Abstract: A mask structure for a deposition device includes first segments and second segments. The first segments are arranged in a direction surrounding a central axis and separated from one another. The second segments are disposed above the first segments. Each of the second segments overlaps two of the first segments adjacent to each other in a vertical direction parallel to an extending direction of the central axis. A deposition device includes a process chamber, a stage, and the mask structure. The stage is at least partially disposed in the process chamber and includes a holding structure of a substrate. The mask structure is disposed in the process chamber, located over the stage, and covers a peripheral region of the substrate to be held on the stage. An operation method of the deposition device includes horizontally adjusting positions of the first segments and the second segments respectively between different deposition processes.

Abstract: Disclosed is a liquid chemical vapor recovery device, a wet stripping device, a photoresist stripping process and a method for manufacturing a thin film transistor-liquid crystal display using the same. The liquid chemical vapor recovery device comprises: an exhaust pipe for discharging a gas in a processing chamber for wet processing with a liquid chemical, the gas comprising a vapor of the liquid chemical; and a reflux pipe for refluxing the liquid chemical condensed in the exhaust pipe to a liquid chemical storage tank, the reflux pipe having an inlet connected to the exhaust pipe and an outlet connected to the liquid chemical storage tank, wherein, at least a part of the exhaust pipe positioned upstream of the inlet of the reflux pipe is formed as a pipe segment with a rugged inner surface.

Abstract: Fixture (1) for exposing two opposite ends of an object to be coated (6) to a vapor deposition while masking an intermediate portion (8) of the object against being coated, comprising an object holding device (OHD), whereas the object holding device (OHD) consists of at least one battery (3) of hole plate strips (2) which are designed and arranged that way that each single hole (retaining hole; H) is formed by a pair of hole plate strips (2) that way that the first segment (4) of the hole (H) is embodied by the preceding hole plate strip (2) and that the second segment (5) of the hole (H) is embodied by the subsequent hole plate strip (2).

Abstract: A mask frame and a method for manufacturing the same, a mask assembly for evaporation and an evaporation apparatus are provided. The mask frame includes a frame body. The frame body includes a plurality of frame members, and the frame body comprises a first surface and a second surface opposite to each other. A plurality of grooves are provided at intervals on the first surface of each of the plurality of frame members and along an extending direction of the frame member, and each groove is formed by the first surface recessing towards the second surface, and has a groove depth in a direction perpendicular to the first surface. For the plurality of grooves in each frame member, a groove depth of the groove at a middle position of the frame member is smaller than the grooves at two ends of the frame member.

Abstract: The present disclosure relates to a mask for manufacturing a display. A mask for display according to the embodiment of the present disclosure comprises an aperture corresponding to a display area, a dummy aperture near the aperture, a rib surrounding circumferences of the aperture and the dummy aperture, and a sub rib between the aperture and the dummy aperture.

Abstract: A hood for depositing vaporized metals on glass container surfaces includes a vaporized metal source that produces vaporized metal; an enclosure, receiving one or more glass containers, comprising at least one side wall and at least one center section having a top above the glass containers; and one or more conduits that fluidly communicate the vaporized metal to an opening in at least one of the top of the center section and the side wall using one or more conduit fans.

Abstract: A vapor deposition mask includes a frame and a metal film supported by the frame, wherein the metal film includes a mask region arranged with a plurality of pixel opening parts corresponding to a display region of a display device, and an alignment region arranged in a periphery of the mask region, the alignment region includes a first opening part and a plurality of second opening parts arranged in a periphery of the first opening part, and a maximum width of the second opening part is smaller than a maximum width of the first opening part.

Abstract: Disclosed is a substrate treating apparatus that treats a substrate with processing liquids. The apparatus includes a substrate holder, an exterior cup, and an interior cup. The interior cup includes an interior cup body, and an interior cup outlet. The exterior cup includes an exterior cup body, an exterior bottom cup, a first drain outlet, a first exhaust port, a second drain outlet, a second exhaust port, and a separation partition. The apparatus further includes an annular member movable upwardly/downwardly, and a drive unit that causes the annular member to move to shift the interior cup body between a collecting position and a retracting position.

Abstract: A deposition apparatus, such as an ultra-fine pattern deposition apparatus is provided. A deposition apparatus includes a base substrate, a heating assembly, a deposition source material and a pattern guide. The heating assembly has at least a part thereof included in the base substrate. The deposition source material is disposed on the heating assembly. The pattern guide overlies the base substrate and has a portion thereof above the heating assembly and the deposition source material. The pattern guide has an opening including a laterally recessed lower region and an upper region. The opening extends from an upper surface of the base substrate to an upper surface of the pattern guide. The lower region of the opening is wider than the upper region of the opening, and the opening of the pattern guide is configured to guide a material emitted from the deposition source material to a target region on a target substrate that is spaced apart from the base substrate.

Abstract: There is provided a processing apparatus including a stage disposed inside a chamber, and a cover member provided in an outer edge portion of the stage and configured to partition an interior of the chamber into a processing space above the stage and a bottom space below the stage. The cover member includes a first protrusion portion configured to make surface-to-surface contact with a surface of the stage, a second protrusion portion spaced apart from the first protrusion portion and configured to make surface-to-surface contact with the surface of the stage, and an exhaust path provided between the first protrusion portion and the second protrusion portion and configured to exhaust a gas from a buffer space formed by the cover member and the stage.

Abstract: A first region of a valid portion formed on a mask sheet has a shape corresponding to a shape of each of active regions and provided for each active region of a vapor target substrate. A second region of the valid portion is located outside of the first region, and includes a plurality of vapor deposition holes (H) covered with a hauling sheet.

Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.

Abstract: A shutter disk suitable for shield a substrate support in a physical vapor deposition chamber is provided. In one embodiment, the shutter disk includes a disk-shaped body having an outer diameter disposed between a top surface and a bottom surface. The disk-shape body includes a double step connecting the bottom surface to the outer diameter.

Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: In accordance with various embodiments, a coating arrangement may comprise: an electron beam gun for providing an electron beam; a beam trap for trapping the electron beam; a control device for driving the electron beam gun and/or the beam trap, wherein the control device is configured to switch over the driving between a plurality of configurations, of which: in a first configuration, the electron beam is directed onto the beam trap; and in a second configuration, the electron beam is directed past the beam trap.

Abstract: A system may include a reactor vessel comprising an outer wall, a heat source thermally coupled to the reactor vessel, at least one reactor inlet in the outer wall, and at least one reactor outlet. The reactor vessel may be configured to house a porous preform in a radially central core region. The at least one reactor inlet may be configured to introduce a precursor gas to the reactor vessel to produce swirling flow of the precursor gas around the radially central core region of the reactor vessel. The at least one reactor outlet may be configured to remove exhaust gas from the reactor vessel and assist in maintaining a dynamic pressure of the reactor vessel greater than a pressure in the porous preform.

Abstract: A system for controlling a temperature of a substrate during treatment in a substrate processing system includes a substrate support defining a center zone and a radially-outer zone. The substrate is arranged over both the center zone and the radially-outer zone during treatment. A first heater is configured to heat the center zone. A second heater is configured to heat the radially-outer zone. A first heat sink has one end in thermal communication with the center zone. A second heat sink has one end in thermal communication with the radially-outer zone. A temperature difference between the center zone and the radially-outer zone is greater than 10° C. during the treatment.

Abstract: A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.