Abstract: The present invention relates to an apparatus and method for measuring electrical characteristics of materials having undefined geometries in an accurate and reproducible manner. Generally speaking, electrical characteristics such as conductivity and resistance are measured by compressing the material with a predetermined force or pressure in a controlled manner to provide reproducible results.
Abstract: Method and apparatus for measuring the voltage and state of charge of a secondary battery. The voltage and state of charge values are taken by a circuit every four (4) seconds by reading voltage, waiting two (2) seconds, reading current, waiting two (2) seconds, and repeating the voltage readings and the current readings. The circuit includes a 4-bit microprocessor, CMOS analog switches, and two operational amplifiers. The voltage and current readings are taken from dual-sloped converters, and the values determined by software algorithms in the microprocessor.
Type:
Grant
Filed:
August 28, 1992
Date of Patent:
May 24, 1994
Assignee:
Alexander Manufacturing Company
Inventors:
Richard B. Alexandres, Dennis P. Kindschuh, Larry Hall, Perry B. Peden, Larry Klusman, Steve Potratz
Abstract: The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respectively, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of applying voltage between the scan lines and the signal lines, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of stopping the voltage application, and the scan lines and the signal lines relating to variation of the heating state are detected from difference or quotient between an infrared image at the voltage applying state and an infrared image at the stopping state of voltage application, thereby a pixel address with a shortcircuit defect occurring is specified.
Type:
Grant
Filed:
July 30, 1992
Date of Patent:
May 3, 1994
Assignee:
Hitachi, Ltd.
Inventors:
Shunji Maeda, Hitoshi Kubota, Makoto Ono