Abstract: A flexible carrier substrate assembly or module that facilitates stacking of multiple carrier substrates bearing semiconductor dice for high density electronic systems. After the dice are placed on the flexible substrate, a flexible support frame may be applied to the flexible substrate. The support frame includes conductive paths therethrough to connect to circuit traces running from the dice on the substrate to the substrate perimeter to interconnect superimposed carrier substrates. The flexible carrier substrates may be bent to a radius of any given curvature to conform to various non-planar regular and irregular surfaces. Furthermore, since the frame as well as the substrate may be flexible, multiple, flexible substrate assemblies may be stacked one on top of another wherein an upper assembly has a different radius than a lower module and any intermediate assemblies have progressively differing radii from bottom to top position.

Abstract: In one aspect, the invention encompasses a semiconductor circuit construction including a material which comprises Q, R, S and B. In such construction, Q comprises one or more refractory metals, R is selected from the group consisting of one or more of tungsten, aluminum and silicon, S is selected from the group consisting of one or more of nitrogen and oxygen, and B is boron. Also, in such construction R and Q do not comprise a common element. In another aspect, the invention encompasses a method of forming a capacitor. A first capacitor electrode is formed, a diffusion barrier layer is formed proximate the first capacitor electrode, and a dielectric layer is formed to be separated from the first capacitor electrode by the diffusion barrier layer. A second capacitor electrode is formed to be separated from the first electrode by the dielectric layer.

Abstract: A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. An AlN layer is formed on top of the semiconductor substrate and annealed in the presence of oxygen gas to convert into an Al2O3 layer. Thereafter, a conductive layer is formed on top of the Al2O3 layer. Finally, the conductive layer and the Al2O3 layer are patterned into the gate structure.

Abstract: The present invention provides multiple-wavelength vertical-cavity surface-emitting laser (“MW-VCSEL”) arrays. These arrays are fabricated in a molecular beam epitaxy system or the like using two patterned-substrate growth techniques. The growth techniques can be used with an in-situ laser reflectometry. In one embodiment, a temperature dependent growth rate to create the devices is provided. In an alternative aspect, uniform growth is performed followed by a temperature-dependent desorption technique. These techniques provided desired wavelength span and desired characteristics.