, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Jian J. Chen
  • Patent number: 10315233
    Abstract: A flexible substrate treatment device comprising at least one tank that accommodates treatment liquid, winding rollers including a main roller and a driven roller located above the treatment liquid, a positioning roller located in the treating liquid in each tank, a detecting unit configured to detect radius or diameter of at least one of the winding rollers, and a movable discharge member fixed to a side wall of each tank, including a movable discharge port configured to discharge the treatment liquid and a discharge port position controlling mechanism, wherein the movable discharge port can be moved in a direction X perpendicular to a bottom wall of the tank.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: June 11, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Weifeng Zhou
  • Patent number: 10266948
    Abstract: A graphene roll-to-roll coating apparatus and a graphene roll-to-roll coating method are provided on the basis of a continuous process.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: April 23, 2019
    Assignee: Graphene Square Inc.
    Inventors: Byung Hee Hong, Young Jin Kim, Jaeboong Choi, Hyeong Keun Kim, Junmo Kang, Su Kang Bae
  • Patent number: 10269603
    Abstract: A substrate processing apparatus includes a process chamber configured to process a substrate, a carrier mounting part configured to mount a carrier which accommodates the substrate, the substrate capable of being brought into and out of the carrier when a door of the carrier mounted on the carrier mounting part is opened, a carrier opener configured to open and close the door of the carrier mounted on the carrier mounting part, a purge gas supply part configured to supply an inert gas into the carrier with the door kept opened, and a control part configured to perform control so as to carry out at least one inert gas purge among a load purge, an unload purge and a standby purge.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: April 23, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshihiko Nakagawa, Hiroshi Kotani
  • Patent number: 10233542
    Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: March 19, 2019
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Jae Chan Kwak, Sung Kyu Kang, Hun Jung, Byoung Ha Cho
  • Patent number: 10233528
    Abstract: Embodiments of the disclosure provide methods and apparatus for monitoring film properties on a substrate in-situ. In one embodiment, a deposition system is provided. The deposition system includes at least two deposition chambers, and a patterned mask designed specifically for each of the deposition chambers, wherein a first mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, and a second mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, the first opening of the second mask having a position on the second mask that is different than a position of the first opening on the first mask.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: March 19, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: John Macneill White, Robert Jan Visser
  • Patent number: 10229813
    Abstract: In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: March 12, 2019
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Tadayoshi Kawaguchi, Ryoji Nishio, Tsutomu Tetsuka
  • Patent number: 10208381
    Abstract: Embodiments of a reflective surface and a reflector comprising a reflective surface for use in a thermal decomposition reactor are disclosed. Methods for using the reflective surface, or reflector comprising the reflective surface, to manage a temperature profile in a silicon rod grown in the thermal decomposition reactor are also disclosed. The reflective surface is configured to receive radiant heat energy emitted from an energy emitting region of an elongated polysilicon body grown during chemical vapor deposition onto a silicon filament and reflect at least a portion of the received radiant heat energy to a reflected energy receiving region of the elongated polysilicon body or to a reflected energy receiving region of a second elongated polysilicon body, to thereby add radiant heat energy to the reflected energy receiving region.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: February 19, 2019
    Assignee: REC Silicon Inc
    Inventors: Timothy Troutman, Bryan J. Loushin, Joe Ruschetti
  • Patent number: 10202690
    Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: February 12, 2019
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Chul Joo Hwang, Jeung Hoon Han, Young Hoon Kim, Seung Hoon Seo
  • Patent number: 10204831
    Abstract: Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: February 12, 2019
    Assignee: ALTA DEVICES, INC.
    Inventors: Thomas Gmitter, Gang He, Melissa Archer, Andreas Hegedus
  • Patent number: 10204810
    Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A linear transport chamber includes linear tracks and robot arms riding on the linear tracks to linearly transfer substrates along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers. A four-axis robot arm is disclosed, capable of linear translation, rotation and articulation, and z-motion.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: February 12, 2019
    Assignee: Brooks Automation, Inc.
