Abstract: A paste suitable for a negative plate of a lead-acid battery, the paste comprising lead oxide and carbon black, wherein the carbon black has the following properties: (a) a BET surface area between about 100 and about 2100 m2/g; and (b) an oil adsorption number (OAN) in the range of about 35 to about 360 cc/100 g, provided that the oil absorption number is less than the 0.14×the BET surface area+65.

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Abstract: An anode composite material for lithium ion battery and a preparation method thereof. The composite material is a composite material formed by compounding at least one of SiCO, SiCNO, SiCN and SiBCN with LiaMbPO4, wherein 0.95?a?1.1, 0.95?b?1.1, and M is at least one of Fe, Co, Ni and Mn. The content of at least one of SiCO, SiCNO, SiCN and SiBCN in the anode composite material is in a range of 1-20 wt % of the total weight of the composite material. The composite material formed by compounding at least one of SiCO, SiCNO, SiCN and SiBCN with LiaMbPO4 is obtained by adding LiaMbPO4 into at least one organosilicon polymer of polysiloxane, polysilazane, and polyborosilazane, and then curing, crosslinking, and pyrolyzing. Compared with LiaMbPO4, the composite material has a notable improvement in electrochemistry performance and tap density.

Abstract: Provided is a paste composition for front electrode of a solar cell. The paste composition includes conductive power, an organic vehicle, a glass frit, and an additive. The additive includes at least one material selected from the group consisting of Zn, Sb, V, W, Cr, Cd, Re, Sn, Mo, Mn, Ni, Co, Cu, and metal oxide including one of the foregoing materials.

Abstract: Provided is a composition comprising a polymeric material, a filler material dispersed in the polymeric material, the filler material comprising inorganic particles and a discontinuous arrangement of conductive material wherein at least a portion of the conductive material is in durable electrical contact with the inorganic particles, and conductive material dispersed in the polymeric material.

Abstract: Impregnated rare earth metal-containing barium-aluminum-scandate cathodes with a rare earth oxide doped tungsten matrix and methods for the fabrication thereof are described. In one aspect, an impregnated rare earth metal-containing barium-aluminum-scandate cathode comprises: a rare earth oxide doped tungsten matrix, and an impregnated active substance. The active substance comprises scandium oxide (Sc2O3), a second rare earth oxide, and barium calcium aluminate, wherein the molar ratio of Ba:Ca:Al is about 4:1:1.

Abstract: Disclosed herein is a composition for making a thin film comprising a solvent; a plurality of particles; the particles being derived by reacting a metal salt with itself or with a ligand; where the metal salt forms metal oxides and/or metal hydroxides upon reacting with itself or with a ligand; and where the particles have a metal oxide content that is substantially greater than their metal hydroxide content when heated at a temperature of less than or equal to 200° C. Disclosed herein too is a method for making the composition.

Abstract: The present invention provides a multi-dimensional carbon active compound composite comprising a first carbon material, a second carbon material, an active compound, and further a seed material. This composite is capable of storing faradic or non-faradic charges. The produced multi-dimensional carbon can significantly inhibit the aggregation and disintegration of active compounds. Stacked carbon structure also formed a 3-D framework with high electron conductivity, which increases the rate capability of electrode. The green and simple synthesis process has a great potential for mass production. This green energy storage material can be widely applied to lithium secondary ion battery, supercapacitor, and lithium-air battery electrodes.

Abstract: The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm3.

Abstract: It is an object to provide a method for producing compound semiconductor particles in which monodisperse compound semiconductor particles can be prepared according to the intended object, clogging with products does not occur due to self-dischargeability, a large pressure is not necessary, and productivity is high. In producing compound semiconductor particles by separating and precipitating, in a fluid, semiconductor raw materials, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the semiconductor raw materials are separated and precipitated in the thin film fluid.

