Abstract: A spin-orbit torque device is described. The spin-orbit torque device comprising an interfacing layer and a magnetic layer having a switchable magnetization direction. An interface is formed between the interfacing layer and the magnetic layer, the interface having a 3m1 crystallographic point group symmetry adapted to interact with an electric current to generate a spin torque for switching the magnetization direction of the magnetic layer. A method for fabricating the spin-orbit device and a method for switching the switchable magnetization of a spin-orbit torque device are also described.

Abstract: A sputter growth method for a crystalline ordered topological insulator (TI) material on an amorphous substrate, which is possible to use at a CMOS-compatible temperature. The process can be integrated into CMOS fabrication processes for Spin Orbit Torque (SOT) devices. The resulting material can include a thin film crystalline ordered TI layer, sputter deposited on an amorphous substrate, and an adjacent ferromagnetic (FM) layer in which spin-orbit torque is provided by the TI layer, for example to cause switching in magnetic states in a magnetic memory device.

Abstract: Vibration of an iron core is reduced to reduce transformer noise. An iron core for a transformer comprises a plurality of grain-oriented electrical steel sheets stacked together, wherein at least one of the plurality of grain-oriented electrical steel sheets: (1) has a region in which closure domains are formed in a direction crossing a rolling direction and a region in which no closure domains are formed; (2) has an area ratio R0 of 0.10% to 3.0%, the area ratio R0 being defined as a ratio of S0 to S; and (3) has an area ratio R1a of 50% or more, the area ratio R1a being defined as a ratio of S1a to S1.

Abstract: Ferromagnetic materials are disclosed that comprise at least one Dirac half metal material. In addition, Dirac half metal materials are disclosed, wherein the material comprises a plurality of massless Dirac electrons. In addition, ferromagnetic materials are disclosed that includes at least one Dirac half metal material, wherein the material comprises a plurality of massless Dirac electrons, wherein the material exhibits 100% spin polarization, and wherein the plurality of electrons exhibit ultrahigh mobility. Spintronic devices and heterostructures are also disclosed that include a Dirac half metal material.

Abstract: A substrate for a magnetic disk includes a substrate main body having a disk shape and an alloy film. The substrate has a thickness (T+D) of 0.520 mm or less, which is the sum of a thickness T of the substrate main body and a thickness D of the film formed on main surfaces of the substrate main body. The disk shape has an outer diameter of 90 mm or more. A ratio D/T of the thickness D to the thickness T is 0.025 or more. The thickness of the film formed on an outer circumferential edge surface of the substrate main body is greater than the thickness of the film formed on each of the main surfaces, and the thickness of the film formed on each of the main surfaces is 80% or more of the thickness of the film formed on the outer circumferential edge surface.

Abstract: A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

Abstract: An inductor core includes a pillar shaped magnetic main body comprising a magnetic material including pores. The magnetic main body includes: an inclined portion including an inclined surface that constitutes an outer circumferential surface of a truncated cone having an increasing outer diameter; and a straight body portion that is coaxial with the inclined portion and includes an outer peripheral surface that constitutes an outer circumferential surface of a cylindrical column body, the straight body portion being connected to the inclined portion. A difference between an average value of inter-centroid distances of the pores at the straight body portion and an average diameter of the pores at the straight body portion is greater than a difference between an average value of inter-centroid distances of the pores at the inclined portion and an average diameter of the pores at the inclined portion.

Abstract: A long range low frequency antenna having an elongated magnetic core; a coil surrounding the elongated magnetic core; a bobbin; where the elongated magnetic core is introduced in a cavity of the bobbin; and a housing overmolded on the bobbin in a waterproof manner. The antenna also comprises at least one damper located at one extreme of the elongated magnetic core. The at least one damper is made of an elastic and thermally-stable compound having a resin and a first filler including a natural mineral filler. Therefore, longitudinal dilatations, shrinkage, mechanical shocks, and vibrations of the elongated magnetic core are absorbed by the at least one damper, avoiding an impact over an inductance variation of the coil.