    Inventors: Gee Sun Hoey, Terry Bluck, Hoang Huy Vu, Jimin Ryu
  • Patent number: 10197385
    Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: February 5, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Somesh Khandelwal, Garry K. Kwong, Kevin Griffin, Joseph Yudovsky
  • Patent number: 10187965
    Abstract: A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: January 22, 2019
    Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT, INC. CHINA
    Inventors: Tuqiang Ni, Jinyuan Chen, Qing Qian, Yuehong Fu, Zhaoyang Xu, Xusheng Zhou, Ye Wang
  • Patent number: 10153182
    Abstract: A substrate processing apparatus that performs processing by immersing a substrate into a processing liquid obtained by mixing phosphoric acid with a diluent includes a concentration sensing means for sensing the concentration of the processing liquid by measuring the absorbance characteristics of the processing liquid. The concentration sensing means includes a light-transmitting section that introduces the processing liquid into the inside to let the processing liquid pass therethrough, a light-emitting section that radiates light having a predetermined wavelength to the light-transmitting section, a light-receiving section that receives the light therefrom via the light-transmitting section, a first lens that condenses the light emitted from the light-emitting section to the light-transmitting section, a second lens that condenses the light that has passed through the light-transmitting section to the light-receiving section, and a cooling mechanism that cools at least one of these.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: December 11, 2018
    Assignees: Kurashiki Boseki Kabushiki Kaisha, Tokyo Electron Limited
    Inventors: Noboru Higashi, Satoru Hiraki, Hiromi Kiyose, Hideaki Sato, Hiroshi Komiya
  • Patent number: 10141208
    Abstract: A vacuum processing apparatus includes a tilting unit configured to tilt, in a vacuum vessel, a substrate holder including a refrigerator, and a rotary joint provided in the tilting unit and including a coolant path configured to supply or exhaust a coolant gas to or from the refrigerator. The rotary joint includes a fixed portion fixed to the vacuum vessel, a pivotal portion provided so as to pivot with respect to the fixed portion and fixed to the substrate holder, and a grease supply passage.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: November 27, 2018
    Assignee: Canon Anelva Corporation
    Inventors: Ryo Ishizaki, Daisuke Kobinata, Naoki Kubota, Kyosuke Sugi
  • Patent number: 10131984
    Abstract: Provided is a substrate processing apparatus. The apparatus includes: a process chamber configured to accommodate substrates which are horizontally oriented and stacked in multiple stages and process the substrates; a process gas supply unit configured to supply a process gas to the process chamber; an inert gas supply unit configured to supply an inert gas to the process chamber; and an exhaust unit configured to exhaust the process chamber. The process gas supply unit includes a process gas supply nozzle. The inert gas supply unit includes inert gas supply nozzles disposed at both sides of the process gas supply nozzle. Each of the inert gas supply nozzles includes at least one first inert gas ejection hole formed in a region where the substrates are stacked and at least one second inert gas ejection hole formed in a region where the substrates are not stacked.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: November 20, 2018
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Satoshi Okada
  • Patent number: 10112836
    Abstract: A nanosynthesis apparatus includes an outer tube and an inner tube with surfaces that oppose each other across a gap as part of a reaction chamber. A deposition fluid flows along the reaction chamber to grow nanostructures such as graphene or carbon nanotubes on a substrate in the reaction chamber. The reaction chamber may have an annular cross-section, and the growth substrate may wrap around the inner tube in a helical manner. This configuration can allow a flexible film substrate to travel through the reaction chamber along a path that is significantly longer than the length of the reaction chamber while maintaining a uniform gap between the substrate and the reaction chamber wall, which can facilitate a uniform temperature distribution and fluid composition across the width of the substrate.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: October 30, 2018
    Assignee: The Regents of The University of Michigan
    Inventors: Anastasios John Hart, Erik Polsen
  • Patent number: 10115614
    Abstract: A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: October 30, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Junji Oikawa, Hiroyuki Nakayama
  • Patent number: 10090174
    Abstract: A semiconductor processing chamber is provided and may include a wafer transfer passage that extends through a chamber wall and has an inner passage surface defining an opening, an insert including an insert inner surface defining an insert opening, and a gas inlet. A first recessed surface of the wafer transfer passage extending at least partially around and outwardly offset from the inner passage surface, a first insert outer surface extending at least partially around and outwardly offset from the insert inner surface, and a first wall surface extending between the inner passage surface and the first recessed surface, at least partially define a gas distribution channel fluidically connected to the gas inlet, the first recessed surface is separated from the first insert outer surface by a first distance and an insert front surface faces and is separated from the first wall surface by a first gap distance.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: October 2, 2018
    Assignee: Lam Research Corporation
    Inventors: Panya Wongsenakhum, Peter Krotov