Abstract: A preparation method of a battery composite material includes steps of providing phosphoric acid, iron powder, a carbon source and a first reactant, processing a reaction of the phosphoric acid and the iron powder to produce a first product, calcining the first product to produce a precursor, among which the formula of the precursor is written by Fe7(PO4)6, and processing a reaction of the precursor, the carbon source and the first reactant to get a reaction mixture and calcining the reaction mixture to produce the battery composite material. As a result, the present invention achieves the advantages of reducing grind time of fabricating processes, so that the prime cost, the time cost, and the difficulty of fabricating are reduced.

Abstract: This invention provides a carbon nanostructure including: carbon containing rod-shaped materials and/or carbon containing sheet-shaped materials which are bound three-dimensionally; and graphene multilayer membrane walls which are formed in the rod-shaped materials and/or the sheet-shaped materials; wherein air-sac-like pores, which are defined by the graphene multilayer membrane walls, are formed in the rod-shaped materials and/or the sheet-shaped materials.

Abstract: To obtain a non-aqueous electrolyte secondary battery having high capacity, high output and good cyclability, nickel manganese composite hydroxide particles are a precursor for a cathode active material having lithium nickel manganese composite oxide with a hollow structure and a small and uniform particle size. An aqueous solution for nucleation includes a metallic compounds that contains nickel and a metallic compound that contains manganese, but does not include a complex ion formation agent that forms complex ions with nickel, manganese and cobalt. After nucleation is performed, an aqueous solution for particle growth is controlled so that the temperature of the solution is 60° C. or greater, and so that the pH value that is measured at a standard solution temperature of 25° C. is 9.5 to 11.5, and is less than the pH value in the nucleation step.

Abstract: Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor.

Abstract: The present invention discloses an electrically conducting composition that include a charge transporting oligomer selected either from oligoanilines and/or oligothiophenes and electron accepting dopants; and further contain conductivity enhancing substances such as ionic liquids, or a nanoparticle, dissolved in a mixture of at least two solvents to achieve the desired formulation for making the electrically conductive layer for organic electronic devices.

Abstract: The invention is directed to a carbon material dispersion, including: a fluorinated carbon material having a fluorinated surface formed by bringing a treatment gas with a fluorine concentration of 0.01 to 100 vol % into contact with a carbon material under conditions at 150 to 600° C.; and a dispersion medium in which the fluorinated carbon material is dispersed.

Abstract: A method for forming an electrically conductive oxide film (1) on a substrate (2), the method comprising the steps of, bringing the substrate (2) into a reaction space, forming a preliminary deposit on a deposition surface of the substrate (2) and treating the deposition surface with a chemical. The step of forming the preliminary deposit on the deposition surface of the substrate (2) comprises forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space. The step of treating the deposition surface with a chemical comprises treating the deposition surface with an organometallic chemical and subsequently purging the reaction space, to form oxide comprising oxygen, first metal and transition metal. The steps of forming the preliminary deposit and treating the deposition surface being alternately repeated such that a film (1) of electrically conductive oxide is formed on the substrate (2).

Abstract: Electronic printing devices ink has nanoparticles of semiconducting materials with desired composition, size and band gap and modified with a volatile capping agent. Mercury cadmium telluride is synthesized by refluxing a mixture of metal salt and telluride precursor. Mercury (II) acetate and cadmium (II) acetate are reacted with a tellurium precursor (e.g. tri-n-octylphosphine telluride or telluric acid) in presence of a ligand (e.g. 1-dodecanethiol or oleylamine). This protocol yields nanoparticles of diameter ˜2-1000 nm range. The desired composition of nanoparticles is obtained by varying the relative concentration of the metal precursor. The ink is formulated by modifying the nanoparticles with volatile capping agent and dispersing the modified nanoparticles in a solvent.

Abstract: A paste composition for a rear electrode of a solar cell according to the embodiment includes conductive powder; an organic vehicle; and an additive including silicon or a metal.

Abstract: A process of synthesizing nanocrystals, the process including: obtaining a metal precursor, a non-metal precursor, a ligand compound, and an ionic liquid; and contacting the metal precursor, the non-metal precursor, the ligand compound, and the ionic liquid to form a mixture and synthesize a first semiconductor nanocrystal.