Abstract: A process for silicon wafer-to-wafer bonding at temperatures lower than 500.degree. C. has been developed. It consists of (1) treating the cleaned surfaces to make them smooth and hydrophilic, (2) initiating the bond by making intimate contact between wafers and (3) enhancing the bond strength at elevated temperatures. This bonding process can be applied to sensor packaging.
Type:
Grant
Filed:
December 21, 1993
Date of Patent:
May 9, 1995
Assignee:
Delco Electronics Corporation
Inventors:
Han-Sheng Lee, Steven E. Staller, Dan W. Chilcott