Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract: An apparatus includes a substrate support having an outer surface for guiding the substrate through a first vacuum processing region and at least one second vacuum processing region. First and second deposition sources correspond to the first processing region and at least one second deposition source corresponds to the at least one second vacuum processing region, wherein at least the first deposition source includes an electrode having a surface that opposes the substrate support. A processing gas inlet and a processing gas outlet are arranged at opposing sides of the surface of the electrode. At least one separation gas inlet how one or more openings, wherein the one or more openings are at least provided at one of opposing sides of the electrode surface such that the processing gas inlet and/or the processing gas outlet are provided between the one or more openings and the surface of the electrode.

Abstract: Disclosed is an apparatus and method for forming lubricant recesses having minute configurations by applying a photolithograph method in a curved inner surface, such as a cylinder bore surface of a cylinder block, the inside of a cylinder liner, the inside of a compressor cylinder, a big end of a connecting rod, a big end bearing, a shaft insertion hole of a rocker arm, or the like in an internal combustion engine.

Abstract: A tool for depositing multilayer coatings onto a substrate. The tool includes a housing defining a vacuum chamber connected to a vacuum source, deposition stations each configured to deposit a layer of multilayer coating on the substrate, a curing station, and a contamination reduction device. At least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. In one tool configuration, the substrate may travel back and forth through the tool as many times as needed to achieve the desired number of layers of multilayer coating. In another, the tool may include numerous housings adjacently spaced such that the substrate may make a single unidirectional pass. The contamination reduction device may be configured as one or more migration control chambers about at least one of the deposition stations, and further includes cooling devices, such as chillers, to reduce the presence of vaporous layer precursors.

Abstract: A substrate processing apparatus includes an electrostatic chuck that includes a chuck electrode and electrostatically attracts a substrate; a direct voltage source that is connected to the chuck electrode and applies a voltage to the chuck electrode; and an evacuation unit that includes a rotor and discharges, via a heat transfer gas discharge pipe, a heat transfer gas supplied to a back surface of the substrate electrostatically-attracted by the electrostatic chuck. The evacuation unit is connected via a power supply line to the direct voltage source, generates regenerative power, and supplies the regenerative power to the direct voltage source.

Abstract: A method, comprising: —providing a process space atmosphere at a process space atmosphere pressure; —providing an exterior atmosphere at an exterior atmosphere pressure that is different from the process space atmosphere pressure; —providing a passage via which the exterior atmosphere is in open communication with the process space atmosphere, and via which substrates are exchangeable between the exterior atmosphere and the process space atmosphere; —injecting an exchange fluid into the passage at at least one exchange fluid injection point, so as to effect a flow of exchange fluid that extends through at least a part of the passage, wherein said flow is directed towards —the exterior in case the exterior atmosphere pressure is greater than the process space atmosphere pressure; or —the process space in case the exterior atmosphere pressure is smaller than the process space atmosphere pressure.

Abstract: Disclosed is a nanoparticle generating unit, a nanoparticle coating unit, and a core-shell nanoparticle collecting unit are connected to link and continuously process generation of nanoparticles and a coating and collecting process. The nanoparticle coating unit is formed of a porous material or in a grid structure and a moving speed of the nanoparticles can be decreased using a speed adjustment member installed at a process passage of a coating chamber.

Abstract: A substrate processing apparatus includes a first reaction chamber including: a first heating unit, a first processing space, and a first transfer space disposed under the first processing space, a second reaction chamber including: a second heating unit, a second processing space, and a second transfer space disposed under the second processing space; a first sidewall and a second sidewall defining the first reaction chamber and the second reaction chamber, wherein the first sidewall is shared by the first reaction chamber and the second reaction chamber, and a cooling channel disposed in the first sidewall and the second sidewall such that a cooling efficiency of the first sidewall is higher than that of the second sidewall, wherein the first reaction chamber and the second reaction chamber are disposed adjacent to each other with the first sidewall therebetween.

Abstract: A power supply device supplies power to a substrate holder having a plurality of electrodes. The device includes a first fixed conductive member, a second fixed conductive member, a fixed insulating member fixed to an insulating housing portion and configured to insulate the first fixed conductive member from the second fixed conductive member, a first rotation conductive member, a second rotation conductive member, a rotation insulating member fixed to an insulating column portion and configured to insulate the first rotation conductive member from the second rotation conductive member, a first power supply member configured to supply a first voltage to the substrate holder via the first rotation conductive member and the first fixed conductive member, and a second power supply member configured to supply a second voltage to the substrate holder via the second rotation conductive member and the second fixed conductive member.

Abstract: In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.

Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.

Abstract: Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.

Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

Abstract: Machine (1) for the plasma treatment of containers (3), which comprises: a chamber (5) suitable for receiving a container (3) to be treated, a cover (8) defining a nozzle (9) in the extension of the chamber (5); a duct (14) for depressurization the container (3), which duct opens into the nozzle (9) and connects the latter to a vacuum source (15); a first valve (19) having a closed position, in which it closes off the depressurization duct (14), and an open position, in which it brings the nozzle (9) and the vacuum source (15) into communication; a duct (27) for pressurizing the container (3), separate from the depressurization duct (14), this pressurization duct (27) emerging in the nozzle (9) beyond the depressurization duct (14) and connecting the nozzle (9) to a pressure source (28); and a second valve (29) having a closed position, in which it closes off the pressurization duct (27), and an open position, in which it brings the nozzle (9) and the pressure source (28) into communication.

Abstract: Washing machine for the washing of laundry such as clothes and textiles, which washing machine has a main part that comprises: an inlet, for supplying washing water, an outlet, for disposal of washing water, a pump, in order to pump the washing water, a connection unit for fluid tight connection of a washing bag to the main part. The washing bag has fluid tight walls and is removably connectable to the connection unit of the main part, wherein the pump is arranged to pump water and air from the washing bag in order to create a certain negative pressure inside it with respect to the surrounding atmospheric pressure and by that emptying it of washing water.

Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

Abstract: A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion source chamber may be biased to a first positive voltage, while the suppression electrode is biased to a negative voltage to attract positive ions from within the chamber through an aperture and toward the workpiece. In the cleaning mode, the ion beam is defocused so that it strikes the suppression electrode and the ground electrode. The voltages applied to the ion source chamber and the electrodes are pulsed to minimize the possibility of glitches during this cleaning mode.

Abstract: In various embodiments, systems, methods, and apparatus are provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor system. A system includes a base plate having a plurality of electrical connections, a pair of filaments extending from the base plate, and a stabilizer connecting the pair of filaments. Each filament is in electrical contact with, and defines a conductive path between, the two electrical connections. A method of stabilizing the filaments includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electrically insulating material.

Abstract: The present disclosure relates to a dishwasher having a spray arm for spraying water to a lower rack and a tower nozzle for supplying water to an upper rack. The dishwasher may reduce (e.g., prevent) leakage of water from the tower nozzle, and may supply water to either the spray arm or to the tower nozzle through a rotating nozzle depending on a pressure of water.

Abstract: A substrate processing apparatus includes a vacuum chamber; a turntable rotatably provided in the vacuum chamber, on which a circular substrate is to be mounted, and provided with a circular concave portion at a front surface having a larger diameter than that of the substrate, and a circular substrate mounting portion provided in the concave portion having a diameter smaller than that of the concave portion and the substrate at a position higher than a bottom portion of the concave portion, the center of the substrate mounting portion being off center with respect to the center of the concave portion toward an outer peripheral portion side of the turntable; a process gas supplying unit which supplies a process gas to the substrate; and a vacuum evacuation mechanism which evacuates the vacuum chamber.