Abstract: A magnetic composite contains metal magnetic particles and a resin. The metal magnetic particles contain at least one Fe-containing crystalline material, and [Formula 1]Bs×?×{log(?×1/D+?×Bs+?)}{circumflex over (?)}??13T, where Bs and D are the saturation flux density in T and the median diameter of crystallites in ?m, respectively, of the crystalline material, ?=14.3, ?=?0.67, ?=752, ?=512, and ?=?815.

Abstract: A composite magnetic body according to one aspect of the present invention includes a first metal magnetic particle covered with a first resin portion made of a first resin material and a second metal magnetic particle having a smaller particle size than the first metal magnetic particle, where the second metal magnetic particle is bound to the first metal magnetic particle via a second resin portion made of a second resin material, the second resin material having a softening point higher than the first resin material.

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.

Abstract: A magnetic memory device including a magnetic tunnel junction is provided. The magnetic tunnel junction includes a fixed layer, a polarization enhancement structure on the fixed layer, a tunnel barrier layer on the polarization enhancement structure, and a free layer on the tunnel barrier layer, wherein the polarization enhancement structure includes a plurality of polarization enhancement layers and at least one spacer layer which separates the plurality of polarization enhancement layers from each other. A thickness of each of the plurality of polarization enhancement layers is from 5 ? to about 20 ?, and a thickness of the at least one spacer layer is from about 2 ? to about 15 ?.

Abstract: A semiconductor device including a magnetic tunnel junction stack, a metallic hard mask aligned above the magnetic tunnel junction stack and an air gap surrounding the metallic hard mask. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, forming barrier on vertical side surfaces of the dielectric, and removing the dielectric between the metallic hard mask and the barrier. A method including forming a magnetic tunnel junction stack, forming a metallic hard mask aligned above the magnetic tunnel junction stack, conformally forming a dielectric over the metallic hard mask and the magnetic tunnel junction stack, selectively removing a portion of the dielectric surrounding the metallic hard mark.

Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.

Abstract: A bi-material permanent magnet for an electric machine includes a core including a first magnetic material and a shell portion located on the core and made of a second magnetic material. The first magnetic material comprises a magnet material with an energy less than 20 Mega Gauss Oersteds (MGOe). The second magnetic material comprises a magnet material with an energy greater than 30 MGOe.

Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

Abstract: Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.

Abstract: An inductor array component including an element body and a first straight wiring line and a second straight wiring line that are arranged on the same plane inside the element body. The element body includes a first region that is located on a first side of the first straight wiring line or the second straight wiring line in a normal direction that is normal to the plane, a second region that is located on a second side of the first straight wiring line or the second straight wiring line in the normal direction that is normal to the plane, and a third region that is located between the first straight wiring line and the second straight wiring line. The greater one out of the magnetoresistance of the first region and the magnetoresistance of the second region is greater than or equal to the magnetoresistance of the third region.

Abstract: A magnetic tape in which an arithmetic average roughness Ra measured at a surface of a magnetic layer with an atomic force microscope is 2.0 nm or less, and in an environment with a temperature of 32° C. and a relative humidity of 80%, a frictional force F45° on the surface of the magnetic layer with respect to an LTO8 head measured at a head tilt angle of 45° is 4 gf to 15 gf, and a standard deviation of a frictional force F on the surface of the magnetic layer with respect to the LTO8 head measured at each of head tilt angles of 0°, 15°, 30°, and 45° is 10 gf or less.

Abstract: A magnetic material and an inductor capable of attaining both higher magnetic permeability and improved DC superposition characteristics. A composite magnetic material contains metal magnetic particles, in which the metal magnetic particles include first particles having a median diameter D50 of 1.3 ?m or more and 5.0 ?m or less (i.e., from 1.3 ?m to 5.0 ?m), and second particles having a median diameter D50 larger than the first particles. The first and second particles each include a core portion made of a metal magnetic material, and an insulating film provided on a surface of the core portion. The insulating film of the second particles has an average thickness of 40 nm or more and 100 nm or less (i.e., from 40 nm to 100 nm). The insulating film of the first particles has an average thickness smaller than that of the insulating film of the second particles.