Patents Examined by Kheim D. Nguyen
  • Patent number: 10181469
    Abstract: Disclosed herein is a semiconductor integrated circuit device including a standard cell with a fin extending in a first direction. The fin and a gate line extending in a second direction perpendicular to the first direction and provided on the fin constitute an active transistor. The fin and a dummy gate line provided in parallel with the gate line constitute a dummy transistor. The active transistor shares a node as its source or drain with the dummy transistor.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: January 15, 2019
    Assignee: SOCIONEXT INC.
    Inventor: Hiroyuki Shimbo
  • Patent number: 9224777
    Abstract: A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 29, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tadashi Sawayama, Hiroshi Ikakura, Takaharu Kondo, Toru Eto
  • Patent number: 7463089
    Abstract: A fully differential class D amplifier is provided. The class D amplifier includes an active amplifier in the feedback path of the modulator. In one embodiment, the class D amplifier includes a fully differential amplifier as an input buffer, in which a supply-independent reference voltage is used as the common mode voltage of the output of the fully differential amplifier. In one embodiment, the class D amplifier includes a pulse width modulation circuit that includes rail-to-rail comparators.
    Type: Grant
    Filed: July 28, 2006
    Date of Patent: December 9, 2008
    Assignee: National Semiconductor Corporation
    Inventors: Sumant Bapat, Ansuya Bhatt, Christopher B. Heithoff, Raminder Jit Singh
  • Patent number: 6909121
    Abstract: A method of manufacturing a microlens array substrate is provided comprising the steps of: closely providing a substrate precursor (30) between a first master mold (10) having a plurality of curved surfaces (12) and a second master mold (20) having a plurality of projections (22) to form a substrate (32) having a plurality of lenses (34) formed by the curved surfaces (12) and recesses (36) formed by the projections (22); removing the first and second master molds (10, 20) from the substrate (32); and filling the recesses (36) with a shading material (42) after the second master mold (20) is removed.
    Type: Grant
    Filed: April 4, 2003
    Date of Patent: June 21, 2005
    Assignee: Seiko Epson Corporation
    Inventor: Takao Nishikawa